Si3867DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 5.1 0.067 at VGS = - 3.3 V - 4.5 0.100 at VGS = - 2.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC - HDD - Power Supplies • Portable Devices Such As Cell Phones, PDA, DSC, and DVC TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3867DV-T1-E3 (Lead (Pb)-free) Si3867DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Diode Current (Diode Conduction)a IS TA = 25 °C TA = 85 °C PD - 3.9 - 3.7 - 2.8 - 20 - 1.7 - 0.9 2.0 1.1 1.0 0.6 TJ, Tstg Operating Junction and Storage Temperature Range V - 5.1 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72068 S09-2275-Rev. D, 02-Nov-09 www.vishay.com 1 Si3867DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.1 A 0.041 0.051 RDS(on) VGS = - 3.3 V, ID = - 4.5 A 0.054 0.067 VGS = - 2.5 V, ID = - 2 A 0.081 0.100 gfs VDS = - 5 V, ID = - 5.1 A 11 VSD IS = - 1.7 A, VGS = 0 V - 0.7 - 1.2 7 11 VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A 2.3 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a - 1.4 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C -5 µA - 20 A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 17 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.6 IF = - 1.7 A, dI/dt = 100 A/µs 30 31 50 32 50 30 50 25 50 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 5 V thru 3.5 V TC = - 55 °C 3V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 2.5 V 8 4 125 °C 25 °C 12 8 4 2V 1.5 V 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 72068 S09-2275-Rev. D, 02-Nov-09 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 0.20 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1000 0.16 VGS = 2.5 V 0.12 0.08 VGS = 3.3 V Ciss 800 600 400 VGS = 4.5 V Coss 0.04 200 Crss 0 0.00 0 4 8 12 16 0 20 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V ID = 5.1 A VGS = 4.5 V ID = 5.1 A 4 3 2 1 (Normalized) 1.4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 1.0 0.8 0 0 2 4 6 0.6 - 50 8 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.20 20 TJ = 150 °C I S - Source Current (A) R DS(on) - On-Resistance (Ω) 10 0.16 ID = 5.1 A ID = 2 A 0.12 0.08 0.04 TJ = 25 °C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72068 S09-2275-Rev. D, 02-Nov-09 5 www.vishay.com 3 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 30 25 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 20 TA = 25 °C 10 0.0 5 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ - Temperature (°C) 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 Limited by R DS(on)* IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72068 S09-2275-Rev. D, 02-Nov-09 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72068. Document Number: 72068 S09-2275-Rev. 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