Si3434DV Datasheet

Si3434DV
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.034 at VGS = 4.5 V
6.1
0.050 at VGS = 2.5 V
5.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 2.5 V Rating for 30 V N-Channel
• Low RDS(on) for Footprint Area
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Li-lon Battery Protection
TSOP-6
Top View
3 mm
1
6
2
5
3
4
(1, 2, 5, 6) D
(3) G
2.85 mm
(4) S
Ordering Information: Si3434DV-T1-E3 (Lead (Pb)-free)
Si3434DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
6.1
4.6
3.6
30
1.7
1.0
2.0
1.14
1.3
0.73
TJ, Tstg
Operating Junction and Storage Temperature Range
V
4.9
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
62.5
90
110
25
30
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71610
S09-0766-Rev. B, 04-May-09
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Si3434DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.6
Typ.
Max.
Unit
± 100
nA
Static
VGS(th)
VDS = VGS, ID = 1 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
V
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 70 °C
5
VDS ≥ 5 V, VGS = 4.5 V
RDS(on)
µA
30
A
VGS = 4.5 V, ID = 6.1 A
0.028
0.034
VGS = 2.5 V, ID = 2 A
0.042
0.050
gfs
VDS = 10 V, ID = 6.1 A
20
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
8
12
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.6
Turn-On Delay Time
td(on)
21
VDS = 15 V, VGS = 4.5 V, ID = 6.1 A
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
1.9
IF = 1.7 A, dI/dt = 100 A/µs
40
45
90
40
80
30
60
40
80
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
3V
VGS = 10 V thru 3.5 V
TC = - 55 °C
25 °C
24
125 °C
I D - Drain Current (A)
I D - Drain Current (A)
24
18
2.5 V
12
6
18
12
6
2V
1.5 V
0
0
0
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2
1
2
3
4
5
0
1
2
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4
Document Number: 71610
S09-0766-Rev. B, 04-May-09
Si3434DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1200
1000
0.08
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.10
0.06
VGS = 2.5 V
0.04
VGS = 4.5 V
Ciss
800
600
400
Coss
0.02
200
Crss
0.00
0
0
5
10
15
20
25
30
0
10
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.6
VGS = 4.5 V
ID = 6.1 A
VDS = 15 V
ID = 6.1 A
1.4
R DS(on) - On-Resistance
(Normalized)
4
3
2
1.2
1.0
0.8
1
0.6
- 50
0
0
2
4
6
8
10
- 25
0
Qg - Total Gate Charge (nC)
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.10
R DS(on) - On-Resistance (Ω)
30
10
TJ = 150 °C
TJ = 25 °C
1
0.0
25
TJ - Junction Temperature (°C)
Gate Charge
I S - Source Current (A)
15
On-Resistance vs. Drain Current
5
VGS - Gate-to-Source Voltage (V)
5
0.08
ID = 6.1 A
ID = 2 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71610
S09-0766-Rev. B, 04-May-09
5
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Si3434DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30
50
0.15
40
0.00
Power (W)
VGS(th) Variance (V)
ID = 1 mA
- 0.15
30
20
- 0.30
10
- 0.45
- 0.60
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
10 -3
10 -2
10 -1
1
Time (s)
10
100
600
Single Pulse Power
Threshold Voltage
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
10- 3
4. Surface Mounted
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71610.
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Document Number: 71610
S09-0766-Rev. B, 04-May-09
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Revision: 02-Oct-12
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Document Number: 91000