VISHAY 1N4148WS-V

1N4148WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• These diodes are also available in other
case styles including the DO-35 case
with the type designation 1N4148, the
MiniMELF case with the type designation
LL4148, and the SOT-23 case with the
type designation IMBD4148-V
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4148WS-V
Ordering code
Type Marking
Remarks
1N4148WS-V-GS18 or 1N4148WS-V-GS08
A2
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
75
V
VRRM
100
V
f ≥ 50 Hz
IF(AV)
1501)
mA
t < 1 s and Tj = 25 °C
IFSM
350
mA
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge forward current
Ptot
Power dissipation
200
1)
mW
Note:
1)
Valid provided that electrodes are kept at ambient temperature.
Document Number 85751
Rev. 1.8, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
1N4148WS-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
6501)
K/W
Thermal resistance junction to ambient air
Junction temperature
Tj
150
°C
Storage temperature
Tstg
- 65 to + 150
°C
Note:
1)
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Test condition
Symbol
Max.
Unit
IF = 10 mA
VF
Min.
Typ.
1000
mV
IF = 100 mA
VF
1200
mV
VR = 20 V
IR
25
nA
VR = 75 V
IR
5
µA
VR = 100 V
IR
100
µA
VR = 20 V, Tj = 150 °C
IR
50
µA
VF = VR = 0 V
CD
4
pF
Tested with 50 mA pulses,
tp = 0.1 µs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr
2.5
V
Reverse recovery time
IF = 10 mA, IR = 1 mA, VR = 6 V,
RL = 100 Ω
trr
4
ns
Rectification efficiency
f = 100 MHz, VRF = 2 V
ην
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
0.45
Rectification Efficiency Measurement Circuit
60 Ω
2 nF
VRF = 2 V
5 kΩ
VO
17436
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2
For technical questions within your region, please contact one of the following: Document Number 85751
[email protected], [email protected], [email protected]
Rev. 1.8, 12-Aug-10
1N4148WS-V
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
103
Tj = 25 °C
1.1
f = 1 MHz
102
Tj = 100 °C
Tj = 25 °C
CD (VR)
IF (mA)
1
CD (0 V)
1.0
10
0.9
0.8
10-1
0.7
10-2
1
0
2
17437
Figure 1. Forward characteristics
104
0
17440
VF (V)
6
8
10
VR (V)
104
5
f = 1 kHz
2
2
103
103
5
5
2
2
IR (nA)
Rf (Ω)
4
Figure 4. Relative Capacitance vs. Reverse Voltage
Tj = 25 °C
5
2
102
5
102
5
2
2
10
10
5
5
VR = 20 V
2
2
1
10-2
10-1
1
17438
10
0
102
17441
IF (mA)
Figure 2. Dynamic Forward Resistance vs. Forward Current
100
200
Tj (°C)
Figure 5. Leakage Current vs. Junction Temperature
Ptot - Power Dissipation (mW)
250
200
150
100
50
0
0
50
100
150
200
T - Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
20324
Document Number 85751
Rev. 1.8, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
1N4148WS-V
Vishay Semiconductors
100
5
4
3
2
I
IFRM (A)
1
T = 1/fP
IFRM
10
5
4
3
2
n = tP/T
tP
n=0
t
T
0.1
0.2
0.5
5
4
3
2
0.1
10-5
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10
tP (s)
17442
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.20 (0.008)
0.40 (0.016)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
www.vishay.com
4
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
For technical questions within your region, please contact one of the following: Document Number 85751
[email protected], [email protected], [email protected]
Rev. 1.8, 12-Aug-10
Legal Disclaimer Notice
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Revision: 12-Mar-12
1
Document Number: 91000