NTK3043N Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723 Features • • • • • • • Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment Low Threshold Levels, VGS(TH) < 1.3 V Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) TYP ID Max 1.5 W @ 4.5 V 2.4 W @ 2.5 V 20 V 285 mA 5.1 W @ 1.8 V 6.8 W @ 1.65 V Top View Applications 3 • Interfacing, Switching • High Speed Switching • Cellular Phones, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±10 V Steady State tv5s Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C Power Dissipation (Note 2) Pulsed Drain Current mA MARKING DIAGRAM 440 TA = 25°C PD mW 545 TA = 25°C Steady State 185 285 tv5s Continuous Drain Current (Note 2) ID TA = 85°C TA = 25°C tp = 10 ms 210 PD 310 IDM 400 mA −55 to 150 °C 286 mA 260 °C Source Current (Body Diode) (Note 2) IS Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds) TL SOT−723 CASE 631AA 1 mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2006 KA mA 155 Operating Junction and Storage Temperature TJ, TSTG April, 2006 − Rev. 3 1 − Gate 2 − Source 3 − Drain 255 ID 2 M Continuous Drain Current (Note 1) 1 1 KA M = Device Code = Date Code ORDERING INFORMATION Device Package Shipping † NTK3043NT1G SOT−723* 4000 / Tape & Reel NTK3043NT5G SOT−723* 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb−Free. Publication Order Number: NTK3043N/D NTK3043N THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 280 Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 Unit °C/W 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Condition Symbol Min 20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 100 mA V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient ID = 100 mA, Reference to 25°C V(BR)DSS/TJ Zero Gate Voltage Drain Current VGS = 0 V, VDS = 16 V TJ = 25°C IDSS mV/°C 1 TJ = 125°C VDS = 0 V, VGS = ±5 V Gate−to−Source Leakage Current V 27 10 IGSS mA 1 mA 1.3 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS = VDS, ID = 250 mA Gate Threshold Temperature Coefficient Drain−to−Source On Resistance 0.4 VGS(TH)/TJ −2.4 RDS(ON) 1.5 3.4 VGS = 4.5V, ID = 255 mA 1.6 3.8 VGS = 2.5 V, ID = 1 mA 2.4 4.5 VGS = 1.8 V, ID = 1 mA 5.1 10 VGS = 1.65 V, ID = 1 mA 6.8 15 VGS = 4.5V, ID = 10 mA Forward Transconductance VGS(TH) VDS = 5 V, ID = 100 mA gFS mV/°C 0.275 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 11 Output Capacitance COSS 8.3 CRSS 2.7 td(ON) 13 tr 15 td(OFF) 94 tf 55 VSD 0.83 VGS = 0 V, f = 1 MHz, VDS = 10 V Reverse Transfer Capacitance pF SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 W Fall Time ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage TJ = 25°C VGS = 0 V, IS= 286 mA TJ = 125°C Reverse Recovery Time Charge Time Discharge Time VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms, IS = 286 mA Reverse Recovery Charge 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 0.69 tRR 9.1 ta 7.1 tb 2.0 QRR 3.7 1.2 V ns nC NTK3043N TYPICAL PERFORMANCE CURVES 0.3 VDS ≥ 5 V 2.5 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 0.3 VGS = 3 V to 10 V TJ = 25°C 0.2 2.2 V 2.0 V 0.1 1.8 V 1.6 V 1.4 V 0 0 1 2 3 4 0.2 0.1 TJ = 125°C TJ = 25°C TJ = −55°C 0 5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 5 ID = 0.255 A TJ = 25°C 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 6 TJ = 25°C 5 4 VGS = 2.5 V 3 2 VGS = 4.5 V 1 0 0.2 0.3 Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 9.0 1000 VGS = 0 V 8.0 VGS = 1.65 V, ID = 1 mA 7.0 6.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE 0.1 ID, DRAIN CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VGS = 1.8 V, ID = 10 mA 5.0 4.0 VGS = 2.5 V, ID = 10 mA 3.0 2.0 100 TJ = 150°C TJ = 125°C 10 VGS = 4.5 V, ID = 10 mA 1.0 0 −50 1.5 2 2.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1 −25 0 25 50 75 100 125 150 5 10 15 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTK3043N TYPICAL PERFORMANCE CURVES 25 1000 TJ = 25°C VDD = 5 V ID = 10 mA VGS = 4.5 V Crss t, TIME (ns) 20 15 Ciss 10 Coss td(off) tf 100 tr td(on) 10 5 0 10 VDS = 0 V 5 VGS = 0 V 0 VGS Crss 5 10 15 20 1 1 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 10 RG, GATE RESISTANCE (OHMS) Figure 8. Resistive Switching Time Variation vs. Gate Resistance 0.4 IS, SOURCE CURRENT (AMPS) C, CAPACITANCE (pF) Ciss VGS = 0 V TJ = 25°C 0.3 0.2 0.1 TJ = 150°C TJ = 125°C 0 0.4 TJ = −55°C 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 1.0 100 NTK3043N PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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