Si7902EDN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 8.3 0.030 at VGS = 3.7 V 8.0 0.043 at VGS = 2.5 V 6.7 • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • 3000–V ESD Protection Pb-free Available RoHS* COMPLIANT APPLICATIONS • Protection Switch for 1–2–Li–ion/LiP Batteries PowerPAK 1212-8 D S1 3.30 mm D 3.30 mm 1 G1 2 S2 3 G2 1.8 kΩ 4 1.8 kΩ G1 D 8 G2 D 7 D 6 D 5 Bottom View S1 S2 N-Channel Ordering Information: Si7902EDN-T1 N-Channel Si7902EDN–T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage TA = 25 °C TA = 85 °C Continuous Drain Current (TJ = 150 °C)a ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 85 °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range PD 10 secs Steady State 30 ± 12 V 8.3 6.0 5.6 4.0 40 2.7 3.2 1.7 TJ, Tstg 1.3 1.5 0.79 – 55 to 150 260 b,c Soldering Recommendations Unit A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 sec Steady State Steady State RthJA Typical 30 65 1.9 Maximum 38 82 2.4 Unit °C/W Maximum Junction-to-Case (Drain) RthJC Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71801 S-51210–Rev. B, 27-Jun-05 www.vishay.com 1 Si7902EDN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Gate Threshold Voltage VGS(th) Test Condition Min VDS = VGS, ID = 250 µA 0.60 Typ Max Unit Static V ±1 µA VDS = 0 V, VGS = ± 12 V ±10 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C 20 IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage 1.5 VDS = 0 V, VGS = ± 4.5 V a VDS ≥ 5 V, VGS = 4.5 V 30 A VGS = 4.5 V, ID = 8.3 A 0.023 0.028 VGS = 3.7 V, ID = 8.0 A 0.025 0.030 VGS = 2.5 V, ID = 3.0 A 0.035 0.043 gfs VDS = 15 V, ID = 8.3 A 26 VSD IS = 2.7 A, VGS = 0 V 0.75 1.2 10 15 VDS = 15 V, VGS = 4.5 V, ID = 8.3 A 2.3 rDS(on) µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs nC Gate-Drain Charge Qgd 2.4 Turn-On Delay Time td(on) 0.9 1.5 1.5 2.5 2.5 4.0 2.5 4.0 Rise Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω tr Turn-Off DelayTime td(off) Fall Time tf µs Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.8 1000 I GSS – Gate Current ( μA) I GSS – Gate Current (mA) 100 0.6 0.4 0.2 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.0 0.001 0 3 6 9 12 VGS – Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage www.vishay.com 2 15 0 3 6 9 12 15 VGS – Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Document Number: 71801 S-51210–Rev. B, 27-Jun-05 Si7902EDN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 30 30 VGS = 5 thru 2 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 2.5 V 18 12 2V 6 18 12 TC = 125 °C 6 25 °C – 55 °C 1.5 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS – Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 5 V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance (Ω ) 1.0 0.06 0.04 VGS = 2.5 V VGS = 3.7 V 0.02 VGS = 4.5 V VDS = 15 V ID = 8.3 A 4 3 2 1 0.00 0 0 6 12 18 24 30 0 2 4 6 8 ID – Drain Current (A) Qg – Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge 10 1.8 VGS = 4.5 V ID = 8.3 A rDS(on) – On–Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 71801 S-51210–Rev. B, 27-Jun-05 www.vishay.com 3 Si7902EDN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.08 30 10 r DS(on) – On-Resistance (Ω) I S – Source Current (A) ID = 3 A TJ = 150 °C TJ = 25 °C 1 0.06 ID = 8.3 A 0.04 0.02 0.00 0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 ID = 250 µA 40 Power (W) V GS(th) Variance (V) 0.2 - 0.0 - 0.2 30 20 - 0.4 10 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 Time (sec) TJ – Temperature (°C) Threshold Voltage 100 600 Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71801 S-51210–Rev. B, 27-Jun-05 Si7902EDN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71801. Document Number: 71801 S-51210–Rev. B, 27-Jun-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1