Si7884DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET® Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectifier S 6.15 mm 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7884DP-T1-E3 (Lead (Pb)-free) Si7884DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current TA = 25 °C TA = 70 °C ID L = 0.1 mH IDM IAS IS Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa PD TJ, Tstg Operating Junction and Storage Temperature Range 10 s Steady State 40 ± 20 12 10 50 30 1.7 20 16 4.7 5.2 3.3 1.9 1.2 - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State RthJA RthJC Typical 19 52 1.2 Maximum 24 65 1.8 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71855 S-80440-Rev. G, 03-Mar-08 www.vishay.com 1 Si7884DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage VDS ≥ 5 V, VGS = 10 V a µA 50 A VGS = 10 V, ID = 14 A 0.0055 0.007 VGS = 4.5 V, ID = 12 A 0.0075 0.0095 gfs VDS = 15 V, ID = 14 A 50 VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 18.5 28 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 20 V, VGS = 5 V, ID = 14 A 0.2 0.8 td(on) Turn-On Delay Time VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 6 7.5 IF = 2.8 A, di/dt = 100 A/µs Ω 1 15 30 10 20 50 100 20 40 30 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 3V 20 10 30 20 TC = 125 °C 10 25 °C - 55 °C 2V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71855 S-80440-Rev. G, 03-Mar-08 Si7884DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3000 2500 VGS = 4.5 V 0.008 VGS = 10 V 0.006 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.010 0.004 2000 1500 1000 0.002 Coss 500 0.000 Crss 0 0 10 20 30 40 50 0 8 I D - Drain Current (A) 16 40 Capacitance 2.0 10 VGS = 10 V ID = 14 A VDS = 20 V ID = 14 A 1.6 6 4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 32 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.2 0.8 0.4 2 0.0 - 50 0 0 7 14 21 28 35 - 25 0 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.020 50 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.0 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 24 ID = 14 A 0.016 0.012 0.008 0.004 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71855 S-80440-Rev. G, 03-Mar-08 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7884DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 100 0.4 80 ID = 250 µA Power (W) V GS(th) Variance (V) 0.2 0.0 - 0.2 60 40 - 0.4 - 0.6 20 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.1 0.01 TJ - Temperature (°C) 10 1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 55 °C 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 1 10 - 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71855. www.vishay.com 4 Document Number: 71855 S-80440-Rev. G, 03-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000