ONSEMI NVLJD4007NZTAG

NVLJD4007NZ
Small Signal MOSFET
30 V, 245 mA, Dual, N−Channel, Gate ESD
Protection, 2x2 WDFN Package
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Features
•
•
•
•
•
•
Optimized Layout for Excellent High Speed Signal Integrity
Low Gate Charge for Fast Switching
Small 2 x 2 mm Footprint
ESD Protected Gate
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"10
V
Continuous Drain
Current (Note 1)
Steady State = 25°C
ID
245
mA
Power Dissipation
(Note 1)
Steady State = 25°C
PD
755
mW
tP v 10 ms
IDM
1.2
A
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
ISD
245
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
D (4)
G (2)
Value
Operating Junction and Storage Temperature
Symbol
Max
Unit
RqJA
166
°C/W
G (5)
S (1)
N−Channel
S (3)
N−Channel
MARKING
DIAGRAM
WDFN6
CASE 506AN
1
1
2
3
JGG
G
6
5
4
JG = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
S1
1
G1
2
6
D1
5
G2
4
D2
D2
S2
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
245 mA
2.3 W @ 2.5 V
D (6)
Symbol
Pulsed Drain Current
ID MAX
(Note 1)
1.4 W @ 4.5 V
30 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(on)
Typ @ VGS
V(BR)DSS
3
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NVLJD4007NZTAG
WDFN6
(Pb−Free)
3000/Tape &
Reel
NVLJD4007NZTBG
WDFN6
(Pb−Free)
3000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 0
1
Publication Order Number:
NVLJD4007NZ/D
NVLJD4007NZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 100 mA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 30 V
1.0
mA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 20 V,
T = 85 °C
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
±25
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
±1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
T = 85 °C
±1.0
mA
VGS(TH)
VDS = VGS, ID = 100 mA
1.5
V
VGS(TH)/TJ
Reference to 25°C, ID = 100 mA
−2.5
RDS(on)
VGS = 4.5 V, ID = 125 mA
1.4
7.0
VGS = 2.5 V, ID = 125 mA
2.3
7.5
VDS = 3 V, ID = 125 mA
80
OFF CHARACTERISTICS
V
27
mV/°C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
gFS
0.5
1.0
mV/°C
W
mS
CAPACITANCES & GATE CHARGE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VDS = 5.0 V, f = 1 MHz,
VGS = 0 V
Qg
12.2
20
10
15
3.3
6.0
pF
0.75
Gate−to−Source Charge
Qgs
Gate−to−Drain Charge
Qgd
Plateau Voltage
VGP
1.57
V
td(ON)
9
ns
VDS = 24 V, ID = 100 mA,
VGS = 4.5 V
0.20
nC
0.20
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
VGS = 4.5 V, VDS = 24 V,
ID = 125 mA, RG = 10 W
td(OFF)
tf
41
96
ns
72
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 125 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
0.79
0.9
V
NVLJD4007NZ
TYPICAL PERFORMANCE CURVES
4.5 V
ID, DRAIN CURRENT (A)
4.0 V
1.0
0.9
3.5 V
0.8
0.7
3.0 V
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
0.6
0.5
0.4
0.3
0.2
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
5.0 V
VGS = 10 V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ = 150°C
0.7
0.6
TJ = −55°C
0.5
0.4
0.3
0.2
0
1.0
0.5
1.5
2.0
2.5
3.5
3.0
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 125 mA
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
3.0
2.5
2.0
4.0
3.5
VGS, GATE VOLTAGE (V)
4.5
10
8.0
VGS = 2.5 V
VGS = 4.5 V
TJ = 25°C
7.0
4.0 4.5
TJ = −55°C
TJ = 125°C
9.0
6.0
5.0
TJ = 125°C
4.0
3.0
TJ = 25°C
2.0
1.0
0
TJ = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1000
ID = 125 mA
VGS = 4.5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
0.9
0.8
VGS, GATE−TO−SOURCE VOLTAGE (V)
9.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
VDS = 5 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
1.5
1.2
1.1
1.0
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
1.2
1.1
−25
0
25
50
75
100
125
150
TJ = 150°C
100
TJ = 125°C
10
TJ = 85°C
1
0.1
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NVLJD4007NZ
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
25
VGS = 0 V
TJ = 25°C
f = 1 MHz
20
15
Ciss
10
Coss
5
Crss
0
0
5
10
15
20
25
30
5.0
4.5
25
4.0
3.5
VDS
3.0
15
2.5
2.0
QGS
1.5
0.5
0
0
0.1
10
VDS = 24 V
ID = 100 mA
TJ = 25°C
0.2
0.3
0.4
0.5
0.6
QG, TOTAL GATE CHARGE (nC)
0.7
5
0
0.8
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
IS, SOURCE CURRENT (A)
VGS = 4.5 V
VDD = 24 V
ID = 125 mA
td(off)
tf
tr
100
10
td(on)
1
10
TJ = 85°C
TJ = 125°C
1
TJ = 150°C
0.1
100
TJ = 25°C
TJ = −55°C
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
ID, DRAIN CURRENT (A)
t, TIME (ns)
QGD
1.0
Figure 7. Capacitance Variation
1
20
VGS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
30
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES
VGS ≤ 10 V
Single Pulse
TC = 25°C
1
10 ms
100 ms
1 ms
10 ms
0.1
dc
0.01
0.001
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NVLJD4007NZ
TYPICAL PERFORMANCE CURVES
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE
1000
RqJA Steady State = 166°C/W
100 Duty Cycle = 0.5
0.20
10
0.10
0.05
0.02
Single Pulse
1
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
t, TIME (s)
Figure 12. Thermal Impedance (Junction−to−Ambient)
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5
1E+01
1E+02
1E+03
NVLJD4007NZ
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE F
D
PIN ONE
REFERENCE
0.10 C
0.10 C
PLATING
ÍÍ
ÍÍ
ÍÍ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÇÇÇ
ÉÉÉ
EXPOSED Cu
MOLD CMPD
DETAIL B
OPTIONAL
CONSTRUCTIONS
E
L
TOP VIEW
DIM
A
A1
A3
b
D
D2
E
E2
e
F
K
L
L1
L
L1
DETAIL A
A3
DETAIL B
0.10 C
ÉÉ
ÇÇ
ÇÇ
A
B
OPTIONAL
CONSTRUCTIONS
A
0.08 C
NOTE 4
A1
C
SIDE VIEW
0.10 C A
STYLE 3:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. DRAIN 2
5. GATE 2
6. DRAIN 1
SEATING
PLANE
B
D2
F
D2
L
1
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
2.00 BSC
0.57
0.77
2.00 BSC
0.90
1.10
0.65 BSC
0.15 BSC
0.25 REF
0.20
0.30
--0.10
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
3
1.74
DETAIL A
2X
0.77
E2
0.10 C A
B
1.10
6
K
4
6X
6X
b
0.10 C A
e
0.05 C
0.47
2.30
B
NOTE 3
PACKAGE
OUTLINE
BOTTOM VIEW
1
6X
0.35
0.65
PITCH
DIMENSIONS: MILLIMETERS
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NVLJD4007NZ/D