Known Good Die Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifier AD8608-KGD FEATURES GENERAL DESCRIPTION Low offset voltage: 65 µV maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 10 MHz High open-loop gain: 1000 V/mV Unity gain stable Single-supply operation: 2.7 V to 5.5 V Known good die (KGD): these die are fully guaranteed to data sheet specifications The AD8608-KGD1 is a single, rail-to-rail input and output, single-supply amplifier that features very low offset voltage, low input voltage and current noise, and wide signal bandwidth. The AD8608-KGD uses the Analog Devices, Inc. patented DigiTrim® trimming technique, which achieves superior precision without laser trimming. APPLICATIONS Photodiode amplification Battery-powered instrumentation Multipole filters Sensors Barcode scanners Audio The combination of low offsets, low noise, very low input bias currents, and high speed makes this amplifier useful in a wide variety of applications. Filters, integrators, photodiode amplifiers, and high impedance sensors all benefit from the combination of performance features. Audio and other ac applications benefit from the wide bandwidth and low distortion. Applications for this amplifier include optical control loops, portable and loop-powered instrumentation, and audio amplification for portable devices. The AD8608-KGD is specified over the extended industrial temperature range (−40°C to +125°C). Additional application and technical information can be found in the AD8605/AD8606/AD8608 data sheet. 1 Protected by U.S. Patent No. 5,969,657. Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2015 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com AD8608-KGD Known Good Die TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................5 Applications ....................................................................................... 1 ESD Caution...................................................................................5 General Description ......................................................................... 1 Pin Configuration and Function Descriptions..............................6 Revision History ............................................................................... 2 Outline Dimensions ..........................................................................7 Specifications..................................................................................... 3 Die Specifications and Assembly Recommendations ..............7 5 V Electrical Specifications ........................................................ 3 Ordering Guide .............................................................................7 2.7 V Electrical Specifications..................................................... 4 REVISION HISTORY 4/15—Revision 0: Initial Version Rev. 0 | Page 2 of 7 Known Good Die AD8608-KGD SPECIFICATIONS 5 V ELECTRICAL SPECIFICATIONS VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted. Table 1. Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Symbol Conditions VOS VS = 3.5 V, VCM = 2.7 V VS = 5 V, VCM = 0 V to 5 V −40°C < TA < +125°C Min IB Typ Max Unit 20 80 75 300 750 1 300 0.5 75 5 µV µV µV pA pA pA pA V dB dB V/mV µV/°C 0.2 −40°C < TA < +125°C Input Offset Current IOS 0.1 −40°C < TA < +125°C Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain Offset Voltage Drift INPUT CAPACITANCE Common-Mode Input Capacitance Differential Input Capacitance OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Output Current Closed-Loop Output Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Unity Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Peak-to-Peak Noise Voltage Noise Density Current Noise Density CMRR AVO ΔVOS/ΔT VCM = 0 V to 5 V −40°C < TA < +125°C RL = 2 kΩ, VO = 0.5 V to 4.5 V −40°C < TA < +125°C 0 85 75 300 CCOM CDIFF VOH VOL IOUT ZOUT PSRR ISY IL = 1 mA IL = 10 mA −40°C < TA < +125°C IL = 1 mA IL= 10 mA −40°C < TA < +125°C 4.96 4.7 4.6 pF pF 4.98 4.79 V V V mV mV mV mA Ω 40 210 290 ±80 1 77 70 92 90 1 SR tS GBP ΦM RL = 2 kΩ, CL = 16 pF To 0.01%, 0 V to 2 V step, AV = 1 5 <1 10 65 en p-p en en in f = 0.1 Hz to 10 Hz f = 1 kHz f = 10 kHz f = 1 kHz 2.3 8 6.5 0.01 Rev. 0 | Page 3 of 7 6.0 8.8 2.6 20 170 f = 1 MHz, AV = 1 VS = 2.7 V to 5.5 V −40°C < TA < +125°C IOUT = 0 mA −40°C < TA < +125°C 100 90 1000 1.5 1.2 1.4 dB dB mA mA V/µs µs MHz Degrees 3.5 12 µV p-p nV/√Hz nV/√Hz pA/√Hz AD8608-KGD Known Good Die 2.7 V ELECTRICAL SPECIFICATIONS VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted. Table 2. Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Symbol Conditions VOS VS = 3.5 V, VCM = 2.7 V VS = 2.7 V, VCM = 0 V to 2.7 V −40°C < TA < +125°C Min IB Typ Max 20 80 75 300 750 1 300 0.5 75 2.7 0.2 −40°C < TA < +125°C Input Offset Current IOS 0.1 −40°C < TA < +125°C Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain Offset Voltage Drift INPUT CAPACITANCE Common-Mode Input Capacitance Differential Input Capacitance OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Output Current Closed-Loop Output Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Unity Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Peak-to-Peak Noise Voltage Noise Density Current Noise Density CMRR AVO ΔVOS/ΔT VCM = 0 V to 2.7 V −40°C < TA < +125°C RL = 2 kΩ, VO = 0.5 V to 2.2 V −40°C < TA < +125°C 0 80 70 110 CCOM CDIFF VOH VOL IOUT ZOUT PSRR ISY IL = 1 mA −40°C < TA < +125°C IL = 1 mA −40°C < TA < +125°C 2.6 2.6 pF pF 2.66 V V mV mV mA Ω 40 50 ±30 1.2 77 70 92 90 1.15 SR tS GBP ΦM RL = 2 kΩ, CL = 16 pF To 0.01%, 0 V to 1 V step, AV = 1 5 <0.5 9 50 en p-p en en in f = 0.1 Hz to 10 Hz f = 1 kHz f = 10 kHz f = 1 kHz 2.3 8 6.5 0.01 Rev. 0 | Page 4 of 7 6.0 µV µV pA pA pA pA V dB dB V/mV µV/°C 8.8 2.6 25 f = 1 MHz, AV = 1 VS = 2.7 V to 5.5 V −40°C < TA < +125°C IOUT = 0 mA −40°C < TA < +125°C 95 85 350 1.5 Unit 1.4 1.5 dB dB mA mA V/µs µs MHz Degrees 3.5 12 µV p-p nV/√Hz nV/√Hz pA/√Hz Known Good Die AD8608-KGD ABSOLUTE MAXIMUM RATINGS ESD CAUTION Table 3. Parameter Supply Voltage Input Voltage Differential Input Voltage Output Short-Circuit Duration to GND Storage Temperature Range Operating Temperature Range Junction Temperature Range Rating 6V GND to VS 6V Observe Derating Curves −65°C to +150°C −40°C to +125°C −65°C to +150°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. 0 | Page 5 of 7 AD8608-KGD Known Good Die PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 1 14 13 3 12 4A 4B 11B 11A 10 5 6 7 NC 9 NC 8 13166-001 2 Figure 1. Pad Configuration Table 4. Pad Function Descriptions Pad 1 2 3 4A 4B 5 6 7 8 9 10 11A 11B 12 13 14 X-Axis (µm) −490 −749 −749 −703 −703 −749 −749 −683 +688 +749 +749 +749 +749 +749 +749 +597 Y-Axis (µm) +1239 +1153 +853 +85 −84 −659 −944 −1189 −1189 −916 −631 −122 +47 +813 +1113 +1239 Mnemonic OUT A − IN A + IN A V+ Supply V+ Supply + IN B − IN B OUTB OUTC − IN C + IN C V− Supply V− Supply + IN D − IN D OUT D Pad Type Single Single Single Double Double Single Single Single Single Single Single Double Double Single Single Single Rev. 0 | Page 6 of 7 Description Output Channel A Inverting Input Channel A Noninverting Input Channel A Positive Supply Voltage Positive Supply Voltage, Double Bond Pad Noninverting Input Channel B Inverting Input Channel B Output Channel B Output Channel C Inverting Input Channel C Noninverting Input Channel C Negative Supply Voltage Negative Supply Voltage, Double Bond Pad Noninverting Input Channel D Inverting Input Channel D Output Channel D Known Good Die AD8608-KGD OUTLINE DIMENSIONS 0.305 1.900 1 2 14 13 3 12 4A 11B 4B 11A 10 5 9 NC 8 NC TOP VIEW (CIRCUIT SIDE) SIDE VIEW 0.092 × 0.092 04-13-2015- A 6 7 2.930 Figure 2. 14-Pad Bare Die [CHIP] (C-14-3) Dimensions shown in millimeters DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS Table 5. Die Specifications Parameter Die Size (Maximum) Bond Pad Composition Bond Pad (Minimum) Passivation Type Thickness Backside Bias Scribe Line (Street) Width ESD Value 1900 × 2930 AlCu (0.5%) 92 × 92 OxyNitride 305 GND 100 × 150 HBM 4000 Unit µm % µm Not applicable µm Not applicable µm V Table 6. Assembly Recommendations Assembly Component Die Attach Bonding Method Recommendation Ablestik 84-1LMIS R4 1 mil gold ORDERING GUIDE Model AD8608-KGD-CHIP Temperature Range −40°C to +125°C Package Description 14-Pad Bare Die [CHIP] ©2015 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13166-0-4/15(0) Rev. 0 | Page 7 of 7 Package Option C-14-3