Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down - Qg Optimized for 500 kHz Operation • Synchronous Buck, Shoot-Thru Resistant 5.15 mm 1 Available APPLICATIONS S 6.15 mm • Halogen-free available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized for High Efficiency • 100 % Rg Tested S 2 S 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7882DP-T1 Si7882DP-T1-E3 (Lead (Pb)-free) Si7882DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C)a IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Energy Avalanche Energy L = 0.1 mH TA = 25 °C TA = 70 °C Maximum Power Dissipationa Steady State 12 ±8 PD Unit V 22 18 13 11 50 A 4.1 1.6 IAS EAS TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ID 10 s 12 7.2 mJ 5 3.2 1.9 1.2 - 55 to 150 b, c 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical 20 55 2.0 Maximum 25 65 2.6 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71858 S-80439-Rev. G, 03-Mar-08 www.vishay.com 1 Si7882DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 12 V, VGS = 0 V 1 VDS = 12 V, VGS = 0 V, TJ = 70 °C 5 VDS ≥ 5 V, VGS = 4.5 V RDS(on) Forward Transconductancea 1.4 ± 100 µA 40 A VGS = 4.5 V, ID = 17 A 0.0045 0.0055 VGS = 2.5 V, ID = 14 A 0.0065 0.008 gfs VDS = 6 V, ID = 17 A 80 VSD IS = 2.7 A, VGS = 0 V 0.70 1.1 21 30 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 6 V, VGS = 4.5 V, ID = 17 A 3.5 0.8 28 VDD = 6 V, RL = 6 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω tr td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 3.5 td(on) Turn-On Delay Time Rise Time nC 4.6 IF = 2.7 A, di/dt = 100 A/µs 42 32 48 82 123 35 53 60 90 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 thru 2.5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 2V 30 20 10 30 20 TC = 125 °C 10 25 °C - 55 °C 1.5 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2 .5 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71858 S-80439-Rev. G, 03-Mar-08 Si7882DP Vishay Siliconix 25 °C, unless otherwise noted 0.015 4000 0.012 3200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 0.009 VGS = 2.5 V 0.006 VGS = 4.5 V 0.003 2400 Coss 1600 Crss 800 0.000 0 0 10 20 30 40 50 0 2 4 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 12 1.6 VDS = 6 V ID = 17 A VGS = 4.5 V ID = 17 A 4 3 2 (Normalized) 1.4 R DS(on) - On-Resistance 5 1.2 1.0 0.8 1 0 0 5 10 15 20 25 0.6 - 50 30 - 25 0 50 75 100 125 150 On-Resistance vs. Junction Temperature Gate Charge 50 R DS(on) - On-Resistance (Ω) 0.040 TJ = 150 °C 10 TJ = 25 °C 1 0.00 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 6 On-Resistance vs. Drain Current 6 VGS - Gate-to-Source Voltage (V) Ciss 0.032 0.024 0.016 ID = 17 A 0.008 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71858 S-80439-Rev. G, 03-Mar-08 5 www.vishay.com 3 Si7882DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 200 160 0.0 120 Power (W) V GS(th) Variance (V) ID = 250 µA 0.2 - 0.2 - 0.4 80 40 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 TJ - Temperature (°C) 1 10 Time (s) Threshold Voltage Single Pulse Power 2 Normalized Effectiv e Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1 .Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 67 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71858. www.vishay.com 4 Document Number: 71858 S-80439-Rev. G, 03-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000