NTMFS4985NF D

NTMFS4985NF
Power MOSFET
30 V, 65 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Integrated Schottky Diode
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
Applications
•
•
•
•
RDS(ON) MAX
3.4 mW @ 10 V
30 V
CPU Power Delivery
Synchronous Rectification for DC−DC Converters
Low Side Switching
Telecom Secondary Side Rectification
ID MAX
65 A
5.0 mW @ 4.5 V
N−CHANNEL MOSFET
D
(5, 6)
S
(1, 2, 3)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
Parameter
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
23.9
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
3.04
W
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
ID
36
A
Power Dissipation
RqJA, t v 10 sec
TA = 25°C
PD
7.0
W
TA = 25°C
ID
17.5
A
Continuous Drain
Current RqJA
(Note 2)
TA = 85°C
TA = 85°C
12.6
TA = 25°C
PD
1.63
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
65
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
22.73
W
TA = 25°C
IDM
195
A
TA = 25°C
IDmaxpkg
100
A
TJ,
TSTG
−55 to
+150
°C
IS
64
A
TC = 85°C
tp=10ms
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
47
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, IL = 33 Apk,
L = 0.1 mH, RG = 25 W)
EAS
54
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 2
MARKING
DIAGRAM
D
26
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
(4)
17.2
TA = 85°C
Steady
State
G
1
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4895NF
A
Y
W
ZZ
S
S
S
G
D
4985NF
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4985NFT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4985NFT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Publication Order Number:
NTMFS4985NF/D
NTMFS4985NF
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.5
Junction−to−Ambient – Steady State (Note 1)
RqJA
41.15
Junction−to−Ambient – Steady State (Note 2)
RqJA
76.9
Junction−to−Ambient − t v 10 sec
RqJA
17.86
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
30
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1.0 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 10 mA, referenced to 25°C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VGS = 0 V,
VDS = 24 V
V
15
TJ = 25°C
mV/°C
500
VDS = 0 V, VGS = ±20 V
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS = VDS, ID = 1.0 mA
VGS(TH)/TJ
ID = 10 mA, referenced to 25°C
RDS(on)
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
gFS
1.2
1.6
ID = 30 A
2.7
ID = 15 A
2.7
ID = 30 A
4.0
ID = 15 A
4.0
VDS = 1.5 V, ID = 15 A
2.3
5.0
43
V
mV/°C
3.4
5.0
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
60
Total Gate Charge
QG(TOT)
14.2
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
2100
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
900
1.8
5.9
pF
nC
4.2
QG(TOT)
VGS = 10 V, VDS = 15 V,
ID = 30 A
30.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
11
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
32
21
6.0
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4985NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.5
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26.5
ns
26
4.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.4
TJ = 125°C
0.33
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 2 A
0.7
V
36.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2 A
18
ns
18.5
QRR
32
nC
Source Inductance
LS
0.65
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.20
1.5
1.0
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
W
NTMFS4985NF
TYPICAL PERFORMANCE CURVES
110
4.0 V
4.2 V
120
105
3.6 V
4.4 V to 4.5 V
90
3.4 V
3.2 V
75
7.5 V to 10 V
60
3.0 V
45
2.8 V
30
2.6 V
15
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.030
ID = 30 A
TJ = 25°C
0.025
0.020
60
50
TJ = 125°C
40
30
TJ = 25°C
20
TJ = −55°C
0
5
1
1.5
2
2.5
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.010
0.005
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
4
Figure 2. Transfer Characteristics
5.25E−03
5.00E−03 TJ = 25°C
4.75E−03
4.50E−03
VGS = 4.5 V
4.25E−03
4.00E−03
3.75E−03
3.50E−03
3.25E−03
3.00E−03
0.015
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
70
10
2.4 V
0
80
2.75E−03
2.50E−03
2.25E−03
10
5
VGS = 10 V
20
35
50
65
80
95
110 125 140 155
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.00E−01
ID = 20 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1.00E−02
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
90
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
135
VDS = 5 V
100
VGS = 3.8 V
ID, DRAIN CURRENT (A)
150
TJ = 125°C
1.00E−03
1.00E−04
TJ = 25°C
50
25
0
25
50
75
100
125
150
1.00E−05
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
25
NTMFS4985NF
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL PERFORMANCE CURVES
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
0
5
10
15
20
25
30
Qgs
4
Qgd
ID = 30 A
TJ = 25°C
VDD = 15 V
VGS = 10 V
2
0
0
4
8
12
16
20
24
28
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
32
10.0
9.0
IS, SOURCE CURRENT (A)
t, TIME (ns)
6
QG, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 10 A
VGS = 10 V
td(off)
100
tf
tr
td(on)
10
1
1
10
100
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
VGS = 20 V
Single Pulse
100 TC = 25°C
10 ms
100 ms
10
1 ms
10 ms
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
VGS = 0 V
TJ = 25°C
8.0
RG, GATE RESISTANCE (W)
1
dc
10
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
0.01
QT
10
100
60
55
50
45
40
35
30
25
ID = 33 A
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4985NF
TYPICAL PERFORMANCE CURVES
100
D = 0.5
r(t)
(°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Figure 13. Thermal Response
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6
1
10
100
1000
NTMFS4985NF
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO8 FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
q
E
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
3X
4X
1.270
8X
b
0.10
C A B
0.05
c
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
e/2
L
1
4
0.750
4X
1.000
0.965
1.330
K
2X
0.905
2X
PIN 5
(EXPOSED PAD)
G
0.495
E2
L1
M
4.530
3.200
0.475
2X
D2
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NTMFS4985NF/D