Si4364DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % Rg Tested APPLICATIONS • DC/DC Converters • Synchronous Rectifiers SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4364DY-T1-E3 (Lead (Pb)-free) Si4364DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C ID 10 s Steady State 30 a IS Continuous Source Current (Diode Conduction) Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 20 13 15 10 60 2.9 1.3 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range V ± 16 IDM Pulsed Drain Current (10 µs Pulse Width) Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 70680 S09-0221-Rev. E, 09-Feb-09 www.vishay.com 1 Si4364DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.8 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 10 V RDS(on) µA 30 A VGS = 10 V, ID = 20 A 0.0035 0.0045 VGS = 4.5 V, ID = 19 A 0.0043 0.0055 gfs VDS = 15 V, ID = 20 A 90 VSD IS = 2.9 A, VGS = 0 V 0.70 1.1 48 75 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 20 A 11 0.5 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 16 IF = 2.9 A, dI/dt = 100 A/µs 1.1 1.9 17 30 16 30 165 250 55 90 40 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 V thru 3 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 40 30 20 TC = 125 °C 10 25 °C 2V - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 Document Number: 70680 S09-0221-Rev. E, 09-Feb-09 Si4364DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.010 9000 0.008 7200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.006 VGS = 4.5 V 0.004 5400 3600 VGS = 10 V 1800 0.002 Coss Crss 0 0.000 0 10 20 30 40 0 50 6 12 30 Capacitance 6 1.6 VDS = 15 V ID = 20 A VGS = 10 V ID = 20 A 1.4 4 3 2 (Normalized) 5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 1.2 1.0 0.8 1 0 0 14 28 42 56 0.6 - 50 70 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.025 R DS(on) - On-Resistance ( Ω) 50 I S - Source Current (A) 18 TJ = 150 °C 10 TJ = 25 °C 1 0.020 0.015 0.010 ID = 20 A 0.005 0.000 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 70680 S09-0221-Rev. E, 09-Feb-09 10 www.vishay.com 3 Si4364DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 60 ID = 250 µA 50 0.0 40 Power (W) VGS(th) Variance (V) 0.2 - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10 - 2 10 - 1 1 10 100 600 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 67 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 t1 t2 10 - 3 10 - 2 4. Surface Mounted 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70680. www.vishay.com 4 Document Number: 70680 S09-0221-Rev. E, 09-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000