MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™CFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighterand cooler. ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Features Power Source Pin 3,4 •Reducedboardspaceconsumption •Increasedpowerdensity •Shortcommutationloop •Smoothswitchingwaveform •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Easytouse/drive •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC (J-STD20andJESD22) •Pb-freeplating,Halogenfreemoldcompound Applications 650VCoolMOS™CFD2isespeciallysuitableforresonantswitching stagesfore.g.PCSilverbox,LCDTV,Lighting,ServerandTelecom. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.21 Ω Qg,typ 68 nC ID,pulse 53 A Eoss @ 400V 5.7 µJ Body diode di/dt 900 A/µs Qrr 0.5 µC trr 120 ns Irrm 7.5 A Type/OrderingCode Package Marking IPL65R210CFD PG-VSON-4 65F6210 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Values Min. Typ. Max. 16.6 Unit Note/TestCondition A TC=25°C TC=100°C 10.5 Pulsed drain current ID‚pulse 53 A TC=25°C Avalanche energy, single pulse EAS 484 mJ ID=3.3A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.70 mJ ID=3.3A,VDD=50V Avalanche current, repetitive IAR 3.3 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 -40 150 °C 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 16.6 A TC=25°C Diode pulse current IS‚pulse 53 A TC=25°C Reverse diode dv/dt dv/dt 50 V/ns Maximum diode commutation speed dif/dt 900 Power dissipation Ptot 151 3) VDS=0...400V,ISD≤ID, Tj=25°C A/µs (see table 8) W TC=25°C 1) Limited by Tj max. Pulse width tp limited by Tj max 3) Vpeak<V(BR)DSS, Tj<Tj max, identical low side and high side switch with same Rg 2) Final Data Sheet 4 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 3Thermalcharacteristics Table3ThermalcharacteristicsThinPAK8x8 Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Thermal resistance, junction - ambient1) RthJA Typ. Max. Unit 0.83 °C/W 62 °C/W Tsold 260 SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 45 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition °C reflow MSL 3 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage V(BR)DSS 650 Gate threshold voltage VGS(th) 3.5 Zero gate voltage drain current IDSS Min. Typ. 4 Unit Note/TestCondition V VGS=0V,ID=1mA 4.5 V VDS=VGS,ID=0.7mA 1 µA VDS=650V,VGS=0V,Tj=25°C Max. VDS=650V,VGS=0V,Tj=150°C 200 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 0.189 100 nA VGS=20V,VDS=0V 0.21 Ω VGS=10V,ID=7.3A,Tj=25°C VGS=10V,ID=7.3A,Tj=150°C 0.491 Gate resistance RG 1 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 1850 pF Output capacitance Coss 86 pF Effective output capacitance, energy related1) Co(er) 70 pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) 336 pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) 12 ns Rise time tr 8.4 ns Turn-off delay time td(off) 53.2 ns Fall time tf 6.4 ns Min. Typ. Max. VDD=400V,VGS=13V,ID=11.0A, RG=3.4Ω (see table 9) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 12 nC VDD=480V,ID=11A,VGS=0to10V Qgd 37 nC Gate charge total Qg 68 nC Gate plateau voltage Vplateau 6.4 V 1) 2) Min. Typ. Max. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V Final Data Sheet 6 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=11.0A,Tj=25°C trr 120 ns Reverse recovery charge Qrr 0.5 µC VR=400V,IF=11.0A, diF/dt=100A/µs (see table 8) Peak reverse recovery current Irrm 7.6 A Final Data Sheet Min. 7 Typ. Max. Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 160 1 µs 140 10 µs 10 1 100 µs 120 1 ms 100 10 ms ID[A] Ptot[W] 100 80 DC 10 60 -1 40 10-2 20 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 10 µs 101 100 µs 1 ms 100 100 0.5 ZthJC[K/W] ID[A] 10 ms DC 10-1 0.2 10-1 0.1 0.05 0.02 10-2 0.01 single pulse 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 60 35 20 V 20 V 30 10 V 50 10 V 8V 25 40 8V 7V ID[A] ID[A] 20 30 15 7V 20 6V 10 10 5.5 V 6V 5 5V 5.5 V 0 4.5 V 0 5 10 4.5 V 5V 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.50 0.45 1.40 0.40 1.30 1.20 0.35 1.10 0.30 0.90 0.80 5 V 5.5 V 6V 6.5 V RDS(on)[Ω] RDS(on)[Ω] 1.00 7V 0.70 0.60 10 V 0.50 0.25 typ 98% 0.20 0.15 0.40 0.30 0.10 0.20 0.10 0 10 20 30 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=7.3A;VGS=10V 9 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 60 10 9 50 25 °C 8 120 V 400 V 7 40 VGS[V] ID[A] 6 30 150 °C 5 4 20 3 2 10 1 0 0 2 4 6 8 10 0 12 0 25 VGS[V] 50 75 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=11Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 500 450 400 350 101 IF[A] EAS[mJ] 300 125 °C 25 °C 100 250 200 150 100 50 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=3.3A;VDD=50V 10 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 760 740 Ciss 720 103 680 C[pF] VBR(DSS)[V] 700 660 Coss 102 640 101 620 Crss 600 580 -50 0 50 100 150 200 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 8 7 6 Eoss[µJ] 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 7PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 8AppendixA Table11RelatedLinks • IFXDesignTools:www.infineon.com • IFXCoolMOSWebpage:www.infineon.com Final Data Sheet 14 Rev.2.0,2014-03-19 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD RevisionHistory IPL65R210CFD Revision:2014-03-19,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-03-19 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2014-03-19