Si7802DN Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) ID (A) 0.435 at VGS = 10 V 1.95 0.445 at VGS = 6 V 1.9 • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET® Power MOSFET • Avalanche Tested • 100 % Rg Tested APPLICATIONS PowerPAK® 1212-8 • Primary Side Switch • Small DC/DC Circuits • Single-Ended Primary Switching Circuits S 3.30 mm 3.30 mm 1 S 2 D S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7802DN-T1-E3 (Lead (Pb)-free) Si7802DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C ID a 1.24 1.56 0.99 8 Continuous Source Current (Diode Conduction) IS Single Avalanche Current IAS 2.5 EAS 0.3 Single Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 70 °C PD A 3.2 1.3 mJ 3.8 1.5 2.0 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V 1.95 IDM Pulsed Drain Current Unit - 55 to 150 Soldering Recommendations (Peak Temperature)b, c W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73133 S-83050-Rev. D, 29-Dec-08 www.vishay.com 1 Si7802DN Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 2.4 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 1 VDS = 250 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage VDS ≥ 5 V, VGS = 10 V a µA 8 A VGS = 10 V, ID = 1.95 A 0.360 0.435 VGS = 6 V, ID = 1.9 A 0.370 0.445 gfs VDS = 15 V, ID = 1.95 A 8 VSD IS = 3.2 A, VGS = 0 V 0.8 1.2 14 21 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 125 V, VGS = 10 V, ID = 1.95 A f = 1MHz td(on) Turn-On Delay Time VDD = 125 V, RL = 1.25 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.8 4.4 IF = 3.2 A, dI/dt = 100 A/µs 1.6 2.4 10 15 10 15 21 35 12 20 65 100 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 7 7 6 6 ID - Drain Current (A) ID - Drain Current (A) VGS = 10 thru 5 V 5 4 3 5 4 3 TC = 125 °C 2 2 4V 1 1 0 0 25 °C - 55 °C 0 www.vishay.com 2 1 2 3 4 5 0 1 2 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4 5 Document Number: 73133 S-83050-Rev. D, 29-Dec-08 Si7802DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 800 0.50 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 700 0.46 0.42 VGS = 6 V 0.38 VGS = 10 V 600 500 400 300 200 Coss 0.34 Crss 100 0 0.30 0 1 2 3 4 5 6 7 0 8 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 70 80 125 150 2.5 VDS = 125 V ID = 1.95 A 8 VGS = 10 V ID = 1.95 A 2.0 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 6 4 2 1.5 1.0 0.5 0 0 3 6 9 12 0.0 - 50 15 - 25 0 25 50 75 100 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1.0 20 RDS(on) - On-Resistance (Ω) TJ = 150 °C IS - Source Current (A) 10 TJ = 25 °C 1 0.0 0.8 ID = 1.95 A 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73133 S-83050-Rev. D, 29-Dec-08 10 www.vishay.com 3 Si7802DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 50 0.6 40 ID = 250 µA 0.2 0.0 Power (W) V GS(th) Variance (V) 0.4 - 0.2 - 0.4 30 20 - 0.6 - 0.8 10 - 1.0 - 1.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient IDM Limited 10 Limited by RDS(on)* P(t) = 0.0001 ID - Drain Current (A) 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 0.01 P(t) = 1 P(t) = 10 TA = 25 °C Single Pulse DC BVDSS Limited 0.001 0.1 100 1 10 1000 VDS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73133 S-83050-Rev. D, 29-Dec-08 Si7802DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73133. Document Number: 73133 S-83050-Rev. 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