DG2001 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rON: 3 W Fast Switching - tON : 20 ns, tOFF: 10 ns Low Leakage - ICOM: 0.2-nA Low Charge Injection - QINJ: 5 pC Low Power Consumption TTL/CMOS Compatible ESD Protection > 2000 V (Method 3015.7) TSOP-6 Package Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits DESCRIPTION The DG2001 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the DG2001 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2001 is built on Vishay Siliconix’s low voltage JI2 process. The DG2001 has a minimum 2000-V, ESD protection, per Method 3015.7. An epitaxial layer prevents latchup. Break-before-make is guaranteed. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE Logic TSOP-6 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Document Number: 71398 S-03281—Rev. B, 19-Mar-01 NC NO 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C TSOP-6 DG2001DV www.vishay.com 1 DG2001 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) ESD (MIL-STD-883B, Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C Power Dissipation (Packages)b TSOP-6c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7.0 mW/_C above 25_C SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC, VCOM On-Resistance rON V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA Room Full 15 17 rON Flatnessd rON Flatness V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room 5 Switch Off Leakage Currentg INO(off), INC(off) ICOM(off) Channel-On Leakage Current g ICOM(on) V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V 30 32 W Room Full –300 –3.5 300 3.5 pA nA Room Full –300 –3.5 300 3.5 pA nA Room Full –350 –3.5 300 3.5 pA nA 1.6 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitancend Channel-On Capacitanced VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF CNO(off), CNC(off) Room Full 30 50 53 Room Full 15 30 33 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz 1 15 Room 1 Room –71 Room –70 Room 17 Room 50 dB VIN = 0 or V+, f = 1 MHz CON pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC www.vishay.com 2 1.8 0.01 VIN = 0 or V+ 2.20 V 1.0 mA 2.2 mW Document Number: 71398 S-03281—Rev. B, 19-Mar-01 DG2001 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC, VCOM On-Resistance rON V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room Full 5 6 rON Flatnessd rON Flatness V+ = 2.7 V VCOM = 0 to V+, INO, INC = 10 mA Room 3 Switch Off Leakage Current g INO(off), INC(off) ICOM(off) Channel-On Leakage Current g ICOM(on) V+ = 3.3 V, VNO, VNC = 1 V/3 V VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V 9.2 10.2 W Room Full –400 –4.5 400 4.5 pA nA Room Full –400 –4.5 400 4.5 pA nA Room Full –450 –4.5 450 4.5 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF CNO(off), CNC(off) Room Full 24 45 48 Room Full 12 30 33 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz 1 13 Room 3 Room –71 Room –70 Room 17 Room 50 dB VIN = 0 or V+, f = 1 MHz CON pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC Document Number: 71398 S-03281—Rev. B, 19-Mar-01 2.7 0.01 VIN = 0 or V+ 3.3 V 1.0 mA 3.3 mW www.vishay.com 3 DG2001 New Product Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC, VCOM On-Resistance rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full 3 4 rON Flatnessd rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 2 Switch Off Leakage Current g INO(off), INC(off) ICOM(off) Channel-On Leakage Current g ICOM(on) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V 7.0 8.0 W Room Full –900 –5.5 900 5.5 pA nA Room Full –900 –5.5 900 5.5 pA Room Full –1000 –5.5 1000 5.5 pA nA 2.4 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.8 VIN = 0 or V+ Full 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced VNO or VNC = 3 V, RL = 300 W, CL = 35 pF CNO(off), CNC(off) Room Full 20 37 40 Room Full 10 27 30 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W W, CL = 5 pF, f = 1 MHz 1 10 Room 7 Room –71 Room –70 Room 17 Room 50 dB VIN = 0 or V+, f = 1 MHz CON pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC 4.5 0.01 VIN = 0 or V+ 5.5 V 1.0 mA 5.5 mW Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com 4 Document Number: 71398 S-03281—Rev. B, 19-Mar-01 DG2001 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 13 9 11 6 rON – On-Resistance ( Ω ) 7 rON – On-Resistance ( Ω ) V+ = 2 V 12 V+ = 2 V 8 V+ = 3 V 5 V+ = 5 V 4 3 2 10 9 8 85_C 25_C –40_C 7 6 V+ = 5 V 5 1 4 0 3 25_C 85_C –40_C 40_C 0 1 2 3 4 0 5 1 2 VCOM – Analog Voltage (V) 3 4 5 VCOM – Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10 10 mA 1 mA 1 I+ – Supply Current (A) I+ – Supply Current (nA) V+ = 5 V VIN = 0 V 0.1 0.01 100 mA 10 mA 1 mA 0.1 mA 0.001 –60 –40 –20 0 20 40 60 80 1 100 10 100 Temperature (_C) 10 k 100 k 1M 10 M Input Switching Frequency (Hz) Leakage Current vs. Temperature Leakage vs. Analog Voltage 200 10000 V+ = 5 V V+ = 5.5 V 100 Leakage Current (pA) 1000 Leakage Current (pA) 1k ICOM(off) 100 ICOM(on) ION(off)/INC(off) 10 0 –100 ICOM(off) –200 ICOM(on) –300 ION(off)/INC(off) –400 1 –500 –60 –40 –20 0 20 40 Temperature (_C) Document Number: 71398 S-03281—Rev. B, 19-Mar-01 60 80 100 0 1 2 3 4 5 VCOM, VNO, VNC, – Analog Voltage (V) www.vishay.com 5 DG2001 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Switching Time vs. Temperature and Supply Voltage 35 10 LOSS –10 25 LOSS, OIRR, XTLAK (dB) tON, tOFF, – Switchint Time (ns) 0 tON V+ = 2 V 30 tON V+ = 3 V 20 tON V+ = 5 V 15 tOFF V+ = 2 V tOFF V+ = 3 V 10 5 tOFF V+ = 5 V 0 –60 –20 –30 –40 XTALK –50 OIRR –60 –70 V+ = 3 V RL = 50 W –80 –90 –40 –20 0 20 40 60 80 100 100 K 1M 10 M Temperature (_C) ËËËËËËË ËËËËËËË ËËËËËËË ËËËËËËË ËËËËËËË ËËËËËËË Switching Threshold vs. Supply Voltage 1.6 Charge Injection vs. Analog Voltage 30 Upper Threshold 1.2 1.0 Low Threshold 0.8 0.6 0.4 0.2 20 V+ = 5 V 10 V+ = 3 V 0 V+ = 2 V –10 –20 –30 0.0 –40 0 1 2 3 4 5 V+ – Supply Voltage (V) www.vishay.com 6 1G 40 Q – Charge Injection (pC) VT – Switchint Threshold (V) 1.4 100 M Frequency (Hz) 6 7 0 1 2 3 4 5 6 VCOM – Analog Voltage (V) Document Number: 71398 S-03281—Rev. B, 19-Mar-01 DG2001 New Product Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input 50% V+ NO or NC Switch Input tr t 20 ns tf t 20 ns 0V Switch Output COM VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 W GND CL 35 pF 0V tON tOFF 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ RL Ǔ R L ) R ON FIGURE 1. Switching Time V+ Logic Input V+ tr <5 ns tf <5 ns 0V COM NO VNO 3V VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen DVOUT V+ NC or NO COM VOUT VOUT + IN IN Vgen CL 3V On Off On GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection Document Number: 71398 S-03281—Rev. B, 19-Mar-01 www.vishay.com 7 DG2001 New Product Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0V, 2.4 V IN COM NC or NO Off Isolation + 20 log RL GND VNCńNO VCOM Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance www.vishay.com 8 Document Number: 71398 S-03281—Rev. B, 19-Mar-01