NTZD3152P D

NTZD3152P
Small Signal MOSFET
−20 V, −430 mA, Dual P−Channel
with ESD Protection, SOT−563
Features
•
•
•
•
•
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
ID Max
0.5 W @ −4.5 V
0.6 W @ −2.5 V
−20 V
−430 mA
1.0 W @ −1.8 V
D2
D1
Applications
•
•
•
•
RDS(on) Typ
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
G2
G1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6.0
V
−430
mA
Continuous Drain Current
(Note 1)
Steady
State
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Steady State
Continuous Drain Current
(Note 1)
tv5s
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
ID
PD
ID
tv5s
PD
tp = 10 ms
−310
250
mW
−455
mA
mW
IDM
−750
mA
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−350
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
MARKING DIAGRAM
6
1
SOT−563−6
CASE 463A
PINOUT: SOT−563
S1 1
6 D1
G1 2
5 G2
3
4 S2
D2
Top View
Symbol
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
RqJA
Max
Unit
500
°C/W
447
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 6
1
TU M G
G
TU
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Parameter
S2
−328
280
Pulsed Drain Current
P−Channel
MOSFET
S1
1
ORDERING INFORMATION
Device
Package
Shipping†
NTZD3152PT1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
SOT−563
(Pb−Free)
8000 / Tape & Reel
NTZD3152PT1H
NTZD3152PT5H
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTZD3152P/D
NTZD3152P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
18
IDSS
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−2.0
IGSS
VDS = 0 V, VGS = "4.5 V
"2.0
VGS(TH)
VGS = VDS, ID = −250 mA
mA
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
−0.45
−1.0
−1.9
V
mV/°C
VGS = −4.5 V, ID = −430 mA
0.5
0.9
VGS = −2.5 V, ID = −300 mA
0.6
1.2
VGS = −1.8 V, ID = −150 mA
1.0
2.0
VDS = −10 V, ID = −430 mA
1.0
W
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = −16 V
105
175
15
30
CRSS
10
20
Total Gate Charge
QG(TOT)
1.7
2.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.4
td(on)
10
tr
12
VGS = −4.5 V, VDS = −10 V,
ID = −215 mA
pF
nC
0.1
0.3
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
td(off)
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −215 mA, RG = 10 W
tf
ns
35
19
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = 0 V,
IS = −350 mA
TJ = 25°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −350 mA
−0.8
13
−1.2
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTZD3152P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1
TJ = 25°C
VGS = −2 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
1
−1.6 V
0.8
VGS = −1.8 V
0.6
−1.4 V
0.4
−1.2 V
0.2
−1 V
0
VDS ≥ −10 V
0.8
0.6
0.4
TJ = −55°C
0.2
25°C
100°C
0
0
1
2
3
4
5
6
7
8
9
10
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
0.5
1.5
2
2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.8
ID = −0.43 A
TJ = 25°C
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
3
5
2
4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
6
1.4
1.2
VGS = −1.8 V
1.1
1.0
0.9
0.8
0.7
VGS = −2.5 V
0.6
0.5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10000
1.6
ID = −0.43 A
VGS = −4.5 V
VGS = 0 V
1.4
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
1.3
1.2
1
TJ = 150°C
1000
TJ = 100°C
100
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTZD3152P
250
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
200
CISS
150
100
COSS
50
CRSS
0
0
5
10
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
5
QT
4
8
−VGS
−VDS
7
6
3
5
4
2
QGS
QGD
3
1
2
ID = −0.215 A
TJ = 25°C
1
0
0
0.2
0
Figure 7. Capacitance Variation
1.2 1.4 1.6
0.4 0.6 0.8
1
QG, TOTAL GATE CHARGE (nC)
1.8
2
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
−IS, SOURCE CURRENT (AMPS)
0.6
td(off)
tf
tr
td(on)
10
VDD = −10 V
ID = −0.215 A
VGS = −4.5 V
1
10
VGS = 0 V
TJ = 25°C
0.4
0.2
0
0.3
1
100
0.4
0.5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
VGS ≤ 6 V
Single Pulse
TC = 25°C
10 ms
100 ms
0.1
0.01
0.001
0.1
0.7
0.8
0.9
Figure 10. Diode Forward Voltage vs. Current
10
1
0.6
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
t, TIME (ns)
9
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
dc
RDS(on) Limit
Thermal Limit
Package Limit
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Safe Operating Area
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4
100
NTZD3152P
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE G
D
−X−
5
6
1
2
A
L
4
E
−Y−
3
b
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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NTZD3152P/D