VISHAY SI3867DV-T1-E3

Si3867DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (Ω)
ID (A)
0.051 at VGS = - 4.5 V
- 5.1
0.067 at VGS = - 3.3 V
- 4.5
0.100 at VGS = - 2.5 V
- 3.7
• TrenchFET® Power MOSFET
• PWM Optimized
3 mm
6
2
5
3
4
RoHS*
APPLICATIONS
• DC/DC
- HDD
- Power Supplies
• Portable Devices Such As Cell Phones, PDA,
DSC, and DVC
TSOP-6
Top View
1
Pb-free
Available
COMPLIANT
(4) S
(3) G
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3867DV-T1
Si3867DV-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Diode Current (Diode Conduction)a
IS
TA = 25 °C
TA = 85 °C
PD
- 3.9
- 3.7
- 2.8
- 20
- 1.7
- 0.9
2.0
1.1
1.0
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 5.1
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
45
62.5
90
110
25
30
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72068
S-60422-Rev. C, 20-Mar-06
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Si3867DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
- 0.6
Typ
Max
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.1 A
0.041
0.051
rDS(on)
VGS = - 3.3 V, ID = - 4.5 A
0.054
0.067
VGS = - 2.5 V, ID = - 2 A
0.081
0.100
gfs
VDS = - 5 V, ID = - 5.1 A
11
VSD
IS = - 1.7 A, VGS = 0 V
- 0.7
- 1.2
7
11
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A
2.3
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductancea
Diode Forward Voltage
a
- 1.4
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
µA
- 20
A
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
17
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
1.6
IF = - 1.7 A, di/dt = 100 A/µs
30
31
50
32
50
30
50
25
50
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
20
20
VGS = 5 thru 3.5 V
TC = - 55 °C
3V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
2.5 V
8
4
125 °C
25 °C
12
8
4
2V
1.5 V
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
4.0
Document Number: 72068
S-60422-Rev. C, 20-Mar-06
Si3867DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
1200
1000
0.16
C - Capacitance (pF)
r DS(on) - On-Resistance (Ω)
0.20
VGS = 2.5 V
0.12
0.08
VGS = 3.3 V
Ciss
800
600
400
VGS = 4.5 V
Coss
0.04
200
0.00
Crss
0
0
4
8
12
16
20
0
4
8
ID - Drain Current (A)
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VGS = 4.5 V
ID = 5.1 A
VDS = 10 V
ID = 5.1 A
4
r DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
12
3
2
1.4
1.2
1.0
0.8
1
0.6
- 50
0
0
2
4
6
8
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.20
20
TJ = 150 °C
I S - Source Current (A)
r DS(on) - On-Resistance (Ω)
10
0.16
ID = 5.1 A
ID = 2 A
0.12
0.08
0.04
TJ = 25 °C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72068
S-60422-Rev. C, 20-Mar-06
1.2
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si3867DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.4
30
25
ID = 250 µA
0.2
20
Power (W)
V GS(th) Variance (V)
0.3
0.1
TA = 25 °C
10
0.0
5
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
TJ - Temperature (°C)
10
100
600
Time (sec)
Threshold Voltage
Single Pulse Power
100
rDS(on) Limited
IDM Limited
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
dc
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72068
S-60422-Rev. C, 20-Mar-06
Si3867DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72068.
Document Number: 72068
S-60422-Rev. C, 20-Mar-06
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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