PANASONIC MA3J702

Schottky Barrier Diodes (SBD)
MA3J702 (MA10702)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.3+0.1
–0
0.15+0.1
–0.05
1
2
(0.65) (0.65)
5°
Symbol
Rating
Unit
VR
20
V
Repetitive peak reverse-voltage
VRRM
20
V
Average forward current
IF(AV)
500
mA
Non-repetitive peak forwardsurge-current *
IFSM
3
A
Junction temperature
Tj
125
°C
Marking Symbol: M4R
Storage temperature
Tstg
−55 to +125
°C
Internal Connection
(0.15)
0 to 0.1
Reverse voltage (DC)
0.9±0.1
1.3±0.1
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5°
1.25±0.1
2.1±0.1
• IF(AV) = 500 mA rectification is possible
• Small reverse current IR. (About 1/10 of IR of the ordinary
products)
• S-Mini type 3-pin package
(0.425)
3
■ Features
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
3
1
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Conditions
Min
Typ
Max
Unit
µA
IR1
VR = 5 V
1
IR2
VR = 10 V
10
VF1
IF = 10 mA
0.3
0.4
VF2
IF = 500 mA
0.5
0.55
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
60
pF
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
5
ns
Forward voltage (DC)
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00053AED
1
MA3J702
IF  V F
IR  V R
1
0.8
0.7
103
Reverse current IR (µA)
75°C
25°C
−20°C
10−2
10−3
10−4
Ta = 125°C
Forward voltage VF (V)
Ta = 125°C
10−1
Forward current IF (A)
VF  Ta
104
102
75°C
10
1
0.6
0.5
IF = 500 mA
0.4
0.3
50 mA
0.2
25°C
5 mA
0.1
10−5
0
0.1
0.2
0.3
0.4
0.5
10−1
0.6
0
Forward voltage VF (V)
5
10
15
20
25
0
−40
30
Reverse voltage VR (V)
IR  T a
0
Ct  VR
80
10
1
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
Reverse current IR (µA)
100
60
50
40
30
20
10
0.1
−40
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
200
Ta = 25°C
Ta = 25°C
VR = 20 V
10 V
6V
3V
160
1 000
70
1 000
120
IF(surge)  tW
80
10 000
40
Case temperature Ta (°C)
IF(surge)
300
tW
100
30
Breakdown point (typ.)
10
3
1
0.3
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00053AED
30
0.1
0.1
0.3
1
3
10
Pulse width tW (ms)
30
100
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Due to modification or other reasons, any information contained in this material, such as available
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2001 MAR