NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance VDSS (Clamped) RDS(ON) TYP ID MAX 52 V 107 mΩ 2.6 A Drain (Pins 2, 4) Gate (Pin 1) Applications • Automotive and Industrial Markets: RG MPWR Overvoltage Protection ESD Protection Solenoid Drivers, Lamp Drivers, Small Motor Drivers MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 52−59 V Gate−to−Source Voltage − Continuous VGS ±15 V Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 s) (Note 1) ID IDM 2.6 10 A Total Power Dissipation @ TA = 25°C (Note 1) PD 1.69 W TJ, Tstg −55 to 150 °C EAS 110 mJ Rating Operating and Storage Temperature Range Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 s SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM 1 GATE 2 DRAIN °C/W RJA RJA 74 169 TL 260 F9N05 AWW Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 ) Source (Pin 3) 4 DRAIN 3 SOURCE (Top View) °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu area 1.127 in2) 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu area 0.412 in2) F9N05 A WW = Specific Device Code = Assembly Location = Work Week ORDERING INFORMATION Package Shipping† NIF9N05CLT1 SOT−223 1000/Tape & Reel NIF9N05CLT3 SOT−223 4000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 3 1 Publication Order Number: NIF9N05CL/D NIF9N05CL MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 52 50.8 55 54 −9.3 59 59.5 V V mV/°C OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 1.0 mA, TJ = 25°C) (VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) Temperature Coefficient (Negative) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) (VDS = 40 V, VGS = 0 V, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ±8 V, VDS = 0 V) (VGS = ±14 V, VDS = 0 V) IGSS A 10 25 ±22 ±10 A ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 100 A) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 3.5 V, ID = 0.6 A) (VGS = 4.0 V, ID = 1.5 A) (VGS = 10 V, ID = 2.6 A) RDS(on) 1.3 Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A) 1.75 −4.1 2.5 190 165 107 380 200 125 V mV/°C m gFS 3.8 Mhos Ciss 155 250 Coss 60 100 Crss 25 40 Ciss 170 Coss 70 Crss 30 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VDS = 35 V, VGS = 0 V, f = 10 kHz Transfer Capacitance Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, f = 10 kHz Transfer Capacitance 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 pF pF NIF9N05CL MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit td(on) 275 465 ns tr 1418 2400 td(off) 780 1320 tf 1120 1900 td(on) 242 tr 1165 td(off) 906 tf 1273 td(on) 107 tr 290 td(off) 1540 tf 1000 QT 4.5 Q1 0.9 Q2 2.6 QT 3.9 Q1 1.0 Q2 1.7 VSD 0.81 0.66 trr 730 ta 200 tb 530 QRR 6.3 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 40 V, ID = 2.6 A, RD = 15.4 Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RD = 40 Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 10 V, VDD = 15 V, ID = 2.6 A, RD = 5.8 Fall Time Gate Charge VGS = 4.5 V, VDS = 40 V, ID = 2.6 A (Note 3) Gate Charge VGS = 4.5 V, VDS = 15 V, ID = 1.5 A (Note 3) ns ns 7.0 nC nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage IS = 2.6 A, VGS = 0 V (Note 3) IS = 2.6 A, VGS = 0 V, TJ = 125°C Reverse Recovery Time IS = 1.5 A, VGS = 0 V, dIs/dt = 100 A/s (Note 3) Reverse Recovery Stored Charge 1.5 V ns C ESD CHARACTERISTICS Electro−Static Discharge Capability ESD Human Body Model (HBM) Machine Model (MM) 5000 500 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 V NIF9N05CL TYPICAL PERFORMANCE CURVES 3.8 V VGS = 10, 5 & 4 V 6 TJ = 25°C VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 6 3.6 V 4 3.4 V 3.2 V 2 3V 2.8 V 2.6 V 2.4 V 0 0 5 4 3 TJ = −55°C 2 TJ = 25°C 1 TJ = 100°C 0 2 1 3 4 5 6 7 8 9 10 4 2 3 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.4 ID = 2 A TJ = 25°C 0.3 0.2 0.1 0 2 8 10 4 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 12 0.24 TJ = 25°C 0.2 VGS = 4 V 0.16 0.12 VGS = 10 V 0.08 1 3 2 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 1000000 1.9 ID = 2.6 A VGS = 12 V 1.7 IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 1. On−Region Characteristics 6 1.5 1.3 1.1 0.9 100000 TJ = 150°C TJ = 100°C 10000 0.7 0.5 −50 −25 0 25 50 75 100 125 1000 30 150 35 40 45 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 55 NIF9N05CL TJ = 25°C C, CAPACITANCE (pF) Ciss 400 VDS = 0 V VGS = 0 V Crss 300 200 Ciss 100 Coss Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 30 35 5 50 QT VDS 4 QGS 3 30 2 20 1 10 ID = 2.6 A TJ = 25°C 0 0 1 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2 4 3 QG, TOTAL GATE CHARGE (nC) 0 5 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation 100000 3 IS, SOURCE CURRENT (AMPS) VDD = 40 V ID = 2.6 A VGS = 10 V 10000 t, TIME (ns) 40 VGS QGD VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 500 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES td(off) tf 1000 tr td(on) 100 10 1 10 100 VGS = 0 V TJ = 25°C 2 1 0 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistance Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 5 1 NIF9N05CL PACKAGE DIMENSIONS SOT−223 CASE 318E−04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) H M K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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