NVLJD4007NZ Small Signal MOSFET 30 V, 245 mA, Dual, N−Channel, Gate ESD Protection, 2x2 WDFN Package http://onsemi.com Features • • • • • • Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small 2 x 2 mm Footprint ESD Protected Gate AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "10 V Continuous Drain Current (Note 1) Steady State = 25°C ID 245 mA Power Dissipation (Note 1) Steady State = 25°C PD 755 mW tP v 10 ms IDM 1.2 A TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) ISD 245 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) D (4) G (2) Value Operating Junction and Storage Temperature Symbol Max Unit RqJA 166 °C/W G (5) S (1) N−Channel S (3) N−Channel MARKING DIAGRAM WDFN6 CASE 506AN 1 1 2 3 JGG G 6 5 4 JG = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS D1 S1 1 G1 2 6 D1 5 G2 4 D2 D2 S2 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 245 mA 2.3 W @ 2.5 V D (6) Symbol Pulsed Drain Current ID MAX (Note 1) 1.4 W @ 4.5 V 30 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(on) Typ @ VGS V(BR)DSS 3 (Top View) ORDERING INFORMATION Device Package Shipping† NVLJD4007NZTAG WDFN6 (Pb−Free) 3000/Tape & Reel NVLJD4007NZTBG WDFN6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 0 1 Publication Order Number: NVLJD4007NZ/D NVLJD4007NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 100 mA Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V, T = 85 °C 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±25 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V T = 85 °C ±1.0 mA VGS(TH) VDS = VGS, ID = 100 mA 1.5 V VGS(TH)/TJ Reference to 25°C, ID = 100 mA −2.5 RDS(on) VGS = 4.5 V, ID = 125 mA 1.4 7.0 VGS = 2.5 V, ID = 125 mA 2.3 7.5 VDS = 3 V, ID = 125 mA 80 OFF CHARACTERISTICS V 27 mV/°C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance gFS 0.5 1.0 mV/°C W mS CAPACITANCES & GATE CHARGE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VDS = 5.0 V, f = 1 MHz, VGS = 0 V Qg 12.2 20 10 15 3.3 6.0 pF 0.75 Gate−to−Source Charge Qgs Gate−to−Drain Charge Qgd Plateau Voltage VGP 1.57 V td(ON) 9 ns VDS = 24 V, ID = 100 mA, VGS = 4.5 V 0.20 nC 0.20 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr VGS = 4.5 V, VDS = 24 V, ID = 125 mA, RG = 10 W td(OFF) tf 41 96 ns 72 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 125 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.79 0.9 V NVLJD4007NZ TYPICAL PERFORMANCE CURVES 4.5 V ID, DRAIN CURRENT (A) 4.0 V 1.0 0.9 3.5 V 0.8 0.7 3.0 V 2.8 V 2.6 V 2.4 V 2.2 V 2.0 V 1.8 V 0.6 0.5 0.4 0.3 0.2 0.1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 5.0 V VGS = 10 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 150°C 0.7 0.6 TJ = −55°C 0.5 0.4 0.3 0.2 0 1.0 0.5 1.5 2.0 2.5 3.5 3.0 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 125 mA 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 3.0 2.5 2.0 4.0 3.5 VGS, GATE VOLTAGE (V) 4.5 10 8.0 VGS = 2.5 V VGS = 4.5 V TJ = 25°C 7.0 4.0 4.5 TJ = −55°C TJ = 125°C 9.0 6.0 5.0 TJ = 125°C 4.0 3.0 TJ = 25°C 2.0 1.0 0 TJ = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 1000 ID = 125 mA VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 0.9 0.8 VGS, GATE−TO−SOURCE VOLTAGE (V) 9.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 VDS = 5 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 1.5 1.2 1.1 1.0 0.1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.2 1.1 −25 0 25 50 75 100 125 150 TJ = 150°C 100 TJ = 125°C 10 TJ = 85°C 1 0.1 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NVLJD4007NZ VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 25 VGS = 0 V TJ = 25°C f = 1 MHz 20 15 Ciss 10 Coss 5 Crss 0 0 5 10 15 20 25 30 5.0 4.5 25 4.0 3.5 VDS 3.0 15 2.5 2.0 QGS 1.5 0.5 0 0 0.1 10 VDS = 24 V ID = 100 mA TJ = 25°C 0.2 0.3 0.4 0.5 0.6 QG, TOTAL GATE CHARGE (nC) 0.7 5 0 0.8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 IS, SOURCE CURRENT (A) VGS = 4.5 V VDD = 24 V ID = 125 mA td(off) tf tr 100 10 td(on) 1 10 TJ = 85°C TJ = 125°C 1 TJ = 150°C 0.1 100 TJ = 25°C TJ = −55°C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ID, DRAIN CURRENT (A) t, TIME (ns) QGD 1.0 Figure 7. Capacitance Variation 1 20 VGS VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 30 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES VGS ≤ 10 V Single Pulse TC = 25°C 1 10 ms 100 ms 1 ms 10 ms 0.1 dc 0.01 0.001 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NVLJD4007NZ TYPICAL PERFORMANCE CURVES R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1000 RqJA Steady State = 166°C/W 100 Duty Cycle = 0.5 0.20 10 0.10 0.05 0.02 Single Pulse 1 0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 t, TIME (s) Figure 12. Thermal Impedance (Junction−to−Ambient) http://onsemi.com 5 1E+01 1E+02 1E+03 NVLJD4007NZ PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE F D PIN ONE REFERENCE 0.10 C 0.10 C PLATING ÍÍ ÍÍ ÍÍ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. ÇÇÇ ÉÉÉ EXPOSED Cu MOLD CMPD DETAIL B OPTIONAL CONSTRUCTIONS E L TOP VIEW DIM A A1 A3 b D D2 E E2 e F K L L1 L L1 DETAIL A A3 DETAIL B 0.10 C ÉÉ ÇÇ ÇÇ A B OPTIONAL CONSTRUCTIONS A 0.08 C NOTE 4 A1 C SIDE VIEW 0.10 C A STYLE 3: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. DRAIN 2 5. GATE 2 6. DRAIN 1 SEATING PLANE B D2 F D2 L 1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.15 BSC 0.25 REF 0.20 0.30 --0.10 SOLDERMASK DEFINED MOUNTING FOOTPRINT 3 1.74 DETAIL A 2X 0.77 E2 0.10 C A B 1.10 6 K 4 6X 6X b 0.10 C A e 0.05 C 0.47 2.30 B NOTE 3 PACKAGE OUTLINE BOTTOM VIEW 1 6X 0.35 0.65 PITCH DIMENSIONS: MILLIMETERS ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVLJD4007NZ/D