MBR8H100MFS D

MBR8H100MFS,
NRVB8H100MFS
Switch Mode
Power Rectifiers
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
WF Suffix for Products with Wettable Flanks
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
100 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
8.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 162°C)
IFRM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
75
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
75
mJ
3B
ESD Rating (Machine Model)
M4
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B8H100
A
Y
W
ZZ
A
C
B8H100
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA
August, 2015 − Rev. 2
1
V
ESD Rating (Human Body Model)
© Semiconductor Components Industries, LLC, 2015
A
1
Device
Package
Shipping†
MBR8H100MFST1G
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
MBR8H100MFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVB8H100MFST1G
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVB8H100MFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVB8H100MFSWFT1G
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVB8H100MFSWFT3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBR8H100MFS/D
MBR8H100MFS, NRVB8H100MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
2.2
°C/W
0.68
0.81
0.76
0.90
180
0.06
300
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 8 Amps, TJ = 125°C)
(iF = 8 Amps, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
V
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100
TA = 175°C
1
150°C
125°C
25°C
0.1
0
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
10
0.2
−40°C
0.4
0.6
10
TA = 175°C
150°C
1
125°C
25°C
0.1
1.2
1.0
0.8
0
0.2
0.4
−40°C
0.8
0.6
1.0
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1.E+00
1.E−01
1.E−02
1.E−01
1.E−02
TA = 175°C
1.E−03
TA = 150°C
TA = 125°C
1.E−04
1.E−05
1.E−06
1.E−07
TA = 175°C
1.E−03
TA = 150°C
TA = 125°C
1.E−04
1.E−05
1.E−06
TA = 25°C
1.E−08
1.E−09
1.E−10
1.E−11
1.E−12
1.E−07
TA = 25°C
1.E−08
1.E−09
TA = −40°C
0
10
20
30
TA = −40°C
1.E−10
1.E−11
40
50
60
70
80
90 100
0
10
20
30
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
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2
MBR8H100MFS, NRVB8H100MFS
TYPICAL CHARACTERISTICS
20
TJ = 25°C
18
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
1,000
100
16
14
dc
12
10
Square Wave
8
6
4
RqJC = 2.2°C/W
2
0
10
0
10
20
30
40
60
50
70
80
90
60
100
80
100
120
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
160
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
8
IPK/IAV = 20
TJ = 175°C
7
IPK/IAV = 10
6
IPK/IAV = 5
5
4
3
Square Wave
2
dc
1
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t) (°C/W)
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Response
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3
1
10
100
1,000
MBR8H100MFS, NRVB8H100MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
0.10 C
DETAIL A
2X
0.495
0.10
0.05
c
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
b
C A B
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
4.560
2X
8X
1.530
e/2
e
L
1
4
3.200
4.530
K
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
1
0.965
G
D2
4X
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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For additional information, please contact your local
Sales Representative
MBR8H100MFS/D