ON Semiconductor 1 DRAIN JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol Value Unit VDG 25 Vdc VGSR 25 Vdc ID 30 mAdc IG(f) 10 mAdc PD 350 2.8 mW mW/°C TJ, Tstg –65 to +150 °C 1 2 3 CASE 29–11, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)GSS –25 — — Vdc — — — — –1.0 –0.2 nAdc µAdc –2.0 — –6.0 8.0 — 20 4000 — 8000 — — 1000 — — 75 — — 100 3500 — — Characteristic OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = –20 Vdc, VDS = 0) (VGS = –20 Vdc, VDS = 0, TA = 100°C) IGSS Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) Vdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS mAdc SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yfs Input Admittance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yis) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yos) Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yfs) Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 0 1 mhos mhos mhos mhos mhos Publication Order Number: 2N5486/D 2N5486 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — — 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — — 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss — — 2.0 pF SMALL–SIGNAL CHARACTERISTICS (continued) COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 3.0 2.0 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 500 700 1000 brs @ IDSS 1.0 0.7 0.5 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 5.0 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 2 2N5486 COMMON SOURCE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 1.0 40° 350° 100 340° 400 300 0.8 60° ID = IDSS 0.6 800 310° 50° 10° 0° 350° 340° 330° 0.4 320° 700 800 700 300° 60° 290° 70° 280° 80° 900 0.3 ID = IDSS, 0.25 IDSS 310° 900 800 0.2 300° 700 600 600 500 600 80° 40° 500 400 0.7 70° 320° 20° 300 200 0.9 30° 200 100 50° 330° ID = 0.25 IDSS 0.1 500 290° 400 300 280° 0.0 200 270° 90° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 90° 900 150° 160° 170° 180° 190° 200° 210° 150° 160° 170° Figure 5. S11s 30° 20° 10° 0° 350° 340° 330° 0.6 0.5 60° 900 70° 80° 90° 100° 110° 120° 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 180° 190° 200° 210° Figure 6. S12s 40° 50° 270° 100 130° 30° 20° 10° 0° 350° 340° 330° 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320° 40° 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 260° 100° 260° 250° 110° 250° 240° 120° 240° 230° 130° 230° 220° 140° 220° 0.7 320° 310° 300° 290° 280° 0.6 0.6 140° 150° 160° 170° 180° 190° 200° 210° 150° Figure 7. S21s 160° 170° 180° 190° Figure 8. S22s http://onsemi.com 3 200° 210° 2N5486 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 2N5486 COMMON GATE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 350° 340° 0.7 40° 100 100 200 200 0.5 300 300 60° ID = IDSS 0.4 70° 400 700 400 500 310° 50° 300° 60° 290° 70° 280° 80° 600 900 270° 260° 100° 110° 250° 110° 120° 240° 120° 130° 230° 130° 220° 140° 170° 180° 190° 20° 10° 0° 350° 200° 100 600 ID = IDSS 700 300° 290° 280° 0.0 270° 500 600 700 800 800 260° ID = 0.25 IDSS 250° 0.01 240° 0.02 230° 900 0.03 220° 0.04 150° 160° 170° 180° 190° 200° 210° 340° 330° Figure 14. S12g 340° 330° 30° 20° 10° 40° 320° 0° 1.5 1.0 100 100 0.4 320° 0.01 140° 210° 0.5 40° 330° 0.02 Figure 13. S11g 30° 340° 310° 900 160° 350° 0.04 90° 100° 150° 0° 800 900 90° 40° 10° 600 800 0.3 320° 20° 0.03 500 700 80° 30° ID = 0.25 IDSS 0.6 50° 330° 350° 300 200 400 320° 700 600 800 0.9 ID = IDSS 500 900 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 50° 100 0.3 60° 0.2 70° 80° ID = 0.25 IDSS 0.1 900 90° 900 100° 150° 160° 170° 180° 190° 200° 210° ID = IDSS, 0.25 IDSS 0.8 Figure 15. S21g 300° 0.7 290° 280° 0.6 150° 160° 170° 180° 190° Figure 16. S22g http://onsemi.com 5 310° 200° 210° 2N5486 PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- 2N5486 Notes http://onsemi.com 7 2N5486 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 2N5486/D