Si7483ADP Datasheet

Si7483ADP
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.0057 at VGS = - 10 V
- 24
0.0095 at VGS = - 4.5 V
- 17
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETS
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg tested
APPLICATIONS
PowerPAK SO-8
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
6.15 mm
5.15 mm
1
S
2
S
3
G
S
4
D
8
D
7
D
G
6
D
5
Bottom View
D
Ordering Information: Si7483ADP-T1-E3 (Lead (Pb)-free)
Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Symbol
VDS
VGS
TA = 25 °C
TA = 70 °C
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
10 s
- 24
- 19
- 4.5
5.4
3.4
Steady State
- 30
± 20
- 14
- 11
- 60
- 1.6
1.9
1.2
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73025
S09-0270-Rev. C, 16-Feb-09
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1
Si7483ADP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
- 3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
IDSS
VDS = - 30 V, VGS = 0 V
-1
Zero Gate Voltage Drain Current
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
- 10
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Voltagea
- 30
A
VGS = - 10 V, ID = - 24 A
0.0047
0.0057
VGS = - 4.5 V, ID = - 17 A
0.0075
0.0095
gfs
VDS = - 15 V, ID = - 24 A
70
VSD
IS = - 2.9 A, VGS = 0 V
- 0.73
- 1.1
120
180
RDS(on)
Forward Transconductancea
Diode Forward
VDS = - 5 V, VGS = - 10 V
µA
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
VDS = - 15 V, VGS = - 10 V, ID = - 24 A
18
Rg
Turn-On Delay Time
1.6
td(on)
Rise Time
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
33
IF = - 2.9 A, dI/dt = 100 A/µs
3.2
4.8
22
35
33
50
210
320
130
200
70
130
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
60
VGS = 10 V thru 4 V
50
40
I D - Drain Current (A)
I D - Drain Current (A)
50
30
20
3V
10
40
30
20
TC = 125 °C
10
25 °C
- 55 °C
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
4.0
Document Number: 73025
S09-0270-Rev. C, 16-Feb-09
Si7483ADP
Vishay Siliconix
0.015
8200
0.012
6560
0.009
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 4.5 V
0.006
VGS = 10 V
Ciss
4920
3280
Coss
1640
0.003
Crss
0
0.000
0
10
20
30
40
0
50
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.6
VDS = 15 V
ID = 24 A
8
VGS = 10 V
ID = 24 A
1.4
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Drain Current
10
6
4
1.2
1.0
0.8
2
0.6
- 50
0
0
20
40
60
80
100
120
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.020
R DS(on) - On-Resistance (Ω)
10
TJ = 150 °C
TJ = 25 °C
1
0.016
0.012
ID = 24 A
0.008
0.004
0.000
0.1
0.00
- 25
Qg - Total Gate Charge (nC)
50
I S - Source Current (A)
5
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73025
S09-0270-Rev. C, 16-Feb-09
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7483ADP
Vishay Siliconix
0.8
200
0.6
160
ID = 250 µA
0.4
120
Power (W)
V GS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
80
0.0
40
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
1 ms
Limited by
RDS(on)*
I D - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
TC = 25 °C
Single Pulse
0.1
0.01
0.1
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 50 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73025
S09-0270-Rev. C, 16-Feb-09
Si7483ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73025.
Document Number: 73025
S09-0270-Rev. C, 16-Feb-09
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Revision: 02-Oct-12
1
Document Number: 91000