Si7401DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET® Power MOSFETS: 1.8-V Rated • New PowerPAK® Package – Low Thermal Resistance, RthJC – Low 1.07-mm Profile Pb-free Available RoHS* COMPLIANT APPLICATIONS • Load/Power Switching In Cell Phones and Pagers • PA Switch for Cellular Devices • Battery Operated Systems PowerPAK 1212-8 S S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D D 5 P-Channel MOSFET Bottom View Ordering Information: Si7401DN-T1 Si7401DN-T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage TA = 25 °C TA = 85 °C Continuous Drain Current (TJ = 150 °C)a ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 85 °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range PD 10 secs Steady State – 20 ±8 V – 11 – 8.2 – 7.3 – 5.2 – 30 – 3.2 3.8 2.0 TJ, Tstg – 1.3 1.5 0.8 – 55 to 150 260 b,c Soldering Recommendations Unit A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 sec Steady State Steady State RthJA Typical 26 65 1.9 Maximum 33 81 2.4 Unit °C/W Maximum Junction-to-Case RthJC Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71423 S-51210–Rev. B, 27-Jun-05 www.vishay.com 1 Si7401DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min Typ Gate Threshold Voltage – 0.45 Max Unit Static VGS(th) VDS = VGS, ID = – 2 mA – 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA IDSS VDS = – 20 V, VGS = 0 V –1 Zero Gate Voltage Drain Current VDS = – 20 V, VGS = 0 V, TJ = 85 °C –5 On-State Drain Currenta ID(on) VDS ≤ – 5 V, VGS = – 4.5 V VGS = – 4.5 V, ID = – 11 A 0.017 0.021 rDS(on) VGS = – 2.5 V, ID = – 9.8 A 0.022 0.028 VGS = – 1.8 V, ID = – 2 A 0.027 0.034 Drain-Source On-State Resistancea Diode Forward Voltage a – 30 A gfs VDS = – 15 V, ID = – 11 A 31 VSD IS = – 3.2 A, VGS = 0 V – 0.8 – 1.2 29 44 Forward Transconductancea µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = – 10 V, VGS = – 4.5 V, ID = – 11 A 23 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 5.2 tr Turn-Off DelayTime 5.9 35 VDD = – 10 V, RL = 10 Ω ID ≅ – 1 A, VGEN = – 4.5 V, RG = 6 Ω 45 70 130 195 95 140 IF = – 3.2 A, di/dt = 100 A/µs 30 60 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 30 30 VGS = 5 thru 2 V 25 20 I D – Drain Current (A) I D – Drain Current (A) 25 15 1.5 V 10 5 20 15 10 TC = 125 °C 5 25 °C – 55 °C 1V 0 0 1 2 3 VDS – Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71423 S-51210–Rev. B, 27-Jun-05 Si7401DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.06 5000 4000 0.04 C – Capacitance (pF) r DS(on) – On-Resistance (Ω ) 0.05 VGS = 1.8 V 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V Ciss 3000 2000 1000 0.01 0.00 Coss Crss 0 0 5 10 15 20 25 30 0 4 ID – Drain Current (A) 8 16 20 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VDS = 10 V ID = 11 A 4 3 2 1 7 14 21 28 1.2 1.0 0.8 0.6 - 50 0 0 VGS = 4.5 V ID = 11 A 1.4 rD S(on) – On–Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 12 35 - 25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.06 30 rDS(on) – On–Resistance (Ω) I S – Source Current (A) 0.05 TJ = 150 °C 10 TJ = 25 °C ID = 11 A 0.04 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71423 S-51210–Rev. B, 27-Jun-05 1.2 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7401DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.4 50 ID = 2 mA 40 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 TJ – Temperature (°C) 125 150 0 0.01 Threshold Voltage 0.1 1 10 Time (sec) 100 600 Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 4. Surface Mounted 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71423. www.vishay.com 4 Document Number: 71423 S-51210–Rev. B, 27-Jun-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1