Si7348DP Datasheet

Si7348DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (Ω)
ID (A)
0.0125 @ VGS = 10 V
14
0.020 @ VGS = 4.5 V
11
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07-mm Profile
• PWM Optimized
Available
RoHS*
COMPLIANT
APPLICATIONS
• DC/DC conversion High-Side
- Desktop
- Server
• Synchronous Rectification
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
D
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7348DP-T1
Si7348DP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)a
TA = 25°C
TA = 70°C
Pulsed Drain Current (10 µs Pulse Width)
IDM
IS
Continuous Source Current (Diode Conduction)a
TA = 25°C
TA = 70°C
Maximum Power Dissipationa
ID
Operating Junction and Storage Temperature Range
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)b,c
10 secs
Steady State
20
±20
Unit
V
14
11
9.0
7.0
50
3.7
4.1
2.6
1.6
1.8
1.1
–55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 sec
Steady State
Steady State
RthJA
RthJC
Typical
22
55
6.4
Maximum
30
70
8.0
Unit
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72129
S-51773-Rev. B, 31-Oct-05
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Si7348DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Gate Threshold Voltage
Test Condition
Min
1.0
Typ
Max
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
±100
nA
IDSS
VDS = 20 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V, TJ = 55°C
5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
VDS ≥ 5 V, VGS = 10 V
µA
30
A
VGS = 10 V, ID = 14 A
0.010
0.0125
VGS = 4.5 V, ID = 11 A
0.016
0.020
Forward Transconductancea
gfs
VDS = 6 V, ID = 14 A
19
Diode Forward Voltagea
VSD
IS = 3.7 A, VGS = 0 V
0.8
1.2
5.7
8.5
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.0
Gate Resistance
Rg
1.3
Turn-On Delay Time
VDS = 10 V, VGS = 4.5 V, ID = 14 A
2.2
td(on)
Rise Time
VDD = 10 V, RL = 10 Ω
ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/µs
nC
Ω
17
30
17
30
37
60
11
20
30
60
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
60
60
TC = -55˚C
VGS = 10 thru 5 V
25˚C
50
40
30
I D - Drain Current (A)
I D - Drain Current (A)
50
4V
20
10
40
125˚C
30
20
10
3V
0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72129
S-51773-Rev. B, 31-Oct-05
Si7348DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
0.05
1000
0.04
800
C - Capacitance (pF)
r DS(on) - On-Resistance ( Ω )
Ciss
0.03
VGS = 4.5 V
0.02
VGS = 10 V
Coss
400
Crss
0.01
200
0.00
0
0
10
20
30
40
50
0
4
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.6
VDS = 10 V
ID = 14 A
3.6
2.4
1.2
1.6
VGS = 10 V
ID = 14 A
1.4
r DS(on) - On-Resistance
(Normalized)
4.8
0.0
0.0
3.2
4.8
6.4
1.2
1.0
0.8
0.6
-50
8.0
-25
0
Gate Charge
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.040
r DS(on) - On-Resistance ( Ω )
60
TJ = 150˚C
10
TJ = 25˚C
0.032
ID = 14 A
0.024
0.016
0.008
0.000
1
0.00
25
TJ - Junction Temperature ( ˚C)
Qg - Total Gate Charge (nC)
I S - Source Current (A)
8
On-Resistance vs. Drain Current
6.0
V GS - Gate-to-Source Voltage (V)
600
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72129
S-51773-Rev. B, 31-Oct-05
10
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Si7348DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.4
200
0.2
160
-0.0
Power (W)
V GS(th) Variance (V)
ID = 250 µA
-0.2
120
80
-0.4
40
-0.6
-0.8
-50
-25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (˚C)
1
10
Time (sec)
Single Pulse Power
Threshold Voltage
100
Limited
by rDS(on)
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
0.1
10 s
dc
TC = 25˚C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 55˚C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72129
S-51773-Rev. B, 31-Oct-05
Si7348DP
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72129.
Document Number: 72129
S-51773-Rev. B, 31-Oct-05
www.vishay.com
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Document Number: 91000
Revision: 18-Jul-08
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