VISHAY BAW56-V

BAW56-V
Vishay Semiconductors
Small Signal Switching Diode, Dual
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common
anode
• This diode is also available in other
configurations including: a single with
type designation BAL99, a dual anode to
cathode with type designation BAV99,
and a dual common cathode with type designation
BAV70.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
2
3
1
1
2
3
17033
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAW56-V
Ordering code
Marking
Remarks
BAW56-V-GS18 or BAW56-V-GS08
JD
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
Power dissipation
1)
Value
Unit
VR = VRRM
70
V
IF
250
mA
tp = 1 μs
IFSM
2
A
tp = 1 ms
IFSM
1
A
tp = 1 s
IFSM
0.5
A
Ptot
3501)
mW
Forward continuous current
Non repetitive peak forward
current
Symbol
Device on fiberglass substrate, see layout
Document Number 85549
Rev. 1.8, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAW56-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
430
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
1)
Device on fiberglass substrate, see layout
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Max.
Unit
IF = 1 mA
VF
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1000
mV
IF = 150 mA
VF
1250
mV
VR = 70 V
IR
2.5
µA
VR = 70 V, Tj = 150 °C
IR
100
µA
VR = 25 V, Tj = 150 °C
IR
30
µA
VF = VR = 0, f = 1 MHz
CD
2
pF
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
6
ns
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Min.
Typ.
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IF - Forward Current (mA)
1000
100
Tj = 100 °C
10
25 °C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
Figure 1. Forward Current vs. Forward Voltage
www.vishay.com
2
22290
V F - Forward Voltage (V)
Figure 2. Peak forward current IFM = f (tp)
For technical questions within your region, please contact one of the following: Document Number 85549
[email protected], [email protected], [email protected]
Rev. 1.8, 12-Aug-10
BAW56-V
Vishay Semiconductors
Package Dimensions in millimeters (inches): SOT-23
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
o
0.5 (0.020)
0.45 (0.018)
0.9 (0.035)
1.15 (0.045)
8°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
1.43 (0.056)
1 (0.039)
0.9 (0.035)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Document Number 85549
Rev. 1.8, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
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Document Number: 91000