NSS60100DMT D

NSS60100DMT
60 V, 1 A, Low VCE(sat) PNP
Transistors
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and LED lightning,
power management…etc. In the automotive industry they can be used
in air bag deployment and in the instrument cluster. The high current
gain allows e2PowerEdge devices to be driven directly from PMU’s
control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
www.onsemi.com
60 Volt, 1 Amp
PNP Low VCE(sat) Transistors
MARKING
DIAGRAM
Features
WDFN6
CASE 506AN
• NSV Prefix for Automotive and Other Applications Requiring
•
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
NSV60100DMTWTBG − Wettable Flanks Device
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
60
Vdc
Collector−Base Voltage
VCBO
60
Vdc
Emitter−Base Voltage
VEBO
6
Vdc
IC
1
A
ICM
2
A
Collector Current − Continuous
Collector Current − Peak
6
5
4
AP = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
MAXIMUM RATINGS (TA = 25°C)
Rating
1
1
2 AP MG
G
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction−to−Ambient
(Notes 1 and 2)
Total Power Dissipation per Package @
TA = 25°C (Note 2)
Thermal Resistance Junction−to−Ambient
(Note 3)
Symbol
Max
Unit
RqJA
55
°C/W
PD
2.27
W
RqJA
69
°C/W
PD
1.8
W
TJ, Tstg
−55 to
+150
°C
ORDERING INFORMATION
Package
Shipping†
NSS60100DMTTBG
WDFN6
(Pb−Free)
3000/Tape &
Reel
NSV60100DMTWTBG
WDFN6
(Pb−Free)
3000/Tape &
Reel
Device
Power Dissipation per Transistor @ TA = 25°C
(Note 3)
Junction and Storage Temperature Range
1. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Dual Operation).
2. PD per Transistor when both are turned on is one half of Total PD or 1.13 Watts.
3. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Single−Operation).
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60100DMT/D
NSS60100DMT
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Collector−Emitter Breakdown Voltage (IC = −10 mA, IB = 0)
V(BR)CEO
−60
V
Collector−Base Breakdown Voltage (Ic = −0.1 mA, IE = 0)
V(BR)CBO
−80
V
Emitter−Base Breakdown Voltage (IE = −0.1 mA, IC = 0)
V(BR)EBO
−6
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
V
Collector Cutoff Current (VCB = −60 V, IE = 0)
ICBO
−100
nA
Emitter Cutoff Current (VBE = −5.0 V)
IEBO
−100
nA
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = −100 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1 A, VCE = −2.0 V)
(IC = −2 A, VCE = −2.0 V
150
120
90
40
Collector−Emitter Saturation Voltage (Note 4)
(IC = −500 mA, IB = −50 mA)
(IC = −1 A, IB = −50 mA)
(IC = −1 A, IB = −100 mA)
VCE(sat)
Base*Emitter Saturation Voltage (Note 4)
(IC = −500 mA, IB = −50 mA)
(IC = −1 A, IB = −50 mA)
(IC = −1 A, IB = −100 mA)
VBE(sat)
Base−Emitter Turn−on Voltage (Note 4)
(IC = 500 mA, IB = 50 mA)
VBE(on)
230
180
140
80
V
−0.115
−0.250
−0.200
−0.160
−0.350
−0.300
V
−1.0
−1.0
−1.1
−0.9
V
DYNAMIC CHARACTERISTICS
Cobo
18
pF
fT
155
MHz
Delay Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA)
td
15
ns
Rise Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA)
tr
13
ns
Storage Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA)
ts
360
ns
Fall Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA)
tf
22
ns
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cutoff Frequency
(IC = 50 mA, VCE = 2.0 V, f = 100 MHz)
SWITCHING TIMES
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
www.onsemi.com
2
NSS60100DMT
TYPICAL CHARACTERISTICS
400
400
350
100°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
350
300
250
25°C
200
−55°C
150
100
25°C
250
200
−55°C
150
100
50
0
0
0.001
0.01
0.1
1
0.001
10
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. DC Current Gain
2.2
10
1
IB = 20 mA
18 mA
2.0
1.8
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
IC, COLLECTOR CURRENT (A)
VCE = 5 V
100°C
300
50
16 mA
14 mA
12 mA
10 mA
1.6
1.4
1.2
8.0 mA
1.0
6.0 mA
0.8
4.0 mA
0.6
0.4
2.0 mA
0.2
0
0.1
150°C
100°C
25°C
IC/IB = 20
−55°C
0.01
0
1
2
3
4
5
6
0.001
0.01
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
Figure 4. Collector−Emitter Saturation Voltage
1
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
1
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
150°C
VCE = 2 V
150°C
150°C
100°C
0.1
25°C
−55°C
IC/IB = 50
−55°C
150°C
0.1
25°C
100°C
IC/IB = 100
0.01
0.01
0.001
0.01
0.1
1
0.001
10
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
www.onsemi.com
3
1
NSS60100DMT
−55°C
25°C
100°C
0.5
150°C
IC/IB = 20
0
0.001
0.01
0.1
1
1.0
−55°C
0.8
25°C
0.6
100°C
0.4
150°C
0.2
VCE = 2 V
0
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Base−Emitter “ON” Voltage
240
1.0
0.9
Cibo, INPUT CAPACITANCE (pF)
TA = 25°C
0.8
0.7
0.6
0.5
IC = 2.0 A
0.4
0.3
IC = 1.0 A
0.2
IC = 0.5 A
0.1
0
IC = 0.1 A
0.0001
0.001
0.01
160
120
80
0
1
1
2
3
4
5
IB, BASE CURRENT (A)
VEB, BASE−EMITTER VOLTAGE (V)
Figure 9. Collector Saturation Region
Figure 10. Input Capacitance
45
TA = 25°C
f = 1 MHz
40
35
30
25
20
15
10
5
0
0
TA = 25°C
f = 1 MHz
200
40
0.1
50
Cobo, OUTPUT CAPACITANCE (pF)
1.2
VBE(on), BASE−EMITTER VOLTAGE (V)
1.0
fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
VCE(sat), COLLECTOR−EMITTER SATURATION (V)
VBE(sat), BASE−EMITTER SATURATION (V)
TYPICAL CHARACTERISTICS
5
10
15
20
25
30
VCB, COLLECTOR−BASE VOLTAGE (V)
6
7
1000
TJ = 25°C
VCE = 2 V
ftest = 100 MHz
100
10
1
1
Figure 11. Output Capacitance
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 12. fT, Current Gain Bandwidth Product
www.onsemi.com
4
NSS60100DMT
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (W)
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
TEMPERATURE (°C)
Figure 13. Power Derating
R(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (°C/W)
100
Duty Cycle = 0.5
0.20
10 0.10
0.05
0.02
1 0.01
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10
100
1000
t, PULSE TIME (sec)
Figure 14. Thermal Resistance by Transistor
R(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (°C/W)
100
Duty Cycle = 0.5
0.20
10
0.10
0.05
0.02
1 0.01
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 15. Thermal Resistance for Both Transistors
www.onsemi.com
5
NSS60100DMT
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE F
D
PIN ONE
REFERENCE
0.10 C
0.10 C
PLATING
ÍÍ
ÍÍ
ÍÍ
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÉÉÉ
EXPOSED Cu
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
MOLD CMPD
DETAIL B
OPTIONAL
CONSTRUCTIONS
E
L
TOP VIEW
DIM
A
A1
A3
b
D
D2
E
E2
e
F
K
L
L1
L
L1
DETAIL A
A3
DETAIL B
0.10 C
ÇÇ
ÉÉ
A
B
OPTIONAL
CONSTRUCTIONS
A
0.08 C
NOTE 4
A1
C
SIDE VIEW
0.10 C A
SEATING
PLANE
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
2.00 BSC
0.57
0.77
2.00 BSC
0.90
1.10
0.65 BSC
0.15 BSC
0.25 REF
0.30
0.20
--0.10
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
B
1.74
2X
D2
F
D2
L
1
0.77
3
1.10
6X
DETAIL A
0.47
E2
0.10 C A
2.30
B
PACKAGE
OUTLINE
6
K
4
6X
b
0.10 C A
e
0.05 C
B
1
NOTE 3
6X
BOTTOM VIEW
0.35
0.65
PITCH
DIMENSIONS: MILLIMETERS
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS60100DMT/D