LS103A, LS103B, LS103C Datasheet

LS103A, LS103B, LS103C
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• Integrated
discharge
protection
ring
against
static
• Low capacitance
• Low leakage current
• Low forward voltage drop
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
APPLICATIONS
Cathode band color: black
• HF-detector
Packaging codes/options:
• Protection circuit
GS18/10K per 13" reel (8 mm tape), 10K/box
• Small battery charger
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
• AC-DC/DC-DC converter for notebooks
PARTS TABLE
PART
TYPE DIFFERENTATION
ORDERING CODE
INTERNAL CONSTRUCTION
REMARKS
LS103A
VR = 40 V
LS103A-GS18 or LS103A-GS08
Single diode
Tape and reel
LS103B
VR = 30 V
LS103B-GS18 or LS103B-GS08
Single diode
Tape and reel
LS103C
VR = 20 V
LS103C-GS18 or LS103C-GS08
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Peak forward surge current
PART
SYMBOL
VALUE
UNIT
LS103A
VR
40
V
LS103B
VR
30
V
LS103C
VR
20
V
IFSM
15
A
Ptot
400
mW
tp = 300 μs, square pulse
Power dissipation
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Rev. 1.5, 09-May-12
TEST CONDITION
SYMBOL
VALUE
UNIT
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
250
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Document Number: 85631
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LS103A, LS103B, LS103C
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse breakdown voltage
SYMBOL
SYMBOL
MIN.
LS103A
V(BR)
40
V
LS103B
V(BR)
30
V
LS103C
V(BR)
20
VR = 30 V
LS103A
IR
5
μA
VR = 20 V
LS103B
IR
5
μA
VR = 10 V
LS103C
IR = 10 μA
Leakage current
IF = 20 mA
Forward voltage drop
Diode capacitance
Reverse recovery time
TYP.
MAX.
UNIT
V
IR
5
μA
VF
370
mV
600
mV
IF = 200 mA
VF
VR = 0 V, f = 1 MHz
CD
50
pF
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
10
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
10 000
IR - Reverse Current (µA)
IF - Forward Current (mA)
100
10
1
0.1
0.01
1000
100
10
1
0.001
0
0 100 200 300 400 500 600 700 800 900 1000
20
16767
VF - Forward Voltage (mV)
16765
Fig. 1 - Forward Current vs. Forward Voltage
40
60
80
100
120
140
160
Tj - Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
5
30
CD - Diode Capacitance (pF)
IF - Forward Current (A)
f = 1 MHz
4
3
2
1
25
20
15
10
5
0
0
0.0
16766
0.5
1.0
1.5
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.5, 09-May-12
0
2.0
16768
5
10
15
20
25
30
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Document Number: 85631
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LS103A, LS103B, LS103C
www.vishay.com
Vishay Semiconductors
Itot - Typ. Non Repetitve
Forward Surge Current (A)
25
20
15
10
5
0
0.1
16769
1.0
10.0
tP - Pulse width (ms)
Fig. 5 - Typical Non-Repetitive Forward Surge Current vs.
Pulse Width
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80
12071
Rev. 1.5, 09-May-12
Document Number: 85631
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000