Si3434DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 2.5 V Rating for 30 V N-Channel • Low RDS(on) for Footprint Area • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Li-lon Battery Protection TSOP-6 Top View 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3434DV-T1-E3 (Lead (Pb)-free) Si3434DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 6.1 4.6 3.6 30 1.7 1.0 2.0 1.14 1.3 0.73 TJ, Tstg Operating Junction and Storage Temperature Range V 4.9 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 40 62.5 90 110 25 30 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71610 S09-0766-Rev. B, 04-May-09 www.vishay.com 1 Si3434DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit ± 100 nA Static VGS(th) VDS = VGS, ID = 1 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70 °C 5 VDS ≥ 5 V, VGS = 4.5 V RDS(on) µA 30 A VGS = 4.5 V, ID = 6.1 A 0.028 0.034 VGS = 2.5 V, ID = 2 A 0.042 0.050 gfs VDS = 10 V, ID = 6.1 A 20 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 8 12 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.6 Turn-On Delay Time td(on) 21 VDS = 15 V, VGS = 4.5 V, ID = 6.1 A VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.9 IF = 1.7 A, dI/dt = 100 A/µs 40 45 90 40 80 30 60 40 80 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 3V VGS = 10 V thru 3.5 V TC = - 55 °C 25 °C 24 125 °C I D - Drain Current (A) I D - Drain Current (A) 24 18 2.5 V 12 6 18 12 6 2V 1.5 V 0 0 0 www.vishay.com 2 1 2 3 4 5 0 1 2 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4 Document Number: 71610 S09-0766-Rev. B, 04-May-09 Si3434DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 1000 0.08 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.10 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 800 600 400 Coss 0.02 200 Crss 0.00 0 0 5 10 15 20 25 30 0 10 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VGS = 4.5 V ID = 6.1 A VDS = 15 V ID = 6.1 A 1.4 R DS(on) - On-Resistance (Normalized) 4 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 2 4 6 8 10 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.10 R DS(on) - On-Resistance (Ω) 30 10 TJ = 150 °C TJ = 25 °C 1 0.0 25 TJ - Junction Temperature (°C) Gate Charge I S - Source Current (A) 15 On-Resistance vs. Drain Current 5 VGS - Gate-to-Source Voltage (V) 5 0.08 ID = 6.1 A ID = 2 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71610 S09-0766-Rev. B, 04-May-09 5 www.vishay.com 3 Si3434DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 50 0.15 40 0.00 Power (W) VGS(th) Variance (V) ID = 1 mA - 0.15 30 20 - 0.30 10 - 0.45 - 0.60 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10 -3 10 -2 10 -1 1 Time (s) 10 100 600 Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71610. www.vishay.com 4 Document Number: 71610 S09-0766-Rev. B, 04-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000