Si7810DN Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.062 at VGS = 10 V 5.4 0.084 at VGS = 6 V 4.6 • • • • Halogen-free Option Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® 1212-8 Package with Low 1.07 mm Profile • PWM Optimized RoHS COMPLIANT APPLICATIONS • Primary Side Switch • In-Rush Current Limiter PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy (Duty Cycle 1 %) TA = 25 °C TA = 70 °C L = 0.1 mH TA = 25 °C Maximum Power Dissipationa TA = 70 °C Operating Junction and Storage Temperature Range ID IDM IS IAS EAS PD 10 s Steady State 100 ± 20 Unit V 5.4 4.3 3.4 2.8 A 1.3 A 20 3.2 19 18 mJ 3.8 2.0 TJ, Tstg 1.5 0.8 – 55 to 150 260 b,c Soldering Recommendations W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 s Steady State Steady State RthJA Typical 26 65 1.9 Maximum 33 81 2.4 Unit °C/W Maximum Junction-to-Case (Drain) RthJC Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 70689 S-81544-Rev. C, 07-Jul-08 www.vishay.com 1 Si7810DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 2 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea 4.5 ± 100 µA 20 A VGS = 10 V, ID = 5.4 A 0.052 0.062 VGS = 6 V, ID = 4.6 A 0.070 0.084 gfs VDS = 15 V, ID = 5.4 A 12 VSD IS = 3.2 A, VGS = 0 V 0.78 1.2 13.5 17 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.6 Turn-On Delay Time td(on) 10 15 15 25 VDS = 50 V, VGS = 10 V, ID = 5.4 A VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Rise Time td(off) Turn-Off DelayTime Fall Time tf Source-Drain Reverse Recovery Time trr nC 3 IF = 3.2 A, dI/dt = 100 A/µs 20 30 15 25 45 90 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 20 6V VGS = 10 thru 7 V 16 ID - Drain Current (A) I D - Drain Current (A) 16 12 8 5V 4 12 8 TC = 125 °C 4 25 °C - 55 °C 4V 0 0 0 www.vishay.com 2 1 2 3 4 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 7 Document Number: 70689 S-81544-Rev. C, 07-Jul-08 Si7810DN Vishay Siliconix TA = 25°C, unless otherwise noted 0.20 1000 0.16 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 0.12 VGS = 6 V 0.08 VGS = 10 V Ciss 600 400 Coss 200 0.04 0.00 Crss 0 0 4 8 12 16 20 0 20 ID - Drain Current (A) 60 80 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.2 10 2.0 VDS = 50 V ID = 5.4 A VGS = 10 V ID = 5.4 A 1.8 6 4 2 1.6 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 40 1.4 1.2 1.0 0.8 0.6 0.4 - 50 0 0 2 4 6 8 10 12 14 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.16 20 TJ = 150 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.12 ID = 5.4 A 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 70689 S-81544-Rev. C, 07-Jul-08 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7810DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted 0.6 50 0.4 ID = 250 µA 40 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 30 20 - 0.6 - 0.8 10 - 1.0 - 1.2 - 50 - 25 0 25 50 75 TJ - Temperature (°C) 100 125 150 0 0.01 0.1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = P DMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70689. www.vishay.com 4 Document Number: 70689 S-81544-Rev. C, 07-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1