Si7806BDN Vishay Siliconix New Product N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 12.6 0.0205 at VGS = 4.5 V 10.6 • TrenchFET® Power MOSFETS • PWM Optimized • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile RoHS COMPLIANT APPLICATIONS • DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 10 secs 12.6 10.1 3.2 3.8 2.0 Steady State 30 ± 20 8.0 6.4 40 1.3 1.5 0.8 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 sec Steady State Steady State RthJA RthJC Typical 24 65 1.9 Maximum 33 81 2.4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73081 S-60790-Rev. B, 08-May-06 www.vishay.com 1 Si7806BDN Vishay Siliconix SPECIFICATIONS TJ = 25 °C unless otherwise noted Parameter Symbol Test Conditions Min Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a Max Unit 3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V Typ µA 40 A VGS = 10 V, ID = 12.6 A 0.012 0.0145 VGS = 4.5 V, ID = 10.6 A 0.017 0.0205 gfs VDS = 15 V, ID = 12.6 A 34 VSD IS = 3.2 A, VGS = 0 V 0.77 Qg VDS = 15 V, VGS = 4.5 V, ID = 12.6 A 8.5 11 19 24 rDS(on) Ω S 1.2 V b Dynamic Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 10 V, ID = 12.6 A 3.0 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 2 f = 10 MHz td(on) Turn-On Delay Time nC 3.6 IF = 3.2 A, di/dt = 100 A/µs 8 15 12 20 25 40 10 20 35 70 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 40 40 VGS = 10 thru 5 V 35 35 30 4V I D − Drain Current (A) I D − Drain Current (A) 30 25 20 15 10 25 20 15 TC = 125 °C 10 25 °C 5 5 3V - 55 °C 0 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73081 S-60790-Rev. B, 08-May-06 Si7806BDN Vishay Siliconix 25 °C unless noted 0.040 1400 0.035 1200 0.030 C − Capacitance (pF) r DS(on) − On-Resistance (Ω) TYPICAL CHARACTERISTICS 0.025 VGS = 4.5 V 0.020 0.015 VGS = 10 V 0.010 Ciss 1000 800 600 Coss 400 Crss 200 0.005 0.000 0 0 5 10 15 20 25 30 35 40 0 5 ID − Drain Current (A) 10 25 30 Capacitance 1.8 10 VDS = 15 V ID = 12.6 A VGS = 10 V ID = 12.6 A 1.6 rDS(on) − On-Resistance (Normalized) 8 6 4 2 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 - 50 20 Qg − Total Gate Charge (nC) - 25 0 25 75 100 125 150 On-Resistance vs. Junction Temperature 0.030 50 ID = 12.6 A r DS(on) − On-Resistance (Ω) 0.025 TJ = 150 °C 10 TJ = 25 °C 1 0.0 50 TJ − Junction Temperature (°C) Gate Charge I S − Source Current (A) 20 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current V GS − Gate-to-Source Voltage (V) 15 ID = 2 A 0.020 0.015 0.010 0.005 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73081 S-60790-Rev. B, 08-May-06 10 www.vishay.com 3 Si7806BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.6 50 0.4 ID = 250 µA 40 Power (W) V GS(th) Variance (V) 0.2 0.0 - 0.2 30 20 - 0.4 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ − Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25 °C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73081 S-60790-Rev. B, 08-May-06 Si7806BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73081. Document Number: 73081 S-60790-Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1