NTP8G202N Power GaN Cascode Transistor 600 V, 290 mW Features • • • • Fast Switching Extremely Low Qrr Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) TYP 600 V 290 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±18 V ID 9.0 A Continuous Drain Current RqJC Steady State Power Dissipation – RqJC Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms Pulsed Drain Current N−Channel MOSFET D (3) 6.0 PD 65 W G (1) IDM 35 A TJ, TSTG −55 to +150 °C TL 260 °C S (2,4) Operating Junction and Storage Temperature Lead Temperature for Soldering Leads MARKING DIAGRAM & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 Source 4 THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.3 °C/W Junction−to−Ambient Steady State RqJA 62 °C/W TO−220 CASE 221A−09 STYLE 10 1 2 1 Gate 3 A Y WW G NTP8G202NG AYWW = Assembly Location = Year = Work Week = Pb−Free Package 3 Drain 2 Source ORDERING INFORMATION Device NTP8G202NG © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 1 1 Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NTP8G202N/D NTP8G202N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit TJ = 25°C 2.5 90 mA TJ = 150°C 8.0 ±100 nA 2.1 2.6 V 290 350 mW OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Leakage Current IDSS VGS = 0 V, ID = 1 mA VDS = 600 V, VGS = 0 V IGSS VGS = ±18 V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 500 mA Static Drain-to-Source On Resistance RDS(on) VGS = 8 V, ID = 5.5 A Gate−to−Source Leakage Current 600 V ON CHARACTERISTICS (Note 1) 1.6 DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective output capacitance, energy related (Note 3) Co(er) Effective output capacitance, time related (Note 4) Co(tr) pF 760 VDS = 400 V, VGS = 0 V, f = 1 MHz 26 3.5 VGS = 0 V, VDS = 0 to 480 V ID = constant, VGS = 0 V, VDS = 0 to 480 V 36 57 Total Gate Charge Qg 6.2 Gate-to-Source Charge Qgs Gate-to-Drain Charge Qgd 2.2 td(on) 6.2 tr 4.5 VDS = 100 V, ID = 5.5 A, VGS = 4.5 V 9.3 nC 2.1 SWITCHING CHARACTERISTICS (Note 2) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(off) VDD = 480 V, ID = 5.5 A, VGS = 10 V, RG = 2 W tf ns 9.7 5.0 SOURCE−DRAIN DIODE CHARACTERISTICS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IS = 5.5 A, VGS = 0 V TJ = 25°C VGS = 0 V, VDD = 480 V IS = 5.5 A, di/dt = 1500 A/ms 2.1 V 12 ns 29 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. 3. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 4. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS www.onsemi.com 2 NTP8G202N TYPICAL CHARACTERISTICS 40 20 TJ = 25°C VGS = 8 V TJ = 175°C VGS = 8 V 35 4V 5V 15 30 IDS (A) IDS (A) 20 10 3V 3.5 V 15 5 10 3V 5 1V 0 0 2 4 8 6 1V 0 10 0 2 4 8 6 10 VDS (V) VDS (V) Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 3.0 40 VDS = 10 V TJ = 25°C 35 ID = 12 A, VGS = 10 V NORMALIZED RDS(on) 2.5 30 IDS (A) 3.5 V 4V 25 25 TJ = 175°C 20 15 10 2.0 1.5 1.0 0.5 5 0 0 4 2 6 8 0.0 10 0 25 50 75 100 125 150 175 VGS (V) TJ (°C) Figure 3. Typical Transfer Characteristics Figure 4. Normalized On−Resistance 200 6 1000 CISS 5 4 EOSS (mJ) C (pF) 100 COSS 3 2 10 CRSS 1 VGS = 0 V f = 1 MHz 1 0 100 200 300 400 500 0 600 0 100 200 300 400 500 VDS (V) VDS (V) Figure 5. Typical Capacitance Figure 6. Typical COSS Stored Eneergy www.onsemi.com 3 600 NTP8G202N TYPICAL CHARACTERISTICS 35 IS = f(VSD) TC = 25°C 30 25°C 50°C 75°C 100°C 125°C 150°C 20 10 DC IdS (A) IS (A) 25 15 5 ms 1 ms 1 100 ms 10 10 ms TJ = 175°C 5 0.1 0 0 1 2 3 4 5 6 7 8 0.1 1 10 1000 100 VSD (V) VSD (V) Figure 7. Forward Characteristics of Rev. Diode Figure 8. Safe Operating Area 2.5 TC = 80°C 2.0 Zth (°C/W) IdS (A) 10 DC 5 ms 1 ms 1 1.5 D = 50% 1.0 100 ms D = 20% 10 ms 0.5 0.1 0.1 1 10 100 D = 10% Single Pulse 0 0.00001 0.0001 0.001 1000 0.01 0.1 1 VSD (V) VSD (V) Figure 9. Safe Operating Area Figure 10. Transient Thermal Resistance www.onsemi.com 4 10 NTP8G202N VDS SiC Diode VGS 90% 10% tr td(on) td(off) ton Figure 11. Switching Time Test Circuit tf toff Figure 12. Switching Time Waveform i, V di F/dt trr IF tF tS t 10% I RRM QS IRRM QF di rr /dt 90% I RRM trr = t S + tF Q rr = Q S + Q Figure 13. Test Circuit for Reverse Diode Characteristics Figure 14. Diode Recovery Waveform www.onsemi.com 5 V RRM NTP8G202N PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 10: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE SOURCE DRAIN SOURCE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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