Si7810DN Datasheet

Si7810DN
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
ID (A)
0.062 at VGS = 10 V
5.4
0.084 at VGS = 6 V
4.6
•
•
•
•
Halogen-free Option Available
TrenchFET® Power MOSFET
New Low Thermal Resistance
PowerPAK® 1212-8 Package with Low
1.07 mm Profile
• PWM Optimized
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch
• In-Rush Current Limiter
PowerPAK 1212-8
S
3.30 mm
3.30 mm
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
S
Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy (Duty Cycle 1 %)
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TA = 25 °C
Maximum Power Dissipationa
TA = 70 °C
Operating Junction and Storage Temperature Range
ID
IDM
IS
IAS
EAS
PD
10 s
Steady State
100
± 20
Unit
V
5.4
4.3
3.4
2.8
A
1.3
A
20
3.2
19
18
mJ
3.8
2.0
TJ, Tstg
1.5
0.8
– 55 to 150
260
b,c
Soldering Recommendations
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
°C/W
Maximum Junction-to-Case (Drain)
RthJC
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
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Si7810DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
2
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
RDS(on)
Forward Transconductancea
4.5
± 100
µA
20
A
VGS = 10 V, ID = 5.4 A
0.052
0.062
VGS = 6 V, ID = 4.6 A
0.070
0.084
gfs
VDS = 15 V, ID = 5.4 A
12
VSD
IS = 3.2 A, VGS = 0 V
0.78
1.2
13.5
17
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
4.6
Turn-On Delay Time
td(on)
10
15
15
25
VDS = 50 V, VGS = 10 V, ID = 5.4 A
VDD = 50 V, RL = 50 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off DelayTime
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
3
IF = 3.2 A, dI/dt = 100 A/µs
20
30
15
25
45
90
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
20
20
6V
VGS = 10 thru 7 V
16
ID - Drain Current (A)
I D - Drain Current (A)
16
12
8
5V
4
12
8
TC = 125 °C
4
25 °C
- 55 °C
4V
0
0
0
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2
1
2
3
4
5
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
7
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
Si7810DN
Vishay Siliconix
TA = 25°C, unless otherwise noted
0.20
1000
0.16
800
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS
0.12
VGS = 6 V
0.08
VGS = 10 V
Ciss
600
400
Coss
200
0.04
0.00
Crss
0
0
4
8
12
16
20
0
20
ID - Drain Current (A)
60
80
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
2.2
10
2.0
VDS = 50 V
ID = 5.4 A
VGS = 10 V
ID = 5.4 A
1.8
6
4
2
1.6
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
40
1.4
1.2
1.0
0.8
0.6
0.4
- 50
0
0
2
4
6
8
10
12
14
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.16
20
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.0
0.12
ID = 5.4 A
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted
0.6
50
0.4
ID = 250 µA
40
0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
- 0.4
30
20
- 0.6
- 0.8
10
- 1.0
- 1.2
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
100
125
150
0
0.01
0.1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = P DMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70689.
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Document Number: 70689
S-81544-Rev. C, 07-Jul-08
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Document Number: 91000
Revision: 18-Jul-08
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