ONSEMI 2N5484

Order this document
by 2N5484/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel — Depletion
1 DRAIN
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Drain – Gate Voltage
Reverse Gate – Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VDG
25
Vdc
VGSR
25
Vdc
ID
30
mAdc
IG(f)
10
mAdc
PD
350
2.8
mW
mW/°C
TJ, Tstg
– 65 to +150
°C
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
– 25
—
—
Vdc
—
—
—
—
–1.0
– 0.2
nAdc
µAdc
– 0.3
– 2.0
—
—
– 3.0
– 6.0
1.0
8.0
—
—
5.0
20
3000
4000
—
—
6000
8000
—
—
—
—
100
1000
—
—
—
—
50
75
—
—
—
—
75
100
2500
3500
—
—
—
—
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
(VGS = –20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
IGSS
VGS(off)
2N5484
2N5486
Vdc
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
2N5484
2N5486
IDSS
mAdc
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yfs
2N5484
2N5486
mmhos
mmhos
Re(yis)
2N5484
2N5486
yos
2N5484
2N5486
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
2N5484
2N5486
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
2N5484
2N5486
mmhos
mmhos
Re(yos)
mmhos
Re(yfs)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
—
5.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
—
1.0
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
—
2.0
pF
—
—
—
—
—
—
—
4.0
—
—
2.5
3.0
—
2.0
4.0
16
—
18
10
—
14
—
—
25
—
30
20
SMALL– SIGNAL CHARACTERISTICS (continued)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 1.0 kHz)
(VDS = 15 Vdc, ID = 1.0 mAdc, RG ≈ 1.0 kΩ, f = 100 MHz)
(VDS = 15 Vdc, ID = 1.0 mAdc, RG ≈ 1.0 kΩ, f = 200 MHz)
(VDS = 15 Vdc, ID = 4.0 mAdc, RG ≈ 1.0 kΩ, f = 100 MHz)
(VDS = 15 Vdc, ID = 4.0 mAdc, RG ≈ 1.0 kΩ, f = 400 MHz)
NF
2N5484
2N5484
2N5486
2N5486
Common Source Power Gain
(VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz)
(VDS = 15 Vdc, ID = 1.0 mAdc, f = 200 MHz)
(VDS = 15 Vdc, ID = 4.0 mAdc, f = 100 MHz)
(VDS = 15 Vdc, ID = 4.0 mAdc, f = 400 MHz)
2N5484
2N5484
2N5486
2N5486
dB
Gps
dB
POWER GAIN
24
f = 100 MHz
PG , POWER GAIN (dB)
20
16
12
400 MHz
Tchannel = 25°C
VDS = 15 Vdc
VGS = 0 V
8.0
4.0
0
2.0
4.0
6.0
8.0
10
ID, DRAIN CURRENT (mA)
12
14
Figure 1. Effects of Drain Current
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NEUTRALIZING
COIL
INPUT
TO 50 Ω
SOURCE
C2
L1
C4
C5
Rg′
*L2
*L3
7.0 pF
1.8 pF
C2
1000 pF
17 pF
TO 500 Ω
LOAD
L2
C6
C7
COMMON
VDS
+15 V
VGS
*L1
400 MHz
C1
CASE
L3
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
100 MHz
C3
C1
NOTE:
ID = 5.0 mA
The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32″ ceramic coil
form. Tuning provided by a powdered iron slug.
4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,
3/8″ I.D. (AIR CORE).
3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,
3/8″ I.D. (AIR CORE).
**L1
**L2
**L3
VALUE
Reference
Designation
C3
3.0 pF
1.0 pF
C4
1–12 pF
0.8–8.0 pF
C5
1–12 pF
0.8–8.0 pF
C6
0.0015 µF
0.001 µF
C7
0.0015 µF
0.001 µF
L1
3.0 µH*
0.2 µH**
L2
0.15 µH*
0.03 µH**
L3
0.14 µH*
0.022 µH**
6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32″ ceramic coil
form. Tuning provided by an aluminum slug.
1 turn, AWG #16 enameled copper wire, 3/8″ I.D.
(AIR CORE).
1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.
(AIR CORE).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
NOISE FIGURE
(Tchannel = 25°C)
6.5
10
ID = 5.0 mA
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
VDS = 15 V
VGS = 0 V
5.5
8.0
6.0
f = 400 MHz
4.0
2.0
4.5
f = 400 MHz
3.5
2.5
100 MHz
100 MHz
1.5
0
0
2.0
4.0 6.0 8.0
10
12
14
16
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
18
0
20
4.0
6.0
8.0
10
ID, DRAIN CURRENT (mA)
2.0
Figure 3. Effects of Drain–Source Voltage
12
14
Figure 4. Effects of Drain Current
INTERMODULATION CHARACTERISTICS
Pout , OUTPUT POWER PER TONE (dB)
+ 40
3RD ORDER INTERCEPT
+ 20
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
0
– 20
– 40
– 60
– 80
– 100
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
– 120
– 140
– 160
– 120
– 100
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
– 80
– 60
– 40
– 20
Pin, INPUT POWER PER TONE (dB)
0
+ 20
Figure 5. Third Order Intermodulation Distortion
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
COMMON SOURCE CHARACTERISTICS
30
20
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
grs @ IDSS, 0.25 IDSS
10
20
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
500 700 1000
5.0
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.01
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 8. Forward Transadmittance (yfs)
4
50 70 100
200 300
f, FREQUENCY (MHz)
10
10
7.0
5.0
0.3
0.2
10
30
Figure 7. Reverse Transfer Admittance (yrs)
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 6. Input Admittance (yis)
20
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 9. Output Admittance (yos)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
1.0
40°
350°
100
340°
330°
320°
40°
310°
50°
20°
10°
330°
0.4
320°
310°
ID = IDSS, 0.25 IDSS
300
0.8
900
500
ID = IDSS
60°
800
300°
400
60°
500
0.7
600
0.6
300°
0.1
500
70°
290°
400
700
800
700
800
290°
0.2
700
600
600
90°
340°
0.3
400
80°
350°
300
200
50°
70°
0°
200
100
0.9
30°
ID = 0.25 IDSS
280°
80°
300
280°
0.0
200
900
270°
90°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
900
150°
160°
170°
180°
190°
200°
210°
150°
160°
Figure 10. S11s
30°
20°
10°
0°
350°
170°
340°
330°
30°
20°
10°
80°
90°
700
110°
0.4
800
600
100°
210°
0°
350°
340°
330°
100 200
ID = 0.25 IDSS
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
260°
100°
260°
250°
110°
250°
240°
120°
240°
230°
130°
230°
220°
140°
220°
320°
310°
300°
0.7
290°
900
700
600
200°
40°
0.5
60°
900
190°
320°
0.6
50°
800
180°
Figure 11. S12s
40°
70°
270°
100
500
0.3
ID = 0.25 IDSS
500
0.3
100
400
400
280°
0.6
300
200
0.4
100
0.5
300
120°
ID = IDSS
200
130°
0.6
140°
150°
160°
170°
180°
190°
200°
210°
Figure 12. S21s
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150°
160°
170°
180°
190°
200°
210°
Figure 13. S22s
5
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
10
7.0
5.0
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
20
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.5
0.3
brg @ IDSS
0.2
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
gig @ IDSS, 0.25 IDSS
10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 16. Forward Transfer Admittance (yfg)
6
30
Figure 15. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 14. Input Admittance (yig)
20
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 17. Output Admittance (yog)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
350°
340°
330°
30°
0.7
40°
100
310°
50°
300°
60°
290°
70°
280°
80°
0°
350°
340°
330°
320°
0.04
200
300
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310°
600
300
60°
70°
40°
10°
ID = 0.25 IDSS
0.6
50°
320°
20°
0.02
700
400
500
300°
800
600
900
0.01
290°
700
80°
800
0.3
900
90°
270°
100°
260°
90°
250°
270°
500
600
100°
ID = IDSS
110°
280°
0.0
100
110°
700
600
700
260°
ID = 0.25 IDSS
250°
0.01
800
120°
240°
120°
240°
800
0.02
900
130°
230°
130°
230°
900
140°
220°
150°
160°
170°
180°
190°
200°
140°
210°
20°
10°
0°
350°
150°
160°
170°
340°
330°
30°
20°
10°
40°
320°
0°
1.5
1.0
100
100
0.4
50°
180°
190°
200°
210°
340°
330°
Figure 19. S12g
0.5
40°
220°
0.04
Figure 18. S11g
30°
0.03
ID = IDSS
350°
300
200
500
320°
400
700
600
800
0.9
900
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
100
ID = IDSS, 0.25 IDSS
0.3
0.8
60°
0.2
70°
310°
ID = 0.25 IDSS
80°
0.1
300°
0.7
290°
280°
0.6
900
90°
900
150°
160°
170°
180°
190°
200°
210°
Figure 20. S21g
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150°
160°
170°
180°
190°
200°
210°
Figure 21. S22g
7
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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8
◊
2N5484/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data