NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS(on) Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS ID Max 0.5 W @ −4.5 V 0.6 W @ −2.5 V −20 V −430 mA 1.0 W @ −1.8 V D2 D1 Applications • • • • RDS(on) Typ Load/Power Switches Power Supply Converter Circuits Battery Management Cell Phones, Digital Cameras, PDAs, Pagers, etc. G2 G1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6.0 V −430 mA Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C TA = 85°C Steady State Continuous Drain Current (Note 1) tv5s Power Dissipation (Note 1) TA = 25°C TA = 85°C ID PD ID tv5s PD tp = 10 ms −310 250 mW −455 mA mW IDM −750 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −350 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature MARKING DIAGRAM 6 1 SOT−563−6 CASE 463A PINOUT: SOT−563 S1 1 6 D1 G1 2 5 G2 3 4 S2 D2 Top View Symbol Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 5 s (Note 1) RqJA Max Unit 500 °C/W 447 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in. sq. [1 oz.] including traces). © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 6 1 TU M G G TU = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter S2 −328 280 Pulsed Drain Current P−Channel MOSFET S1 1 ORDERING INFORMATION Device Package Shipping† NTZD3152PT1G SOT−563 (Pb−Free) 4000 / Tape & Reel SOT−563 (Pb−Free) 8000 / Tape & Reel NTZD3152PT1H NTZD3152PT5H †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTZD3152P/D NTZD3152P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V 18 IDSS mV/°C TJ = 25°C −1.0 TJ = 125°C −2.0 IGSS VDS = 0 V, VGS = "4.5 V "2.0 VGS(TH) VGS = VDS, ID = −250 mA mA mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS −0.45 −1.0 −1.9 V mV/°C VGS = −4.5 V, ID = −430 mA 0.5 0.9 VGS = −2.5 V, ID = −300 mA 0.6 1.2 VGS = −1.8 V, ID = −150 mA 1.0 2.0 VDS = −10 V, ID = −430 mA 1.0 W S CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS VGS = 0 V, f = 1.0 MHz, VDS = −16 V 105 175 15 30 CRSS 10 20 Total Gate Charge QG(TOT) 1.7 2.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.4 td(on) 10 tr 12 VGS = −4.5 V, VDS = −10 V, ID = −215 mA pF nC 0.1 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time td(off) Fall Time VGS = −4.5 V, VDD = −10 V, ID = −215 mA, RG = 10 W tf ns 35 19 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS = −350 mA TJ = 25°C VGS = 0 V, dISD/dt = 100 A/ms, IS = −350 mA −0.8 13 −1.2 V ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTZD3152P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1 TJ = 25°C VGS = −2 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 1 −1.6 V 0.8 VGS = −1.8 V 0.6 −1.4 V 0.4 −1.2 V 0.2 −1 V 0 VDS ≥ −10 V 0.8 0.6 0.4 TJ = −55°C 0.2 25°C 100°C 0 0 1 2 3 4 5 6 7 8 9 10 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 0.5 1.5 2 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.8 ID = −0.43 A TJ = 25°C 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 3 5 2 4 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1 6 1.4 1.2 VGS = −1.8 V 1.1 1.0 0.9 0.8 0.7 VGS = −2.5 V 0.6 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 −ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 10000 1.6 ID = −0.43 A VGS = −4.5 V VGS = 0 V 1.4 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 1.3 1.2 1 TJ = 150°C 1000 TJ = 100°C 100 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTZD3152P 250 C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C 200 CISS 150 100 COSS 50 CRSS 0 0 5 10 15 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 5 QT 4 8 −VGS −VDS 7 6 3 5 4 2 QGS QGD 3 1 2 ID = −0.215 A TJ = 25°C 1 0 0 0.2 0 Figure 7. Capacitance Variation 1.2 1.4 1.6 0.4 0.6 0.8 1 QG, TOTAL GATE CHARGE (nC) 1.8 2 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 −IS, SOURCE CURRENT (AMPS) 0.6 td(off) tf tr td(on) 10 VDD = −10 V ID = −0.215 A VGS = −4.5 V 1 10 VGS = 0 V TJ = 25°C 0.4 0.2 0 0.3 1 100 0.4 0.5 Figure 9. Resistive Switching Time Variation vs. Gate Resistance VGS ≤ 6 V Single Pulse TC = 25°C 10 ms 100 ms 0.1 0.01 0.001 0.1 0.7 0.8 0.9 Figure 10. Diode Forward Voltage vs. Current 10 1 0.6 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) −ID, DRAIN CURRENT (A) t, TIME (ns) 9 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) dc RDS(on) Limit Thermal Limit Package Limit 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Safe Operating Area www.onsemi.com 4 100 NTZD3152P PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE G D −X− 5 6 1 2 A L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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