Si7806DN New Product Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 14.4 0.0175 @ VGS = 4.5 V 12.6 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters – Secondary Synchronous Rectifier – High-Side MOSFET in Synchronous Buck PowerPAKt 1212-8 D S 3.30 mm 3.30 mm 1 S 2 S 3 G G 4 D 8 D 7 D 6 S D 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 9.2 11.6 7.4 A 3.2 1.3 A 3.8 1.5 2.0 0.8 IDM Continuous Source Current (Diode Conduction)a V 14.4 ID Unit 40 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 24 33 65 81 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71869 S-20805—Rev. A, 17-Jun-02 www.vishay.com 1 Si7806DN New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea m mA 40 A VGS = 10 V, ID = 14.4 A 0.009 0.011 VGS = 4.5 V, ID = 12.6 A 0.0145 0.0175 gfs VDS = 15 V, ID = 14.4 A 34 VSD IS = 3.2 A, VGS = 0 V 0.77 1.2 Qg VDS = 15 V, VGS = 4.5 V, ID = 14.4 A 8.5 11 19 24 VDS = 15 V, VGS = 10 V, ID = 14.4 A 3.6 W S V Dynamicb Total Gate Charge Qgt nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.0 Rg 2 td(on) 8 15 12 20 25 40 10 20 35 70 Gate-Resistance Turn-On Delay Time Rise Time tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 35 35 VGS = 10 thru 4 V 30 I D – Drain Current (A) I D – Drain Current (A) 30 25 20 15 10 25 20 15 TC = 125_C 10 3V 5 5 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 3.5 4.0 25_C 0.5 1.0 1.5 2.0 –55_C 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Document Number: 71869 S-20805—Rev. A, 17-Jun-02 Si7806DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1400 0.025 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 1200 Ciss 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 1000 800 600 Coss 400 0.005 Crss 200 0.000 0 0 5 10 15 20 25 30 35 40 0 5 15 20 25 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 15 V ID = A 8 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 10 6 4 2 VGS = 10 V ID = 14.4 A 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 –50 20 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.025 50 r DS(on) – On-Resistance ( W ) I S – Source Current (A) ID = 14.4 A TJ = 150_C 10 TJ = 25_C 1 0.0 0.020 ID = 5 A 0.015 0.010 0.005 0.000 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71869 S-20805—Rev. A, 17-Jun-02 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7806DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.6 50 ID = 250 mA 0.4 40 Power (W) V GS(th) Variance (V) 0.2 –0.0 –0.2 30 20 –0.4 –0.6 10 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Safe Operating Area 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D – Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TC = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71869 S-20805—Rev. A, 17-Jun-02 Si7806DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 Document Number: 71869 S-20805—Rev. A, 17-Jun-02 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 www.vishay.com 5