Si3483DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3483DV-T1-E3 (Lead (Pb)-free) Si3483DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 4.7 - 4.9 - 3.7 - 25 - 1.7 - 0.95 2.0 1.14 1.3 0.73 TJ, Tstg Operating Junction and Storage Temperature Range V - 6.2 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72078 S09-2276-Rev. C, 02-Nov-09 www.vishay.com 1 Si3483DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 10 V RDS(on) Forward Transconductancea -3 ± 100 µA - 25 A VGS = - 10 V, ID = - 6.2 A 0.028 0.035 VGS = - 4.5 V, ID = - 5.0 A 0.042 0.053 gfs VDS = - 15 V, ID = - 6.2A 14 VSD IS = - 1.7 A, VGS = 0 V - 0.8 - 1.2 23 35 VDS = - 15 V, VGS = - 10 V, ID = - 6.2 A 3.6 Ω S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 6 IF = - 1.7 A, dI/dt = 100 A/µs 10 15 10 15 71 110 45 70 45 70 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 4V VGS = 10 V thru 5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 3V 5 15 10 5 TC = 125 °C 25 °C - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 72078 S09-2276-Rev. C, 02-Nov-09 Si3483DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 1600 1200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1400 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V Ciss 1000 800 600 Coss 400 0.02 Crss 200 0.00 0 0 5 10 15 20 25 0 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VGS = 10 V ID = 6.2 A VDS = 15 V ID = 6.2 A 1.4 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 On-Resistance vs. Drain Current 10 6 4 1.2 1.0 0.8 2 0.6 - 50 0 0 5 10 15 20 25 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 150 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 6 TJ = 150 °C 10 TJ = 25 °C 0.08 ID = 2 A ID = 6.2 A 0.06 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72078 S09-2276-Rev. C, 02-Nov-09 10 www.vishay.com 3 Si3483DV Vishay Siliconix 0.6 50 0.4 40 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 - 0.2 30 20 10 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10 - 3 150 10 - 2 10 - 1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 Limited by RDS(on)* IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25 °C Single Pulse P(t) = 1 P(t) = 10 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72078 S09-2276-Rev. C, 02-Nov-09 Si3483DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72078. Document Number: 72078 S09-2276-Rev. 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