NTMFS4H013NF Power MOSFET 25 V, 269 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load www.onsemi.com VGS MAX RDS(on) TYP QGTOT 4.5 V 1.4 mW 26 nC 10 V 0.9 mW 56 nC PIN CONNECTIONS MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter SO8−FL (5 x 6 mm) Symbol Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 43 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 2.70 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 269 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 104 W Pulsed Drain Current (tp = 10 ms) IDM 505 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 51 Apk, L = 0.3 mH) EAS 390 mJ G Drain to Source dV/dt dV/dt 7 V/ns (4) TJ(max) 150 °C Storage Temperature Range TSTG −55 to 150 °C Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) TSLD 260 °C Maximum Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 33 A, EAS = 164 mJ. (Top View) (Bottom View) N−CHANNEL MOSFET D (5−8) S (1, 2, 3) ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 40.0 1.5 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. © Semiconductor Components Industries, LLC, 2014 October, 2014 − Rev. 0 1 Publication Order Number: NTMFS4H013NF/D NTMFS4H013NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS V 34.5 VGS = 0 V, VDS = 20 V TJ = 25 °C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = +20 V VGS(TH) VGS = VDS, ID = 250 mA mV/°C 500 mA +100 nA 2.1 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 4.6 mV/°C VGS = 10 V ID = 30 A 0.72 0.9 VGS = 4.5 V ID = 30 A 1.1 1.4 gFS VDS = 12 V, ID = 15 A 119 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 114 Total Gate Charge QG(TOT) 26 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge Gate Resistance 3923 VGS = 0 V, f = 1 MHz, VDS = 12 V 2537 pF 2.9 VGS = 4.5 V, VDS = 12 V; ID = 30 A nC 10.7 5.8 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 56 nC RG TA = 25°C 1.0 W SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 17.6 VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 55.1 ns 29.4 9.96 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 11.3 VGS = 10 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 44.2 ns 39.2 7.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2.0 A TJ = 25°C 0.38 TJ = 125°C 0.297 0.6 V 61.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 30.4 ns 30.9 66 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4H013NF TYPICAL CHARACTERISTICS VGS = 10 V to 3.0 V VGS = 2.8 V 160 140 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 160 120 100 VGS = 2.6 V 80 60 40 VGS = 2.4 V 120 100 80 TJ = 125°C 60 TJ = 25°C 40 20 20 VGS = 2.0 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2.5 2.0 1.5 1.0 0.5 0 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 2.5 3.0 3.5 4.0 1.2 VGS = 4.5 V 1.1 1.0 TJ = 25°C 0.9 0.8 VGS = 10 V 0.7 0.6 20 40 60 80 100 140 120 160 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 1E−01 ID = 30 A VGS = 10 V TJ = 150°C 1E−02 TJ = 125°C −IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 2.0 Figure 2. Transfer Characteristics 3.0 1.5 1E−03 1.4 1.3 TJ = 85°C 1E−04 1.2 1.1 1E−05 1.0 0.9 0.8 0.7 −50 1.5 Figure 1. On−Region Characteristics TJ = 25°C ID = 30 A 1.6 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.5 1.7 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4.0 2 TJ = −55°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) VDS ≤ 10 V 140 TJ = 25°C 1E−06 1E−07 −25 0 25 50 75 100 125 150 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 25 NTMFS4H013NF TYPICAL CHARACTERISTICS −VGS, GATE−TO−SOURCE VOLTAGE (V) 5000 C, CAPACITANCE (pF) 4500 Ciss 4000 3500 3000 Coss TJ = 25°C VGS = 12 V f = 1 MHz 2500 2000 1500 1000 500 0 Crss 0 5 10 15 20 25 QT 8 6 Qgs 4 Qgd TJ = 25°C VDS = 12 V ID = 30 A 2 0 0 8 16 24 32 40 56 48 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 160 1000 VDS = 12 V ID = 15 A VGS = 10 V td(off) IS, SOURCE CURRENT (A) t, TIME (ns) 10 tf 100 tr td(on) 10 140 120 TJ = 125°C 100 TJ = 25°C 80 60 TJ = −55°C 40 20 0 1 1 10 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 1 ms 10 ms 0 V ≤ VGS ≤ 10 V Single Pulse TA = 25°C TJ = 150°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.6 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 0.01 0.5 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 0.1 0.4 RG, GATE RESISTANCE (W) 1000 1 0.3 100 100 180 160 140 ID = 33 A 120 100 80 60 40 20 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 4 150 NTMFS4H013NF TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 2% 1% 1 PCB Cu Area 645.16 mm2 PCB Cu thk 2 oz 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 100 10 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics 1000 250 ID, DRAIN CURRENT (A) GFS, TRANSCONDUCTANCE (S) 300 200 150 100 100 10 50 1 0 0 20 40 60 80 100 120 140 1E−07 1E−06 1E−05 1E−04 1E−03 ID, DRAIN CURRENT (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics 1E−02 ORDERING INFORMATION Package Shipping† NTMFS4H013NFT1G SO8−FL (Pb-Free) 1500 / Tape & Reel NTMFS4H013NFT3G SO8−FL (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G D H13NF AYWZZ D D www.onsemi.com 5 A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability NTMFS4H013NF PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE K 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C C e SEATING PLANE DETAIL A A 0.10 C DETAIL A 3X 4X 1.270 0.750 4X b 0.10 C A B 0.05 c STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN SOLDERING FOOTPRINT* SIDE VIEW 8X 3X MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ 1.000 e/2 L 1 0.965 4 1.330 K 2X 0.905 2X 0.495 E2 PIN 5 (EXPOSED PAD) G L1 M 4.530 3.200 0.475 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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