FAIRCHILD J109

J108
J109
J110
G
TO-92
SD
N-Channel Switch
This device is designed for analog or digital switching applications where
very low on resistance is mandatory. Sourced from Process 58.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Units
VDG
Drain-Gate Voltage
Parameter
25
V
VGS
Gate-Source Voltage
- 25
V
IGF
Forward Gate Current
10
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
Max
Units
J108 / J109 / J110
350
2.8
125
mW
mW/°C
°C/W
357
°C/W
J108 / J109 / J110
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
- 3.0
- 200
- 10
- 6.0
- 4.0
nA
nA
V
V
V
8.0
12
18
mA
mA
mA
Ω
Ω
Ω
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
I G = - 10 µA, VDS = 0
IGSS
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
VGS = - 15 V, VDS = 0
VGS = - 15 V, VDS = 0, TA = 100°C
VDS = 15 V, ID = 10 nA
J108
J109
J110
- 25
- 3.0
- 2.0
- 0.5
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, IGS = 0
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
80
40
10
J108
J109
J110
J108
J109
J110
SMALL SIGNAL CHARACTERISTICS
Cdg(on)
Csg(off)
Cdg(off)
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
85
pF
Drain-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
15
pF
Csg(off)
Source-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
15
pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Parameter Interactions
(Ω )
Common Drain-Source
r DS - DRAIN "ON" RESISTANCE
- 1.0 V
- 3.0 V
60
40
- 4.0 V
T A = 25°C
20
TYP V GS(off) = - 5.0 V
- 5.0 V
0
0
0.4
0.8
1.2
1.6
VDS - DRAIN-SOURCE VOLTAGE (V)
2
50
r DS @ V DS = 100mV, V GS = 0
V GS(off) @ V DS = 5.0V, I
D
1,000
500
= 3.0 nA
r DS
10
100
5
50
I DSS
_
10
_
_
_
0.5
1
5
10
- GATE CUTOFF VOLTAGE (V)
_
0.1
VGS (OFF)
DRAIN CURRENT (mA)
80
I DSS @ V DS = 5.0V, V GS = 0 PULSED
DSS -
- 2.0 V
V GS = 0 V
100
I
I D - DRAIN CURRENT (mA)
100
J108 / J109 / J110
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Common Drain-Source
Common Drain-Source
C ts (C rs ) - CAPACITANCE (pF)
100
50
- DRAIN CURRENT (mA)
f = 0.1 - 1.0 MHz
C iss (V DS = 5.0V)
10
-4
-8
-12
-16
V GS - GATE-SOURCE VOLTAGE (V)
30
V GS = 0 V
20
- 0.1 V
- 0.3 V
- 0.2 V
- 0.4 V - 0.5 V
10
Normalized Drain Resistance
vs Bias Voltage
100
50
20
V GS(off) @ 5.0V, 10 µ A
r DS
r DS =
10
0
-20
VGS
1 -________
V GS(off)
5
2
0
1
50
5
I D = 1.0 mA
I D = 10 mA
I D = 10 mA
TURN-OFF TIME (ns)
4
2
40
V GS(off) = - 8.5V
V GS(off) = - 5.5V
30
V
V GS(off)
-2
-4
-6
-8
-10
- GATE-SOURCE CUTOFF VOLTAGE (V)
GS(off)
= - 3.5V
20
TA = 25°C
V DD = 1.5V
10
V GS(off) = - 12V
t
0
100
Switching Turn-On Time
vs Drain Current
OFF-
- TURN-ON TIME (ns)
I D = 30 mA
t
ON
VDD = 1.5V
V GS(off) = - 12V
0
0.1
0.5 1 2
10
f - FREQUENCY (kHz)
50
TA = 25°C
6
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥ 1.0 kHz
10
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
8
5
V DG = 10V
1
0.01 0.03
0
0.2
0.4
0.6
0.8
1
VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V)
10
1
2
3
4
VDS - DRAIN-SOURCE VOLTAGE (V)
Noise Voltage vs Frequency
100
e n - NOISE VOLTAGE (nV / √ Hz)
0
r DS - NORMALIZED RESISTANCE
TYP V GS(off) = - 0.7 V
40
I
D
C rss (VDS = 0 )
TA = 25°C
0
0
5
10
15
20
I D - DRAIN CURRENT (mA)
25
J108 / J109 / J110
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Output Conductance
vs Drain Current
125°C
125°C
10
5
25°C
- 55°C
V GS(off) = - 5.0V
25°C
1
1
ID
10
- DRAIN CURRENT (mA)
100
100
V DG = 5.0V
10V
V GS(off)
100
T A = 25°C
T A = - 55°C
V DG = 10V
T A = 25°C
f = 1.0 kHz
T A = 125°C
V GS(off) = - 1.0V
V GS(off) = - 3.0V
V GS(off) = - 5.0V
ID
1
- DRAIN CURRENT (mA)
15V
10V
10
5.0V
15V
20V
10V
15V
- 2.0V
20V
T A = 25°C
f = 1.0 kHz
- 1.0V
1
0.1
ID
1
- DRAIN CURRENT (mA)
10
Power Dissipation vs
Ambient Temperature
10
1
0.1
5.0V
20V
- 4.0V
Transconductance
vs Drain Current
PD - POWER DISSIPATION (mW)
g fs - TRANSCONDUCTANCE (mmhos)
- OUTPUT CONDUCTANCE ( µ mhos)
V GS(off) = - 3.0V
os
V GS = 0
50
g
Ω)
r DS - DRAIN "ON" RESISTANCE (Ω
On Resistance vs Drain Current
100
10
350
300
TO-92
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE ( oC)
125
150
J108 / J109 / J110
N-Channel Switch