1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148-V • Silicon epitaxial planar diode • Fast switching diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4148WS-V Ordering code Type Marking Remarks 1N4148WS-V-GS18 or 1N4148WS-V-GS08 A2 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VR 75 V VRRM 100 V f ≥ 50 Hz IF(AV) 1501) mA t < 1 s and Tj = 25 °C IFSM 350 mA Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load Surge forward current Ptot Power dissipation 200 1) mW Note: 1) Valid provided that electrodes are kept at ambient temperature. Document Number 85751 Rev. 1.8, 12-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 1N4148WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 6501) K/W Thermal resistance junction to ambient air Junction temperature Tj 150 °C Storage temperature Tstg - 65 to + 150 °C Note: 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Leakage current Test condition Symbol Max. Unit IF = 10 mA VF Min. Typ. 1000 mV IF = 100 mA VF 1200 mV VR = 20 V IR 25 nA VR = 75 V IR 5 µA VR = 100 V IR 100 µA VR = 20 V, Tj = 150 °C IR 50 µA VF = VR = 0 V CD 4 pF Tested with 50 mA pulses, tp = 0.1 µs, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 V Reverse recovery time IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 Ω trr 4 ns Rectification efficiency f = 100 MHz, VRF = 2 V ην Diode capacitance Voltage rise when switching ON (tested with 50 mA pulses) 0.45 Rectification Efficiency Measurement Circuit 60 Ω 2 nF VRF = 2 V 5 kΩ VO 17436 www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85751 [email protected], [email protected], [email protected] Rev. 1.8, 12-Aug-10 1N4148WS-V Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 103 Tj = 25 °C 1.1 f = 1 MHz 102 Tj = 100 °C Tj = 25 °C CD (VR) IF (mA) 1 CD (0 V) 1.0 10 0.9 0.8 10-1 0.7 10-2 1 0 2 17437 Figure 1. Forward characteristics 104 0 17440 VF (V) 6 8 10 VR (V) 104 5 f = 1 kHz 2 2 103 103 5 5 2 2 IR (nA) Rf (Ω) 4 Figure 4. Relative Capacitance vs. Reverse Voltage Tj = 25 °C 5 2 102 5 102 5 2 2 10 10 5 5 VR = 20 V 2 2 1 10-2 10-1 1 17438 10 0 102 17441 IF (mA) Figure 2. Dynamic Forward Resistance vs. Forward Current 100 200 Tj (°C) Figure 5. Leakage Current vs. Junction Temperature Ptot - Power Dissipation (mW) 250 200 150 100 50 0 0 50 100 150 200 T - Ambient Temperature (°C) Figure 3. Admissible Power Dissipation vs. Ambient Temperature 20324 Document Number 85751 Rev. 1.8, 12-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 1N4148WS-V Vishay Semiconductors 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) 17442 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) Package Dimensions in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.20 (0.008) 0.40 (0.016) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 www.vishay.com 4 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) For technical questions within your region, please contact one of the following: Document Number 85751 [email protected], [email protected], [email protected] Rev. 1.8, 12-Aug-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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