LS103A / 103B / 103C VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications 9612009 HF-Detector Protection circuit Small battery charger AC-DC / DC-DC converters Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks LS103A VR = 40 V, VF @ IF 20 mA max. 0.37 V LS103A-GS18 or LS103A-GS08 Tape and Reel LS103B VR = 30 V, VF @ IF 20 mA max. 0.37 V LS103B-GS18 or LS103B-GS08 Tape and Reel LS103C VR = 20 V, VF @ IF 20 mA max. 0.37 V LS103C-GS18 or LS103C-GS08 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Part Symbol Value Unit LS103A VR 40 V LS103B VR 30 V LS103C VR 20 V Peak forward surge current tp = 300 µs, square pulse IFSM 15 A Power dissipation l = 4 mm, TL = constant Ptot 400 mW Document Number 85631 Rev. 1.2, 22-Apr-04 www.vishay.com 1 LS103A / 103B / 103C VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 250 K/W Tj 125 °C Tstg - 65 to + 150 °C l = 4mm, TL = constant Junction ambient Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 10 µA Forward voltage drop Symbol Min V(BR)R 40 Typ. Max Unit V V LS103B V(BR)R 30 LS103C V(BR)R 20 LS103A IR 5 µA VR = 20 V LS103B IR 5 µA VR = 10 V LS103C IR 5 µA VF 0.37 V VR = 30 V Leakage current Part LS103A IF = 20 mA V IF = 200 mA VF Diode capacitance VR = 0 V, f = 1 MHz CD 50 0.6 pF V Reverse recovery time IF = IR = 50 to 200 mA, recover to 0.1 IR trr 10 ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1000 1000.000 5 – Forward Current (A) 10 10.000 1 1.000 0.100 0.1 F 0.010 0.01 I I F – Forward Current ( mA) 100 100.000 4 3 2 1 0.001 0 0 0.0 100 200 300 400 500 600 700 800 900 1000 16765 V F – Forward Voltage ( mV ) 16766 Fig. 1 Forward Current vs. Forward Voltage www.vishay.com 2 0.5 1.0 1.5 2.0 V F – Forward Voltage ( V ) Fig. 2 Forward Current vs. Forward Voltage Document Number 85631 Rev. 1.2, 22-Apr-04 LS103A / 103B / 103C VISHAY Vishay Semiconductors I R – Reverse Current (A ) 10000 1000 100 10 1 0 20 40 60 80 100 120 140 160 Tj – Junction Temperature ( °C ) 16767 Fig. 3 Reverse Current vs. Junction Temperature CD – Diode Capacitance ( pF ) 30 f=1MHz 25 20 15 10 5 0 0 5 10 15 20 25 30 V R – Reverse Voltage ( V ) 16768 Itot–Typ. Non Repetitve Forward Surge Current (A) Fig. 4 Diode Capacitance vs. Reverse Voltage 25 20 15 10 5 0 0.1 16769 1.0 10.0 tp – Pulse width ( ms ) Fig. 5 Typ. Non Repetitive Forward Surge Current vs. Pulse width Document Number 85631 Rev. 1.2, 22-Apr-04 www.vishay.com 3 LS103A / 103B / 103C VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 1.5 ± 0.1 (0.06 ± 0.004) ss G la 1. 7 (0 .0 7 ) Cathode indification Glass > R 3 (R 0.12) 0.47 max. (0.02) 3.5 ± 0.2 (0.14 ± 0.008) Mounting Pad Layout 2.50 (0.098) max ISO Method E Glass case Quadro Melf / SOD 80 JEDEC DO 213 AA 5 (0.197) ref 2 (0.079) min 1.25 (0.049) min 96 12071 www.vishay.com 4 Document Number 85631 Rev. 1.2, 22-Apr-04 LS103A / 103B / 103C VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85631 Rev. 1.2, 22-Apr-04 www.vishay.com 5