NTP5864N D

NTP5864N
Power MOSFET
60 V, 63 A, 12.4 mW
Features
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
(Note 1)
60 V
12.4 mΩ @ 10 V
63 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage −
Non−Repetitive (tp = 10 s)
VGS
±30
V
ID
63
A
Continuous Drain
Current − RJC (Note 1)
Power Dissipation −
RJC (Note 1)
Steady
State
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
107
G
IDM
252
A
TJ,
TSTG
−55 to
175
°C
IS
63
A
EAS
80
mJ
IAS
40
A
TL
260
°C
S
W
54
MARKING DIAGRAM
& PIN ASSIGNMENT
THERMAL RESISTANCE RATINGS
Symbol
Max
Units
Junction−to−Case (Drain) − Steady State
(Note 1)
RθJC
1.4
°C/W
Junction−to−Ambient − Steady State (Note 1)
RθJA
33
°C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
TO−220AB
CASE 221A
STYLE 5
1
2
3
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
Source
2
Drain
ORDERING INFORMATION
NTP5864NG
January, 2015 − Rev. 1
NTP5864NG
AYWW
1
Gate
Device
© Semiconductor Components Industries, LLC, 2015
4
Drain
4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
D
45
PD
TC = 100°C
tp = 10 s
N−Channel
1
Package
Shipping
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NTP5864N/D
NTP5864N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
58
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 A
mV/°C
1.0
A
±100
nA
4.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
2.0
−10
mV/°C
RDS(on)
VGS = 10 V, ID = 20 A
10.2
12.4
gFS
VDS = 15 V, ID = 20 A
10
S
1680
pF
m
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
124
Total Gate Charge
QG(TOT)
31
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
10
Rg
0.5
10
ns
Gate Resistance
VGS = 10 V, VDS = 48 V,
ID = 20 A
189
nC
2.0
7.3
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS = 10 V, VDD = 48 V,
ID = 20 A, RG = 2.5 tf
6.4
18
4.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.94
TJ = 125°C
0.84
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
24
VGS = 0 V, dISD/dt = 100 A/s,
IS = 20 A
QRR
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2
V
ns
16
7.9
20
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTP5864N
TYPICAL CHARACTERISTICS
125
125
7.5 V
VDS ≥ 10 V
TJ = 25°C
7V
100
6.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 10 V
5.5 V
75
5.0 V
50
4.5 V
25
100
75
50
TJ = 25°C
25
TJ = 125°C
0
1
2
3
4
2
5
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
ID = 20 A
TJ = 25°C
0.025
0.020
0.015
0.010
0.005
0.000
4
5
6
7
8
9
10
7
0.0115
VGS = 10 V
TJ = 25°C
0.0110
0.0105
0.0100
0.0095
10
15
20
VGS, GATE−TO−SOURCE VOLTAGE (V)
25
30
35
40
45
50
55
60
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100000
2.2
2.0
4
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
ID = 20 A
VGS = 10 V
VGS = 0 V
1.8
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
0
1.6
1.4
1.2
1.0
10000
TJ = 150°C
TJ = 125°C
1000
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTP5864N
TYPICAL CHARACTERISTICS
10
2500
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
2000
Ciss
1500
1000
500
Coss
0
0
Crss
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
QT
8
6
Qgs
4
2
ID = 20 A
TJ = 25°C
0
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
VDD = 48 V
ID = 20 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
td(on)
10
VGS = 0 V
TJ = 25°C
90
100
t, TIME (ns)
Qgd
tr
tf
80
70
60
50
40
30
20
10
0
0.40
1
1
10
100
0.60
0.70
0.80
0.90
1.00
1.10 1.20
RG, GATE RESISTANCE ()
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
80
100 s
1 ms
10 ms
dc
100
10 s
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
ID = 40 A
70
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.50
10
100
60
50
40
30
20
10
0
25
50
75
100
125
150
175
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP5864N
TYPICAL CHARACTERISTICS
RJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.1
1
10
NTP5864N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor and the
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6
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NTP5864N/D