DG3000 Vishay Siliconix Low-Voltage Single SPDT MICRO FOOTtAnalog Switch FEATURES BENEFITS APPLICATIONS D MICRO FOOT Chip Scale Package (1.07 x 1.57 mm) D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rDS(on): 1.4 W D Fast Switching - tON : 24 ns, tOFF: 9 ns D Low Power Consumption D TTL/CMOS Compatible D D D D D D D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems PCM Cards PDA DESCRIPTION The DG3000 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 24 ns, tOFF: 9 ns), low on-resistance (rDS(on): 1.4 W) and small physical size (MICRO FOOT, 6-bump), the DG3000 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG3000 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG3000. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION MICRO FOOT (6-Bump) TRUTH TABLE IN B1 A1 NO (Source1) V+ B2 A2 COM GND B3 A3 Logic NC NO 0 ON OFF 1 OFF ON NC (Source2) ORDERING INFORMATION Top View A1 Locator XXX 3000 Temp Range Package Part Number -40 to 85°C MICRO FOOT: 6-Bump (2 x 3, 0.5-mm Pitch) DG3000DB Device Marking: 3000 xxx = Date/Lot Traceability Code Document Number: 71742 S-21483—Rev. C, 26-Aug-02 www.vishay.com 1 DG3000 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Reflow Conditionsb VPR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215°C IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C Power Dissipation (Packages)c 6-Bump, 2 x 3 MICRO FOOTd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020A). No hand/manual solder rework recommended c All bumps soldered to PC Board. d Derate 6.5 mW/_C above 25_C SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve Limits -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd Switch Off Leakage Currentf VNO, VNC, VCOM rON V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA Room Fulld 17 rON Flatness V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room 14 INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) 20 22.5 W V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Room Fulld -700 -1 1 700 11 pA nA Room Fulld -700 -1 1 700 11 pA nA Room Fulld -700 -1 1 700 11 pA nA 1.6 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Cin Full Currentd IINL or IINH Input VIN = 0 or V+ Full 0.4 5 -1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 1.5 V, RL = 300 W, W CL = 35 pF Figures 1 and 2 CNO(off), CNC(off) Room Fulld 61 76 79 Room Fulld 17 33 36 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz 1 45 Room 2 Room -61 Room -67 Room 31 Room 98 pC dB VIN = 0 or V+, f = 1 MHz CON ns pF Power Supply Power Supply Range V+ Power Supply Currentd I+ Power Consumption PC www.vishay.com 2 1.8 0.1 VIN = 0 or V+ 2.2 V 1.0 mA 2.2 mW Document Number: 71742 S-21483—Rev. C, 26-Aug-02 DG3000 Vishay Siliconix SPECIFICATIONS (V+ = 3.0 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistanced rON Flatnessd Switch Off Leakage Current f VNO, VNC, VCOM rON V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room Full 3.3 3.4 rON Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room 1.3 INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V 4.1 4.2 W Room Full -800 -13 800 13 pA nA Room Full -800 -13 800 13 pA nA Room Full -800 -13 800 13 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Input Currentd Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 5 -1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 2.0 V, RL = 300 W, W CL = 35 pF Figure 1 and 2 CNO(off), CNC(off) Room Full 34 49 52 Room Full 12 30 33 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz 1 23 Room 4 Room -61 Room -67 Room 31 Room 47 pC dB VIN = 0 or V+, f = 1 MHz CON ns pF Power Supply Power Supply Range V+ Power Supply Currentd I+ Power Consumption PC Document Number: 71742 S-21483—Rev. C, 26-Aug-02 2.7 0.1 VIN = 0 or V+ 3.3 V 1.0 mA 3.3 mW www.vishay.com 3 DG3000 Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full 1.4 1.6 rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 0.5 INO(off), INC(off) Switch Off Leakage Current ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, V+ = 5.5 V VNO, VNC = VCOM = 1 V/4.5 V 2.3 2.8 Room Full -1.2 -21 1.2 21 Room Full -1.2 -21 1.2 21 Room Full -1.2 -21 1.2 21 2.4 W nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.8 VIN = 0 or V+ Full 5 -1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced VNO or VNC = 3 V, RL = 300 W, W CL = 35 pF Figure 1 and 2 CNO(off), CNC(off) Room Full 24 36 39 Room Full 9 22 25 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz 1 15 Room 38 Room -61 Room -67 Room 30 Room 96 pC dB VIN = 0 or V+, f = 1 MHz CON ns pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC 4.5 0.1 VIN = 0 or V+ 5.5 V 1.0 mA 5.5 mW Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com 4 Document Number: 71742 S-21483—Rev. C, 26-Aug-02 DG3000 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage 20 r ON - On-Resistance ( W ) 16 V+ = 1.8 V 12 8 V+ = 2 V 4 V+ = 3 V V+ = 5 V 0 0 1 2 3 4 5 VCOM - Analog Voltage (V) rON vs. Analog Voltage and Temperature rON vs. Analog Voltage and Temperature 14 5 V+ = 3 V r ON - On-Resistance ( W ) r ON - On-Resistance ( W ) 12 10 8 V+ = 2 V 6 85_C 25_C -40 _C 4 V+ = 5 V 85_C 25_C -40 _C 2 1 2 3 4 25_C 85_C 3 -40 _C 2 1 0 0 4 0 0.0 5 0.5 1.0 VCOM - Analog Voltage (V) 2.0 2.5 3.0 VCOM - Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10 m 10 V+ = 5 V VIN = 0 V 1m I+ - Supply Current (A) I+ - Supply Current (nA) 1.5 1 0.1 100 m 10 m 1m 100 n 0.01 -60 10 n -40 -20 0 20 40 Temperature (_C) Document Number: 71742 S-21483—Rev. C, 26-Aug-02 60 80 100 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) www.vishay.com 5 DG3000 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Leakage Current vs. Temperature Leakage vs. Analog Voltage 200 10000 V+ = 5.5 V V+ = 5 V T = 25_C 0 Leakage Current (pA) Leakage Current (pA) 1000 INO(off)/INC(off) 100 ICOM(off) ICOM(on) 10 -200 -400 INO(off)/INC(off) ICOM(on) -600 -800 ICOM(off) -1000 -1200 1 -60 -40 -20 0 20 40 60 80 0 100 1 Switching Time vs. Temperature and Supply Voltage 10 Loss, OIRR, XTALK (dB) 50 40 tON V+ = 3 V 30 tON V+ = 5 V 20 tOFF V+ = 2 V tOFF V+ = 3 V tOFF V+ = 5 V 10 0 -60 4 5 LOSS 0 tON V+ = 2 V 60 3 Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 70 t ON, t OFF - Switching Time (ns) 2 VCOM, VNO, VNC - Analog Voltage Temperature (_C) -10 -20 -30 -40 -50 OIRR -60 V+ = 3 V RL = 50 W -70 XTALK -80 -90 -40 -20 0 20 40 60 80 100 100 K 1M 10 M 100 M 1G Frequency (Hz) Temperature (_C) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage 2.0 40 20 1.6 Q - Charge Injection (pC) V T - Switching Threshold (V) 1.8 1.4 1.2 1.0 0.8 0.6 0.4 0 V+ = 3 V V+ = 2 V -20 -40 V+ = 5 V -60 0.2 0.0 -80 0 1 2 3 4 V+ - Supply Voltage (V) www.vishay.com 6 5 6 0 1 2 3 4 5 VCOM - Analog Voltage (v) Document Number: 71742 S-21483—Rev. C, 26-Aug-02 DG3000 Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input VINL V+ Switch Input Switch Output COM NO or NC tr t 5 ns tf t 5 ns 50% VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 W GND CL 35 pF 0V tOFF tON Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT + V COM ǒ RL R L ) R ON Ǔ FIGURE 1. Switching Time V+ Logic Input V+ tr <5 ns tf <5 ns VINL COM NO VNO VINH VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ DVOUT V+ Rgen COM NC or NO VOUT VOUT + Vgen IN CL = 1 nF IN On Off On GND Q = DVOUT x CL VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection Document Number: 71742 S-21483—Rev. C, 26-Aug-02 www.vishay.com 7 DG3000 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ NC or NO 0V, 2.4 V IN COM RL V COM Off Isolation + 20 log V NOńNC GND Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance www.vishay.com 8 Document Number: 71742 S-21483—Rev. C, 26-Aug-02 DG3000 Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6−BUMP (2 X 3, 0.5−mm PITCH) 6 O 0.150 X 0.180 Note 2 Solder Mask O X 0.280 0.5 Silicon 0.5 A2 A A1 Recommended Land Pattern Bump Note 1 Index-Bump A1 Note 3 3 2 1 b Diameter A XXX 3000 E e B S S Top Side (Die Back) e D NOTES (Unless Otherwise Specified): 1. Bump is Eutectic 63/57 Sn/Pb. 2. Non-solder mask defined copper landing pad. 3. Laser Mark on silicon die back; no coating. Shown is not actual marking; sample only. MILLIMETERS* INCHES Dim Min Max Min Max A 0.615 0.715 0.0242 0.0281 A1 0.140 0.190 0.0055 0.0075 A2 0.475 0.525 0.0187 0.0207 b 0.180 0.250 0.0071 0.0098 D 1.555 1.585 0.0612 0.0624 E 1.055 1.085 0.0415 0.0427 e S 0.5 BASIC 0.278 0.0197 BASIC 0.293 0.0109 0.0115 * Use millimeters as the primary measurement. Document Number: 71742 S-21483—Rev. C, 26-Aug-02 www.vishay.com 9