Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For switching For wave detection 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 1 0.60+0.10 –0.05 Rating Unit Reverse voltage (DC) VR 30 V Peak forward Single IFM 150 mA current Double * Forward current (DC) Single Double IF 30 mA Internal Connection 20 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 EIAJ : SC-61 Mini4-G1 Package Marking Symbol: M1N 110 * 1.1+0.3 –0.1 10° +0.2 0 to 0.1 1.1–0.1 Symbol 0.4±0.2 (0.65) (0.2) ■ Absolute Maximum Ratings Ta = 25°C Parameter 5° 0.5R 2.8+0.2 –0.3 3 • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low voltage rectification • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Mini type 4-pin package 1.50+0.25 –0.05 ■ Features 3 4 2 1 Note) *: Value per chip ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 1 µA Forward voltage (DC) VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA Ct VR = 1 V, f = 1 MHz 1.5 pF trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns η Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Terminal capacitance Reverse recovery time * Detection efficiency 1.0 Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. *: trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: August 2001 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. SKH00103AED 1 MA4X713 Characteristics charts between pins 1 and 4, 2 and 3 IF V F IR V R 75°C 25°C 1.0 102 −20°C Ta = 125°C 10 1 Reverse current IR (µA) Forward current IF (mA) 102 10−1 10−2 VF Ta 103 0.8 Ta = 125°C 10 75°C 1 25°C 10−1 0 0.2 0.4 0.6 0.8 1.0 10−2 1.2 0 5 10 15 20 25 30 Reverse voltage VR (V) IR T a Ct VR Reverse current IR (µA) 10 1 10−1 10−2 −40 2 1 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C VR = 30 V 15 V 200 0.4 3 mA 1 mA 0 5 10 15 20 25 Reverse voltage VR (V) SKH00103AED 0 −40 0 40 80 120 Ambient temperature Ta (°C) 3 102 IF = 30 mA 0.6 0.2 Forward voltage VF (V) 103 Forward voltage VF (V) 103 30 160 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.