Order this document by MPF102/D SEMICONDUCTOR TECHNICAL DATA N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Junction Temperature Range TJ 125 °C Storage Temperature Range Tstg – 65 to +150 °C 1 2 3 CASE 29–04, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS – 25 — Vdc — — –2.0 – 2.0 nAdc µAdc OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = –10 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc, VDS = 0) (VGS = –15 Vdc, VDS = 0, TA = 100°C) IGSS Gate – Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) — – 8.0 Vdc Gate – Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) VGS –0.5 –7.5 Vdc IDSS 2.0 20 mAdc 2000 1600 7500 — ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) SMALL– SIGNAL CHARACTERISTICS Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) yfs Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) — 800 mmhos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) — 200 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 3.0 pF 1. Pulse Test; Pulse Width mmhos v 630 ms, Duty Cycle v 10%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 MPF102 POWER GAIN 24 f = 100 MHz PG , POWER GAIN (dB) 20 16 12 400 MHz Tchannel = 25°C VDS = 15 Vdc VGS = 0 V 8.0 4.0 2.0 0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14 Figure 1. Effects of Drain Current Reference Designation NEUTRALIZING COIL INPUT TO 50 Ω SOURCE C2 L1 C4 C5 Rg′ Adjust VGS for ID = 50 mA VGS < 0 Volts *L2 *L3 TO 500 Ω LOAD L2 CASE L3 C6 C7 VGS *L1 C3 C1 NOTE: COMMON VDS +15 V ID = 5.0 mA The noise source is a hot–cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). 17 turns, (approx. — depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32″ ceramic coil form. Tuning provided by a powdered iron slug. 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long, 3/8″ I.D. (AIR CORE). 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long, 3/8″ I.D. (AIR CORE). **L1 **L2 **L3 VALUE 100 MHz 400 MHz C1 7.0 pF 1.8 pF C2 1000 pF 17 pF C3 3.0 pF 1.0 pF C4 1–12 pF 0.8–8.0 pF C5 1–12 pF 0.8–8.0 pF C6 0.0015 µF 0.001 µF C7 0.0015 µF 0.001 µF L1 3.0 µH* 0.2 µH** L2 0.15 µH* 0.03 µH** L3 0.14 µH* 0.022 µH** 6 turns, (approx. — depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32″ ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8″ I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D. (AIR CORE). Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPF102 NOISE FIGURE (Tchannel = 25°C) 10 6.5 ID = 5.0 mA VDS = 15 V VGS = 0 V 5.5 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 6.0 f = 400 MHz 4.0 2.0 4.5 f = 400 MHz 3.5 2.5 100 MHz 0 100 MHz 1.5 0 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 18 0 20 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 2.0 Figure 3. Effects of Drain–Source Voltage 12 14 Figure 4. Effects of Drain Current INTERMODULATION CHARACTERISTICS Pout , OUTPUT POWER PER TONE (dB) + 40 3RD ORDER INTERCEPT + 20 VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 0 – 20 – 40 – 60 – 80 – 100 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS – 120 – 140 – 160 – 120 – 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS – 80 – 60 – 40 – 20 Pin, INPUT POWER PER TONE (dB) 0 + 20 Figure 5. Third Order Intermodulation Distortion Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPF102 COMMON SOURCE CHARACTERISTICS 30 20 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 |bfs| @ IDSS |bfs| @ 0.25 IDSS 500 700 1000 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 gos @ 0.25 IDSS 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 8. Forward Transadmittance (yfs) 4 50 70 100 200 300 f, FREQUENCY (MHz) 10 10 7.0 5.0 0.3 0.2 10 30 Figure 7. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 6. Input Admittance (yis) 20 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 9. Output Admittance (yos) Motorola Small–Signal Transistors, FETs and Diodes Device Data MPF102 COMMON SOURCE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 1.0 40° 350° 100 340° 330° 320° 40° 310° 50° 20° 10° 330° 0.4 320° 310° ID = IDSS, 0.25 IDSS 300 0.8 900 500 ID = IDSS 60° 800 300° 400 60° 500 0.7 600 0.6 300° 0.1 500 70° 290° 400 700 800 700 800 290° 0.2 700 600 600 90° 340° 0.3 400 80° 350° 300 200 50° 70° 0° 200 100 0.9 30° ID = 0.25 IDSS 280° 80° 300 280° 0.0 200 900 270° 90° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 900 150° 160° 170° 180° 190° 200° 210° 150° 160° Figure 10. S11s 30° 20° 10° 0° 350° 170° 340° 330° 30° 20° 10° 80° 90° 700 110° 0.4 800 600 100° 210° 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 260° 100° 260° 250° 110° 250° 240° 120° 240° 230° 130° 230° 220° 140° 220° 320° 310° 300° 0.7 290° 900 700 600 200° 40° 0.5 60° 900 190° 320° 0.6 50° 800 180° Figure 11. S12s 40° 70° 270° 100 500 0.3 ID = 0.25 IDSS 500 0.3 100 400 400 280° 0.6 300 200 0.4 100 0.5 300 120° ID = IDSS 200 130° 0.6 140° 150° 160° 170° 180° 190° 200° 210° Figure 12. S21s Motorola Small–Signal Transistors, FETs and Diodes Device Data 150° 160° 170° 180° 190° 200° 210° Figure 13. S22s 5 MPF102 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS big @ 0.25 IDSS 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.5 0.3 brg @ IDSS 0.2 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 gog @ 0.25 IDSS 0.1 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 16. Forward Transfer Admittance (yfg) 6 30 Figure 15. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 14. Input Admittance (yig) 20 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 17. Output Admittance (yog) Motorola Small–Signal Transistors, FETs and Diodes Device Data MPF102 COMMON GATE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 350° 340° 330° 30° 0.7 40° 100 310° 50° 300° 60° 290° 70° 280° 80° 0° 350° 340° 330° 320° 0.04 200 300 0.03 400 100 500 200 0.5 ID = IDSS 0.4 310° 600 300 60° 70° 40° 10° ID = 0.25 IDSS 0.6 50° 320° 20° 0.02 700 400 500 300° 800 600 900 0.01 290° 700 80° 800 0.3 900 90° 270° 100° 260° 90° 250° 270° 500 600 100° ID = IDSS 110° 280° 0.0 100 110° 700 600 700 260° ID = 0.25 IDSS 250° 0.01 800 120° 240° 120° 240° 800 0.02 900 130° 230° 130° 230° 900 140° 220° 150° 160° 170° 180° 190° 200° 140° 210° 20° 10° 0° 350° 150° 160° 170° 340° 330° 30° 320° 20° 10° 40° 0° 1.5 1.0 100 100 0.4 50° 180° 190° 200° 210° 340° 330° Figure 19. S12g 0.5 40° 220° 0.04 Figure 18. S11g 30° 0.03 ID = IDSS 350° 300 200 500 320° 400 700 600 800 0.9 900 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 100 ID = IDSS, 0.25 IDSS 0.3 0.8 60° 0.2 70° 310° ID = 0.25 IDSS 80° 0.1 300° 0.7 290° 280° 0.6 900 90° 900 150° 160° 170° 180° 190° 200° 210° Figure 20. S21g Motorola Small–Signal Transistors, FETs and Diodes Device Data 150° 160° 170° 180° 190° 200° 210° Figure 21. S22g 7 MPF102 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D X X G J H V C SECTION X–X 1 N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE Motorola reserves the right to make changes without further notice to any products herein. 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