NTP8G202N D

NTP8G202N
Power GaN Cascode
Transistor 600 V, 290 mW
Features
•
•
•
•
Fast Switching
Extremely Low Qrr
Transphorm Inside
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) TYP
600 V
290 mW @ 10 V
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
NDD
Unit
Drain−to−Source Voltage
VDSS
600
V
Gate−to−Source Voltage
VGS
±18
V
ID
9.0
A
Continuous Drain
Current RqJC
Steady
State
Power Dissipation –
RqJC
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 ms
Pulsed Drain
Current
N−Channel MOSFET
D (3)
6.0
PD
65
W
G (1)
IDM
35
A
TJ,
TSTG
−55 to
+150
°C
TL
260
°C
S (2,4)
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Leads
MARKING DIAGRAM
& PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
4
Source
4
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
2.3
°C/W
Junction−to−Ambient Steady State
RqJA
62
°C/W
TO−220
CASE 221A−09
STYLE 10
1
2
1
Gate
3
A
Y
WW
G
NTP8G202NG
AYWW
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
Drain
2
Source
ORDERING INFORMATION
Device
NTP8G202NG
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 1
1
Package
Shipping
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NTP8G202N/D
NTP8G202N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
TJ = 25°C
2.5
90
mA
TJ = 150°C
8.0
±100
nA
2.1
2.6
V
290
350
mW
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
Drain−to−Source Leakage Current
IDSS
VGS = 0 V, ID = 1 mA
VDS = 600 V, VGS = 0 V
IGSS
VGS = ±18 V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 500 mA
Static Drain-to-Source On Resistance
RDS(on)
VGS = 8 V, ID = 5.5 A
Gate−to−Source Leakage Current
600
V
ON CHARACTERISTICS (Note 1)
1.6
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Effective output capacitance, energy
related (Note 3)
Co(er)
Effective output capacitance, time
related (Note 4)
Co(tr)
pF
760
VDS = 400 V, VGS = 0 V, f = 1 MHz
26
3.5
VGS = 0 V, VDS = 0 to 480 V
ID = constant, VGS = 0 V,
VDS = 0 to 480 V
36
57
Total Gate Charge
Qg
6.2
Gate-to-Source Charge
Qgs
Gate-to-Drain Charge
Qgd
2.2
td(on)
6.2
tr
4.5
VDS = 100 V, ID = 5.5 A, VGS = 4.5 V
9.3
nC
2.1
SWITCHING CHARACTERISTICS (Note 2)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(off)
VDD = 480 V, ID = 5.5 A,
VGS = 10 V, RG = 2 W
tf
ns
9.7
5.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
IS = 5.5 A, VGS = 0 V
TJ = 25°C
VGS = 0 V, VDD = 480 V
IS = 5.5 A, di/dt = 1500 A/ms
2.1
V
12
ns
29
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
3. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
4. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
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2
NTP8G202N
TYPICAL CHARACTERISTICS
40
20
TJ = 25°C
VGS = 8 V
TJ = 175°C
VGS = 8 V
35
4V
5V
15
30
IDS (A)
IDS (A)
20
10
3V
3.5 V
15
5
10
3V
5
1V
0
0
2
4
8
6
1V
0
10
0
2
4
8
6
10
VDS (V)
VDS (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
3.0
40
VDS = 10 V
TJ = 25°C
35
ID = 12 A,
VGS = 10 V
NORMALIZED RDS(on)
2.5
30
IDS (A)
3.5 V
4V
25
25
TJ = 175°C
20
15
10
2.0
1.5
1.0
0.5
5
0
0
4
2
6
8
0.0
10
0
25
50
75
100
125
150
175
VGS (V)
TJ (°C)
Figure 3. Typical Transfer Characteristics
Figure 4. Normalized On−Resistance
200
6
1000
CISS
5
4
EOSS (mJ)
C (pF)
100
COSS
3
2
10
CRSS
1
VGS = 0 V
f = 1 MHz
1
0
100
200
300
400
500
0
600
0
100
200
300
400
500
VDS (V)
VDS (V)
Figure 5. Typical Capacitance
Figure 6. Typical COSS Stored Eneergy
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3
600
NTP8G202N
TYPICAL CHARACTERISTICS
35
IS = f(VSD)
TC = 25°C
30
25°C
50°C
75°C
100°C
125°C
150°C
20
10
DC
IdS (A)
IS (A)
25
15
5 ms
1 ms
1
100 ms
10
10 ms
TJ = 175°C
5
0.1
0
0
1
2
3
4
5
6
7
8
0.1
1
10
1000
100
VSD (V)
VSD (V)
Figure 7. Forward Characteristics of Rev.
Diode
Figure 8. Safe Operating Area
2.5
TC = 80°C
2.0
Zth (°C/W)
IdS (A)
10
DC
5 ms
1 ms
1
1.5
D = 50%
1.0
100 ms
D = 20%
10 ms
0.5
0.1
0.1
1
10
100
D = 10%
Single Pulse
0
0.00001 0.0001 0.001
1000
0.01
0.1
1
VSD (V)
VSD (V)
Figure 9. Safe Operating Area
Figure 10. Transient Thermal Resistance
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4
10
NTP8G202N
VDS
SiC Diode
VGS
90%
10%
tr
td(on)
td(off)
ton
Figure 11. Switching Time Test Circuit
tf
toff
Figure 12. Switching Time Waveform
i, V
di F/dt
trr
IF
tF
tS
t
10% I RRM
QS
IRRM
QF
di rr /dt
90% I RRM
trr = t S + tF
Q rr = Q S + Q
Figure 13. Test Circuit for Reverse Diode
Characteristics
Figure 14. Diode Recovery Waveform
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5
V RRM
NTP8G202N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 10:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
SOURCE
DRAIN
SOURCE
ON Semiconductor and the
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NTP8G202N/D