JFET VHF/UHF Amplifiers

2N5486
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
• Pb−Free Packages are Available*
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1 DRAIN
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain −Gate Voltage
VDG
25
Vdc
Reverse Gate −Source Voltage
VGSR
25
Vdc
ID
30
mAdc
Forward Gate Current
IG(f)
10
mAdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
TJ, Tstg
−65 to +150
°C
Drain Current
Operating and Storage Junction
Temperature Range
3
GATE
2 SOURCE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−92 (TO−226AA)
CASE 29−11
STYLE 5
MARKING DIAGRAM
2N
5486
AYWWG
G
2N5486 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
2N5486
2N5486G
Package
Shipping
TO−92
1000 Units / Bulk
TO−92
(Pb−Free)
1000 Units / Bulk
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 2
1
Publication Order Number:
2N5486/D
2N5486
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
−25
−
−
Vdc
IGSS
−
−
−
−
−1.0
−0.2
nAdc
mAdc
VGS(off)
−2.0
−
−6.0
Vdc
IDSS
8.0
−
20
mAdc
⎪yfs⎪
4000
−
8000
mmhos
Re(yis)
−
−
1000
mmhos
⎪yos⎪
−
−
75
mmhos
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = −20 Vdc, VDS = 0)
(VGS = −20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero−Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Re(yos)
−
−
100
mmhos
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Re(yfs)
3500
−
−
mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
−
5.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
−
1.0
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
−
2.0
pF
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
(VDS = 15 Vdc, Tchannel = 25°C)
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
bis @ 0.25 IDSS
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
grs @ IDSS, 0.25 IDSS
10
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 2. Reverse Transfer Admittance (yrs)
20
10
10
7.0
5.0
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 1. Input Admittance (yis)
20
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
5.0
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.3
0.2
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
Figure 3. Forward Transadmittance (yfs)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 4. Output Admittance (yos)
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2
2N5486
COMMON SOURCE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
1.0
40°
350°
340°
330°
320°
40°
310°
50°
20°
10°
310°
900
500
ID = IDSS
800
60°
300°
400
500
0.7
600
0.6
290°
400
80°
280°
900
300°
0.1
500
70°
290°
0.2
700
600
700
800
700
800
90°
320°
ID = IDSS, 0.25 IDSS
600
80°
330°
0.4
300
70°
340°
0.3
400
50°
0.8
350°
300
200
60°
0°
200
100
0.9
30°
ID = 0.25 IDSS
100
300
280°
0.0
200
270°
90°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
900
150°
160°
170°
180°
190°
200°
210°
150°
160°
170°
Figure 5. S11s
30°
20°
10°
0°
350°
340°
330°
30°
20°
10°
80°
90°
700
110°
0.4
800
600
100°
210°
0°
350°
340°
330°
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
260°
100°
260°
250°
110°
250°
240°
120°
240°
230°
130°
230°
220°
140°
220°
320°
310°
300°
0.7
290°
900
700
600
200°
40°
0.5
60°
900
190°
320°
0.6
50°
800
180°
Figure 6. S12s
40°
70°
270°
100
500
0.3
ID = 0.25 IDSS
500
0.3
100
400
400
280°
0.6
300
200
0.4
100
0.5
300
120°
ID = IDSS
200
130°
0.6
140°
150°
160°
170°
180°
190°
200°
210°
150°
Figure 7. S21s
160°
170°
180°
190°
Figure 8. S22s
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3
200°
210°
2N5486
COMMON GATE CHARACTERISTICS
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
20
10
7.0
5.0
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2
gig @ IDSS, 0.25 IDSS
10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 10. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 9. Input Admittance (yig)
20
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
Figure 11. Forward Transfer Admittance (yfg)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 12. Output Admittance (yog)
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4
2N5486
COMMON GATE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
350°
340°
330°
30°
0.7
40°
100
310°
50°
300°
60°
290°
70°
280°
80°
0°
350°
340°
330°
0.04
200
300
320°
0.03
400
100
500
200
ID = IDSS
0.4
310°
600
300
0.5
60°
70°
40°
10°
ID = 0.25 IDSS
0.6
50°
320°
20°
0.02
700
400
500
300°
800
600
900
0.01
290°
700
80°
800
0.3
900
90°
90°
270°
100°
ID = IDSS
110°
110°
250°
270°
500
600
100°
260°
280°
0.0
100
700
600
700
260°
ID = 0.25 IDSS
250°
0.01
800
120°
120°
240°
240°
800
0.02
900
130°
130°
230°
230°
900
140°
140°
220°
150°
160°
170°
180°
190°
200°
210°
20°
10°
0°
350°
150°
160°
170°
340°
330°
30°
20°
10°
40°
320°
190°
0°
1.5
1.0
350°
300
200°
210°
340°
330°
500
200
100
700
600
800
0.9
ID = IDSS
320°
400
100
0.4
50°
180°
Figure 14. S12g
0.5
40°
220°
0.04
Figure 13. S11g
30°
0.03
900
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
100
ID = IDSS, 0.25 IDSS
0.3
0.8
60°
0.2
70°
310°
ID = 0.25 IDSS
80°
0.1
900
90°
300°
0.7
290°
280°
0.6
900
150°
160°
170°
180°
190°
200°
210°
150°
Figure 15. S21g
160°
170°
180°
190°
Figure 16. S22g
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5
200°
210°
2N5486
PACKAGE DIMENSIONS
TO−92 (TO−226AA)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
Sales Representative
2N5486/D