2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 PRODUCT CAPABILITY SHEET Performance Advantages • 50% real estate reduction over competition • On State Dissipation is 1.5 to 2 times less than competition • Switching Characteristics - (ton) - up to 10 times faster • Can handle 3 times the surge as competition for the same physical area • Custom designs in 3-4 weeks (competition does not offer custom arrangements) Monolithic Flip Chip Thyristor Surge Protection Device Array for Implantable Applications Features • Monolithic Flip Chip Construction, all contacts on one side • Available with solderable surface • Common Anode/Cathode available • Available in 2, 3, 4, 5, 6, 8 element arrays (see outlines below) • Available in 5-8.5 Volt versions • Power Rating is 50 Joules at 37°C • Also available in TVS (TVSMEDA Series) Proposed Maximum Ratings @ 37°C-Body Temperature (unless otherwise specified) Part Number VDRM VZ VBO IBO IH 5 6 8 20 1 3 6 30 100 500 10 100 TSPDMEDA001-7.5 7.5 8 12 20 1 3 6 30 100 500 15 100 TSPDMEDA001-8.5 8.5 9 12 20 1 3 6 30 100 500 15 100 Volts MAX TSPDMEDA001-5 VT VT ITSM IR ton VC CO @1 A @8 A @ VWM 1kV/us @ 50Ω @ 0V Volts Volts mA mA Volts Volts Amps nA nsec Volts pF MIN MAX MAX MIN MAX MAX MAX MAX MAX MAX MAX Monolithic Flip Chip Configurations (in development) Elementary Cell Schematic 2 mm Max 2.5 mm Max Common Cathode These Monolithic Arrays will feature multiple devices on one chip with all contacts on one surface. The surfaces are available with a solderable metal contact. MSC0988.PDF 2 mm Max 5 mm Max For more information on these devices contact Microsemi's Santa Ana division for custom configurations and designs. Input Common Anode