J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers. http://onsemi.com Features • • • • • • • • 1 DRAIN N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb−Free Packages are Available* 3 GATE 2 SOURCE MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit Gate−Source Voltage Rating VGS −25 Vdc Drain −Gate Voltage VDG −25 Vdc Gate Current IG 10 mAdc Total Device Dissipation PD 310 2.82 mW mW/°C @ TA = 25°C Derate above 25°C Operating Junction Temp Range TJ 135 °C Storage Temperature Range Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 CASE 29 TO−92 (TO−226) STYLE 5 J110 AYWW G G 3 J110 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device J110 J110G J110RLRA J110RLRAG Package Shipping † TO−92 1000 Units / Box TO−92 (Pb−Free) 1000 Units / Box TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 6 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: J110/D J110 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)GSS −25 − Vdc IGSS − − −3.0 −200 nAdc (VDS = 5.0 Vdc, ID = 1.0 mAdc) VGS(off) −0.5 −4.0 Vdc (VDS v 0.1 V, VGS = 0 V) RDS(on) − 18 W IDSS 10 − mAdc Cdg(on) + Csg(on) − 85 pF Characteristic STATIC CHARACTERISTICS (IG = −1.0 mAdc) Gate −Source Breakdown Voltage Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) Gate−Source Cutoff Voltage Drain Source On−Resistance Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc) DYNAMIC CHARACTERISTICS Drain−Gate and Source−Gate On−Capacitance (VDS = VGS = 0, f = 1.0 MHz) Drain−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Cdg(off) − 15 pF Source−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Csg(off) − 15 pF 1. Pulse Width = 300 ms, Duty Cycle = 3.0%. Crss, FEEDBACK CAPACITANCE (pF) Ciss, INPUT CAPACITANCE (pF) 100 80 60 VDS = 0 V 5V 40 10 V 20 0 0 −4 −8 −12 −16 100 80 60 40 VDS = 0 V 20 5V 10 V 0 −20 0 −4 −8 −12 −16 VGS, GATE−SOURCE VOLTAGE (VOLTS) VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 1. Common Source Input Capacitance versus Gate−Source Voltage Figure 2. Common Source Reverse Feedback Capacitance versus Gate−Source Voltage 100 16 VGS = 0 V ID, DRAIN CURRENT (mA) 90 RDS(on), DRAIN−SOURCE ON−RESISTANCE (OHMS) −20 12 RDS(on): VDS ≤ 0.1 V RDS(on): VGS = 0 V 8 VGS(off): VDS = 5 V VGS(off): ID = 1.0 mA 4 −0.25 V 80 70 60 −0.5 V 50 40 −0.75 V 30 −1 V 20 −1.25 V 10 0 0 0 −1 −2 −3 −4 −5 −6 −7 −8 0 2 4 6 8 10 12 14 16 18 VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance versus Gate−Source Cutoff Voltage Figure 4. Output Characteristic VGS(off) = −2.0 V http://onsemi.com 2 20 J110 200 300 VGS = 0 V ID, DRAIN CURRENT (mA) 140 120 −1 V 100 80 −1.5 V 60 40 −2 V 20 −2.5 V 0 0 2 4 6 10 8 12 14 16 VGS = 0 V 270 −0.5 V 160 18 240 −0.5 V 210 −1 V 180 −1.5 V 150 120 −2 V 90 60 −2.5 V 30 −3 V 0 0 20 4 2 6 8 10 12 14 16 18 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 5. Output Characteristic VGS(off) = −3.0 V Figure 6. Output Characteristic VGS(off) = −4.0 V 400 VGS = 0 V 360 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA) 180 −0.5 V 320 −1 V 280 240 −1.5 V 200 −2 V 160 −2.5 V 120 −3 V 80 −3.5 V 40 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 7. Output Characteristic VGS(off) = −5.0 V http://onsemi.com 3 20 20 J110 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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