MBR830MFS D

MBR830MFS, NRVB830MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
30 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
Mechanical Characteristics:
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
30
Average Rectified Forward Current
(Rated VR, TC = 143°C)
IF(AV)
8.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 143°C)
IFRM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
150
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−40 to +150
°C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
100
mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
A
A
1
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B830
A
Y
W
ZZ
A
C
B830
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
MBR830MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR830MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB830MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB830MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
1
Publication Order Number:
MBR830MFS/D
MBR830MFS, NRVB830MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
2.0
°C/W
0.44
0.50
0.57
0.70
15
0.020
50
0.200
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 8 Amps, TJ = 125°C)
(iF = 8 Amps, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
V
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
10
150°C
1
125°C
−40°C
25°C
0.1
0.0
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
150°C
125°C
1.0
25°C
−40°C
0.1
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1.E+00
1.E−01
1.E−01
TA = 150°C
1.E−02
TA = 125°C
1.E−03
TA = 150°C
1.E−02
TA = 125°C
1.E−03
1.E−04
1.E−04
TA = 25°C
1.E−05
TA = 25°C
1.E−05
1.E−06
1.E−06
1.E−07
TA = −40°C
1.E−08
1.E−07
TA = −40°C
1.E−08
1.E−09
1.E−10
1.E−09
0
5
10
15
20
25
30
0
5
10
15
20
25
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
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2
30
MBR830MFS, NRVB830MFS
TYPICAL CHARACTERISTICS
TJ = 25°C
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
10000
1000
100
10
0
5
10
15
20
25
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
RqJC = 2.0°C/W
dc
Square Wave
60
30
80
100
120
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
160
8
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
IPK/IAV = 20
TJ = 150°C
7
IPK/IAV = 10
6
IPK/IAV = 5
5
4
3
2
Square Wave
1
dc
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t) (°C/W)
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Response
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3
1
10
100
1000
MBR830MFS, NRVB830MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SIDE VIEW
8X
DETAIL A
SOLDERING FOOTPRINT*
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
E2
PIN 5
(EXPOSED PAD)
L1
2X
0.905
2X
M
0.495
4.530
3.200
G
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MBR830MFS/D