ONSEMI NTLJD3182FZTAG

NTLJD3182FZ
Power MOSFET and
Schottky Diode
−20 V, −4.0 A, mCoolt Single P−Channel
& Schottky Barrier Diode, ESD
Features
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
•
•
•
•
•
•
Thermal Conduction
Lowest RDS(on) Solution in 2x2 mm Package
Footprint Same as SC−88 Package
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
ESD Protected
High Current Schottky Diode: 2 A Current Rating
This is a Pb−Free Device
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P−CHANNEL MOSFET
V(BR)DSS
RDS(on) Max
−20 V
144 mW @ −2.5 V
SCHOTTKY DIODE
• Optimized for Battery and Load Management Applications in
Portable Equipment
Li−Ion Battery Charging and Protection Circuits
DC−DC Buck Circuit
VR Max
VF Max
IF Max
20 V
0.47 V
2.0 A
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−3.2
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−2.3
t≤5s
TA = 25°C
−4.0
Steady
State
t≤5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
PD
TA = 25°C
TA = 25°C
Steady
State
ID
1.5
W
−2.2
A
W
IDM
−16
A
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−1.0
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
tp = 10 ms
Operating Junction and Storage Temperature
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Peak Repetitive Reverse Voltage
Symbol
Value
Unit
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
2.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm2, 2 oz Cu).
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 0
1
SCHOTTKY DIODE
MARKING
DIAGRAM
K
WDFN6
CASE 506AN
−1.6
0.71
Pulsed Drain Current
K
P−CHANNEL MOSFET
D
PD
TA = 25°C
G
D
2.3
TA = 85°C
A
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
−4.0 A
200 mW @ −1.8 V
Applications
•
•
ID Max
100 mW @ −4.5 V
1
2 JJMG
G
3
Pin 1
6
5
4
JJ = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A
1
N/C
2
K
6
K
5
G
4
S
D
D
3
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTLJD3180PZ/D
NTLJD3182FZ
THERMAL RESISTANCE RATINGS
Symbol
Max
Junction−to−Ambient – Steady State (Note 3)
Parameter
RqJA
83
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
177
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
54
Unit
°C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
−20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, Ref to 25°C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VDS = −16 V, VGS = 0 V
V
13
mV/°C
TJ = 25°C
−1.0
TJ = 85°C
−10
IGSS
VDS = 0 V, VGS = ±8.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
±10
mA
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
−0.4
−1.0
2.0
V
mV/°C
VGS = −4.5 V, ID = −2.0 A
68
100
VGS = −2.5 V, ID = −2.0 A
90
144
VGS = −1.8 V, ID = −1.7 A
125
200
VDS = −16 V, ID = −2.0 A
6.5
S
450
pF
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
90
62
Total Gate Charge
QG(TOT)
5.2
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.5
td(ON)
6.6
VGS = −4.5 V, VDS = −10 V,
ID = −2.0 A
7.8
nC
0.3
0.84
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −4.5 V, VDD = −5.0 V,
ID = −2.0 A, RG = 2.0 W
tf
ns
9.0
14
12.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
Reverse Recovery Time
VSD
TJ = 25°C
−0.73
TJ = 125°C
−0.62
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V, IS = −1.0 A
−1.0
V
23
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
QRR
13
10
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
10
nC
NTLJD3182FZ
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 100 mA
0.34
0.39
V
IF = 1.0 A
0.47
0.53
Maximum Instantaneous
Reverse Current
IR
Capacitance
C
Min
VR = 30 V
17
20
VR = 20 V
3.0
8.0
VR = 10 V
2.0
4.5
VR = 5.0 V, f = 1.0 MHz
38
mA
pF
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 100 mA
Min
0.22
0.35
V
IF = 1.0 A
0.40
0.50
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
0.22
2.5
VR = 20 V
0.11
1.6
VR = 10 V
0.06
1.2
Typ
Max
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Symbol
Test Conditions
Maximum Instantaneous
Forward Voltage
VF
IF = 100 mA
0.20
0.29
IF = 1.0 A
0.40
0.47
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
2.0
20
VR = 20 V
1.1
10.9
VR = 10 V
0.63
8.4
Parameter
Min
mA
ORDERING INFORMATION
Device Order Number
Package Type
Tape & Reel Size†
NTLJD3182FZTAG
WDFN6
(Pb−Free)
3000 / Tape & Reel
NTLJD3182FZTBG
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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3
NTLJD3182FZ
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
−ID, DRAIN CURRENT (AMPS)
−2.0 V
6
−1.8 V
−1.6 V
4
−1.4 V
2
−1.2 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
8
TJ = 25°C
−2.2 V
VGS = −2.5 V to −5 V
−1.0 V
0
1
2
3
4
5
VDS ≥ 5 V
6
4
TJ = 25°C
2
TJ = 125°C
0
0
0.5
TJ = 125°C
0.08
0.06
TJ = 25°C
0.04
TJ = −55°C
0.02
2.0
2.5
4.0
6.0
8.0
TJ = 25°C
0.28
0.24
VGS = −1.8 V
0.20
0.16
VGS = −2.5 V
0.12
0.08
VGS = −4.5 V
0.04
0
1.5
100000
−IDSS, LEAKAGE (nA)
1.25
1.0
0.75
25
50
75
100
4.5
5.5
6.5
7.5
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
VGS = 0 V
ID = −2 A
VGS = −4.5 V
0
3.5
2.5
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
−25
3
0.32
−ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
Figure 2. Transfer Characteristics
0.1
0.5
−50
1.5
Figure 1. On−Region Characteristics
VGS = −4.5 V
1.5
1
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.12
1.75
TJ = −55°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
8
125
150
10000
TJ = 150°C
1000
100
TJ = 125°C
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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4
20
NTLJD3182FZ
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
VGS = 0 V
-V GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
600
Ciss
400
200
Coss
0
0
Crss
5
10
15
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 7. Capacitance Variation
4
3
VGS
QGS
2
QGD
1
0
ID = −3.8 A
TJ = 25°C
0
1
3
5
2
4
QG, TOTAL GATE CHARGE (nC)
6
2
100
−IS, SOURCE CURRENT (AMPS)
VDD = −5.0 V
ID = −2.0 A
VGS = −4.5 V
td(off)
tf
tr
10
td(on)
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
1.5
1
0.5
0
0
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0.6
0.2
0.4
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
10
100 ms
1 ms
10 ms
1
0.1
0.01
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1.0
Figure 10. Diode Forward Voltage versus Current
100
−ID, DRAIN CURRENT (AMPS)
t, TIME (ns)
QT
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
1
5
dc
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
100
NTLJD3182FZ
EFFECTIVE TRANSIENT THERMAL RESISTANCE
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1000
100
D = 0.5
0.2
0.1
10
*See Note 2 on Page 1
P(pk)
0.05
0.02
1 0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
Figure 12. Thermal Response
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6
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
10
100
1000
NTLJD3182FZ
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF , INSTANTANEOUS FORWARD CURRENT (AMPS)
10
TJ = 85°C
1.0
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ = 85°C
TJ = 125°C
0.1
0.1
0.2
0.3
TJ = 25°C
0.4
0.5
0.6
0.7
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 13. Typical Forward Voltage
Figure 14. Maximum Forward Voltage
100E-3
100E-3
10E-3
TJ = 125°C
1.0E-3
TJ = 85°C
100E-6
10E-6
TJ = 25°C
0
10
TJ = 125°C
10E-3
1.0E-3
TJ = 85°C
100E-6
1.0E-6
100E-9
0.9
1.0E+0
I R , MAXIMUM REVERSE CURRENT (AMPS)
1.0E+0
I R , REVERSE CURRENT (AMPS)
10
20
30
TJ = 25°C
10E-6
1.0E-6
100E-9
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Typical Reverse Current
Figure 16. Maximum Reverse Current
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7
30
NTLJD3182FZ
PACKAGE DIMENSIONS
WDFN6, 2x2
CASE 506AN−01
ISSUE D
D
PIN ONE
REFERENCE
EXPOSED Cu
PLATING
ÍÍÍ
ÍÍÍ
ÍÍÍ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÇÇÇ ÉÉ
ÉÉÉ
ÇÇ
ÉÉ
A
B
MOLD CMPD
DETAIL B
OPTIONAL
CONSTRUCTIONS
E
DIM
A
A1
A3
b
D
D2
E
E2
e
F
K
L
L1
0.10 C
0.10 C
TOP VIEW
L1
DETAIL A
A3
DETAIL B
0.10 C
L
L
OPTIONAL
CONSTRUCTIONS
A
0.08 C
NOTE 4
A1
C
SIDE VIEW
0.10 C A
L
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
SEATING
PLANE
1.74
B
1
3
1.10
6X
DETAIL A
E2
6
K
4
2X
0.77
D2
F
D2
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
2.00 BSC
0.57
0.67
2.00 BSC
0.90
1.10
0.65 BSC
0.15 BSC
0.25 REF
0.20
0.30
--0.10
6X
0.47
2.30
0.10 C A
B
PACKAGE
OUTLINE
b
0.10 C A
e
0.05 C
1
B
NOTE 3
6X
BOTTOM VIEW
0.35
0.65
PITCH
DIMENSIONS: MILLIMETERS
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
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NTLJD3182FZ/D