NIF62514 Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. 6.0 AMPERES* 40 VOLTS CLAMPED RDS(on) = 90 m Drain Gate Input Features • • • • • • • • http://onsemi.com Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection Low RDS(on) IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection RG Overvoltage Protection MPWR ESD Protection Temperature Limit Current Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage Internally Clamped VDSS 40 Vdc SOT-223 CASE 318E STYLE 3 Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 M) VDGR 40 Vdc MARKING DIAGRAM VGS 16 Vdc Rating Gate-to-Source Voltage - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Pulsed (tp ≤ 10 s) Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) ID ID Internally Limited IDM PD W 3 DRAIN (Top View) RJT RJA RJA 14 114 72.3 °C/W Single Pulse Drain- to- Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH, RG = 25 ) EAS 300 mJ TJ, Tstg DRAIN SOURCE 1.1 1.73 8.93 Thermal Resistance - Junction-to-Tab Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Operating and Storage Temperature Range 4 2 62514 LWW Drain Current 1 GATE -55 to 150 1. Mounted onto min pad board. 2. Mounted onto 1″ pad board. 3. Mounted onto large heatsink. °C 62514 L WW = Specific Device Code = Location Code = Work Week ORDERING INFORMATION Device Package Shipping NIF62514T1 SOT-223 1000/Tape & Reel NIF62514T3 SOT-223 4000/Tape & Reel *Limited by the current limit circuit. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 3 1 Publication Order Number: NIF62514/D NIF62514 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) (VGS = 0 Vdc, ID = 250 Adc, TJ = 150°C) V(BR)DSS 42 42 46 45 50 50 Vdc - 0.5 2.0 2.0 10 - 50 550 100 1000 1.0 - 1.7 4.0 2.0 6.0 - 90 165 100 190 - 105 185 120 210 VSD - 1.05 - V OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) (VGS = -5.0 Vdc, VDS = 0 Vdc) IGSS Adc Adc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C) RDS(on) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C) RDS(on) Source-Drain Forward On Voltage (IS = 7 A, VGS = 0 V) Vdc mV/°C m m SWITCHING CHARACTERISTICS Turn-on Delay Time 10% Vin to 10% ID RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V td(on) - 4.0 8.0 s Turn-on Rise Time 10% ID to 90% ID RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V trise - 11 20 s Turn-of f Delay Time 90% Vin to 90% ID RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V td(off) - 32 50 s Turn-of f Fall Time 90% ID to 10% ID RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V tfall - 27 50 s Slew-Rate On RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V -dV DS/dton - 1.5 2.5 s Slew-Rate Off RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V dVDS/dtoff - 0.6 1.0 s SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit (VGS = 5.0 Vdc) (VGS = 5.0 Vdc, TJ = 150°C) ILIM 6.0 3.0 9.0 5.0 11 8.0 Adc Current Limit (VGS = 10 Vdc) (VGS = 10 Vdc, TJ = 150°C) ILIM 7.0 4.0 10.5 7.5 13 10 Adc Temperature Limit (Turn-of f) VGS = 5.0 Vdc TLIM(off) 150 175 200 °C Temperature Limit (Circuit Reset) VGS = 5.0 Vdc TLIM(on) 135 160 185 °C Temperature Limit (Turn-of f) VGS = 10 Vdc TLIM(off) 150 155 185 °C Temperature Limit (Circuit Reset) VGS = 10 Vdc TLIM(on) 130 140 170 °C ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro-Static Discharge Capability Human Body Model (HBM) ESD 4000 - - V Electro-Static Discharge Capability Machine Model (MM) ESD 400 - - V 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. http://onsemi.com 2 NIF62514 TYPICAL ELECTRICAL CHARACTERISTICS 8 12 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) TJ = 150°C VGS = 10 V 10 7V 6V 8 5V 4V 6 4 3V 2 7 VGS = 10 V 6 0 2 1 4 3 4 4V 3 3V 2 1 0 6 5 1 0 5 4 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Output Characteristics Figure 2. Output Characteristics 12 VGS = 10 V ID, DRAIN CURRENT (AMPS) 12 7V 6V 10 5V 8 4V 6 TJ = -40°C 4 2 3V VDS = 5 V TJ = -40°C 10 8 6 TJ = 25°C 4 TJ = 150°C 2 0 0 0 2 1 4 3 0 6 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (m) VGS = 10 V ID = 1.4 A 200 175 150 Maximum 125 100 75 Typical 50 25 0 -50 -25 0 25 50 75 100 1 1.5 2 2.5 3 3.5 4 4.5 5 Figure 4. Transfer Characteristics 250 225 0.5 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) Figure 3. Output Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (m) 3 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 14 ID, DRAIN CURRENT (AMPS) 6V 5V TJ = 25°C 0 7V 5 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Drain-to-Source Resistance versus Junction Temperature 250 225 VGS = 5 V ID = 1.4 A 200 175 Maximum 150 125 100 Typical 75 50 25 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Drain-to-Source Resistance versus Junction Temperature http://onsemi.com 3 2.50 4 GATE THRESHOLD VOLTAGE (V) IDSS, DRAIN-TO-SOURCE LEAKAGE CURRENT (A) NIF62514 VDS = 32 V 3 2 1 Typical 0 -50 -25 0 25 50 75 100 125 ID = 150 A 2.25 2.00 VTH + 4 Sigma VTH 1.75 1.50 VTH - 4 Sigma 1.25 1.00 0.75 0.50 0.25 0 -50 -30 150 -10 30 10 50 70 90 110 130 150 TJ, JUNCTION TEMPERATURE (°C) TEMPERATURE (°C) Figure 7. Drain-to-Source Resistance versus Junction Temperature Figure 8. Gate Threshold Voltage versus Temperature 12 DRAIN CURRENT (AMPS) Current Limit 10 VGS = 10 V Temperature Limit 8 6 VGS = 5 V 4 2 0 0 1 2 3 4 5 TIME (ms) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 9. Short-circuit Response 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 P(pk) 0.02 1 0.01 t1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.1 0.00001 0.0001 0.001 0.01 t,TIME (S) 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TA = P(pk) RJA(t) RJC R(t) for t ≤ 0.02 s 1 10 Figure 10. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on minimum pad area) http://onsemi.com 4 NIF62514 PACKAGE DIMENSIONS SOT-223 CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) H M K http://onsemi.com 5 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NIF62514 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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