NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS (Clamped) RDS(ON) TYP ID MAX 52 V 107 mW 2.6 A Features • • • • • • Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb−Free Packages are Available Drain (Pins 2, 4) Gate (Pin 1) Applications RG MPWR Overvoltage Protection ESD Protection • Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers Source (Pin 3) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 52−59 V Gate−to−Source Voltage − Continuous VGS ±15 V Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) (Note 1) ID IDM 2.6 10 A Total Power Dissipation @ TA = 25°C (Note 1) PD 1.69 W Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W) EAS 110 mJ Thermal Resistance, Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds RqJA RqJA 74 169 TL 260 °C/W SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM GATE DRAIN SOURCE °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2). 2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in2). 1 4 2 3 AYW xxxxx G G Rating DRAIN (Top View) A = Assembly Location Y = Year W = Work Week xxxxx = F9N05 or 9N05A G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 6 1 Publication Order Number: NIF9N05CL/D NIF9N05CL, NIF9N05ACL MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 52 50.8 55 54 −9.3 59 59.5 V V mV/°C OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 1.0 mA, TJ = 25°C) (VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) (VDS = 40 V, VGS = 0 V, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ±8 V, VDS = 0 V) (VGS = ±14 V, VDS = 0 V) IGSS 10 25 ±22 ±10 mA mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 100 mA) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 3.5 V, ID = 0.6 A) (VGS = 4.0 V, ID = 1.5 A) (VGS = 10 V, ID = 2.6 A) RDS(on) Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A) 1.3 1.75 −4.1 2.5 190 165 107 380 200 125 gFS 3.8 Ciss 155 250 Coss 60 100 Crss 25 40 Ciss 170 Coss 70 Crss 30 V mV/°C mW Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VDS = 35 V, VGS = 0 V, f = 10 kHz Transfer Capacitance Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, f = 10 kHz Transfer Capacitance 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 pF pF NIF9N05CL, NIF9N05ACL MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit td(on) 275 465 ns tr 1418 2400 td(off) 780 1320 1900 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 40 V, ID = 2.6 A, RD = 15.4 W Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RD = 40 W Fall Time Turn−On Delay Time Rise Time VGS = 10 V, VDD = 15 V, ID = 2.6 A, RD = 5.8 W Turn−Off Delay Time Fall Time Gate Charge VGS = 4.5 V, VDS = 40 V, ID = 2.6 A (Note 3) Gate Charge VGS = 4.5 V, VDS = 15 V, ID = 1.5 A (Note 3) tf 1120 td(on) 242 tr 1165 td(off) 906 tf 1273 td(on) 107 tr 290 td(off) 1540 tf 1000 QT 4.5 Q1 0.9 Q2 2.6 QT 3.9 Q1 1.0 Q2 1.7 VSD 0.81 0.66 trr 730 ta 200 tb 530 QRR 6.3 ns ns 7.0 nC nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage IS = 2.6 A, VGS = 0 V (Note 3) IS = 2.6 A, VGS = 0 V, TJ = 125°C Reverse Recovery Time IS = 1.5 A, VGS = 0 V, dIs/dt = 100 A/ms (Note 3) Reverse Recovery Stored Charge 1.5 V ns mC ESD CHARACTERISTICS Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ESD 5000 500 V NIF9N05CL, NIF9N05ACL TYPICAL PERFORMANCE CURVES ID, DRAIN CURRENT (AMPS) VDS ≥ 10 V 4 3.4 V 3.2 V 2 3V 2.8 V 2.6 V 2.4 V 1 2 3 4 5 6 7 8 9 10 4 3 TJ = −55°C 2 TJ = 25°C 1 TJ = 100°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4 2 3 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1 0.4 ID = 2 A TJ = 25°C 0.3 0.2 0.1 0 2 5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 6 TJ = 25°C 3.6 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3.8 V VGS = 10, 5 & 4 V 8 10 4 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 12 0.24 1.9 1.7 6 TJ = 25°C 0.2 VGS = 4 V 0.16 0.12 0.08 VGS = 10 V 1 3 2 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 1000000 ID = 2.6 A VGS = 12 V IDSS, LEAKAGE (A) ID, DRAIN CURRENT (AMPS) 6 1.5 1.3 1.1 0.9 100000 TJ = 150°C TJ = 100°C 10000 0.7 0.5 −50 −25 0 25 50 75 100 125 1000 30 150 35 40 45 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 55 NIF9N05CL, NIF9N05ACL C, CAPACITANCE (pF) TJ = 25°C Ciss 400 VDS = 0 V VGS = 0 V Crss 300 200 Ciss 100 Coss Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 30 35 5 50 QT VDS 4 QGS 40 VGS QGD 3 30 2 20 1 0 10 ID = 2.6 A TJ = 25°C 0 1 2 4 3 QG, TOTAL GATE CHARGE (nC) 5 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 500 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100000 3 IS, SOURCE CURRENT (AMPS) VDD = 40 V ID = 2.6 A VGS = 10 V 10000 t, TIME (ns) Figure 8. Gate−to−Source Voltage vs. Total Gate Charge td(off) tf 1000 tr td(on) 100 10 1 10 100 VGS = 0 V TJ = 25°C 2 1 0 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistance Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1 ORDERING INFORMATION Device Package NIF9N05CLT1 SOT−223 NIF9N05CLT1G SOT−223 (Pb−Free) NIF9N05ACLT1G NIF9N05CLT3 SOT−223 NIF9N05CLT3G SOT−223 (Pb−Free) NIF9N05ACLT3G Shipping† 1000 / Tape & Reel 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NIF9N05CL, NIF9N05ACL PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L STYLE 3: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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