Si7860DP Datasheet

Si7860DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.008 at VGS = 10 V
18
0.011 at VGS = 4.5 V
15
PowerPAK SO-8
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• PWM Optimized for High Efficiency
• New Low Thermal Resistance
• PowerPAK® Package with Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
S
6.15 mm
• Buck Converter
- High Side or Low Side
• Synchronous Rectifier
- Secondary Rectifier
5.15 mm
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
5
G
Bottom View
S
Ordering Information: Si7860DP-T1
Si7860DP-T1-E3 (Lead (Pb)-free)
Si7860DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)a
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Continuous)
Avalanche Current
Single Pulse Avalanche Energy
a
L = 0.1 mH
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
ID
Steady State
30
± 20
11
8
± 50
18
15
4.1
PD
Unit
V
A
1.5
IAS
EAS
TJ, Tstg
Operating Junction and Storage Temperature Range
10 s
30
45
mJ
5
3.2
1.8
1.1
- 55 to 150
Soldering Recommendations (Peak Temperature)b,c
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
Symbol
a
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
20
56
1.8
Maximum
25
70
2.3
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71854
S09-0222-Rev. E, 09-Feb-09
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1
Si7860DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
1
VDS = 30 V, VGS = 0 V, TJ = 70 °C
5
40
A
VGS = 10 V, ID = 18 A
0.0066
0.008
VGS = 4.5 V, ID = 15 A
0.0090
0.011
gfs
VDS = 15 V, ID = 18 A
60
IS = 3 A, VGS = 0 V
0.70
1.1
13
18
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15 V, VGS = 4.5 V, ID = 18 A
0.5
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
S
V
nC
4.0
Rg
Rise Time
Ω
5
td(on)
Turn-On Delay Time
µA
VSD
Dynamicb
Total Gate Charge
Gate Resistance
V
nA
VDS = 30 V, VGS = 0 V
VDS ≥ 5 V, VGS = 10 V
RDS(on)
3.0
± 100
IF = 3 A, dI/dt = 100 A/µs
1.7
3.2
18
27
12
18
46
70
19
30
40
70
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
30
20
TC = 125 °C
3V
10
10
25 °C
- 55 °C
0
0
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2
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
4.0
Document Number: 71854
S09-0222-Rev. E, 09-Feb-09
Si7860DP
Vishay Siliconix
0.015
2500
0.012
2000
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 4.5 V
0.009
VGS = 10 V
0.006
Ciss
1500
1000
Coss
0.003
500
0.000
Crss
0
0
10
20
30
40
50
0
6
ID - Drain Current (A)
12
30
Capacitance
6
2.00
VDS = 15 V
ID = 16 A
5
VGS = 10 V
ID = 16 A
1.75
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
3
2
1
1.50
1.25
1.00
0.75
0
0
4
8
12
16
0.50
- 50
20
- 25
0
Gate Charge
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.040
RDS(on) - On-Resistance (Ω)
60
TJ = 150 °C
10
TJ = 25 °C
0.032
0.024
0.016
ID = 16 A
0.008
0.000
1
0.00
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
I S - Source Current (A)
18
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71854
S09-0222-Rev. E, 09-Feb-09
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7860DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
200
ID = 250 µA
160
Power (W)
V GS(th) Variance (V)
0.3
0.0
120
- 0.3
80
- 0.6
40
- 0.9
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.001
0.1
Time (s)
0.01
10
1
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 - 4
10 - 3
4. Surface Mounted
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (s)
10 - 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71854.
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Document Number: 71854
S09-0222-Rev. E, 09-Feb-09
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Revision: 02-Oct-12
1
Document Number: 91000