Si7882DP Datasheet

Si7882DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
12
RDS(on) (Ω)
ID (A)
0.0055 at VGS = 4.5 V
22
0.008 at VGS = 2.5 V
18
PowerPAK SO-8
RoHS*
COMPLIANT
• Point-of-Load Synchronous Rectifier
- 5 V or 3.3 V BUS Step Down
- Qg Optimized for 500 kHz Operation
• Synchronous Buck, Shoot-Thru Resistant
5.15 mm
1
Available
APPLICATIONS
S
6.15 mm
• Halogen-free available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• PWM Optimized for High Efficiency
• 100 % Rg Tested
S
2
S
3
G
D
4
D
8
D
7
D
6
D
G
5
Bottom View
Ordering Information: Si7882DP-T1
Si7882DP-T1-E3 (Lead (Pb)-free)
Si7882DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)a
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Energy
Avalanche Energy
L = 0.1 mH
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
Steady State
12
±8
PD
Unit
V
22
18
13
11
50
A
4.1
1.6
IAS
EAS
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
ID
10 s
12
7.2
mJ
5
3.2
1.9
1.2
- 55 to 150
b, c
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
20
55
2.0
Maximum
25
65
2.6
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71858
S-80439-Rev. G, 03-Mar-08
www.vishay.com
1
Si7882DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.6
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = 12 V, VGS = 0 V
1
VDS = 12 V, VGS = 0 V, TJ = 70 °C
5
VDS ≥ 5 V, VGS = 4.5 V
RDS(on)
Forward Transconductancea
1.4
± 100
µA
40
A
VGS = 4.5 V, ID = 17 A
0.0045
0.0055
VGS = 2.5 V, ID = 14 A
0.0065
0.008
gfs
VDS = 6 V, ID = 17 A
80
VSD
IS = 2.7 A, VGS = 0 V
0.70
1.1
21
30
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = 6 V, VGS = 4.5 V, ID = 17 A
3.5
0.8
28
VDD = 6 V, RL = 6 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
tr
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Ω
3.5
td(on)
Turn-On Delay Time
Rise Time
nC
4.6
IF = 2.7 A, di/dt = 100 A/µs
42
32
48
82
123
35
53
60
90
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 thru 2.5 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
2V
30
20
10
30
20
TC = 125 °C
10
25 °C
- 55 °C
1.5 V
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
0.0
0.5
1.0
1.5
2.0
2 .5
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71858
S-80439-Rev. G, 03-Mar-08
Si7882DP
Vishay Siliconix
25 °C, unless otherwise noted
0.015
4000
0.012
3200
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS
0.009
VGS = 2.5 V
0.006
VGS = 4.5 V
0.003
2400
Coss
1600
Crss
800
0.000
0
0
10
20
30
40
50
0
2
4
8
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
12
1.6
VDS = 6 V
ID = 17 A
VGS = 4.5 V
ID = 17 A
4
3
2
(Normalized)
1.4
R DS(on) - On-Resistance
5
1.2
1.0
0.8
1
0
0
5
10
15
20
25
0.6
- 50
30
- 25
0
50
75
100
125
150
On-Resistance vs. Junction Temperature
Gate Charge
50
R DS(on) - On-Resistance (Ω)
0.040
TJ = 150 °C
10
TJ = 25 °C
1
0.00
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
I S - Source Current (A)
6
On-Resistance vs. Drain Current
6
VGS - Gate-to-Source Voltage (V)
Ciss
0.032
0.024
0.016
ID = 17 A
0.008
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71858
S-80439-Rev. G, 03-Mar-08
5
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Si7882DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
200
160
0.0
120
Power (W)
V GS(th) Variance (V)
ID = 250 µA
0.2
- 0.2
- 0.4
80
40
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
TJ - Temperature (°C)
1
10
Time (s)
Threshold Voltage
Single Pulse Power
2
Normalized Effectiv e Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1 .Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 67 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71858.
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Document Number: 71858
S-80439-Rev. G, 03-Mar-08
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Revision: 02-Oct-12
1
Document Number: 91000