Si7368DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 20 0.0085 at VGS = 4.5 V 16 • • • • Halogen-free available TrenchFET® Power MOSFET Low RDS x Qg Figure of Merit Optimized For High Frequency Conversion RoHS COMPLIANT APPLICATIONS • Low-Side MOSFET in Synchronous Buck • DC/DC Converters in Desktops • Low Output Voltage Synchronous Rectifier PowerPAK® SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7368DP-T1-E3 (Lead (Pb)-free) Si7368DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C)a IDM IS Pulsed Drain Current (10 µs Pulse Width) a Continuous Source Current (Diode Conduction) TA = 25 °C TA = 70 °C Maximum Power Dissipationa PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ID b,c 10 s 20 17 4.1 5 3.2 Steady State 20 ± 16 13 10 50 1.4 1.7 1.1 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 s Steady State Steady State RthJA Typical 20 53 3.4 Maximum 25 70 4.5 Unit °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72154 S-80438-Rev. D, 03-Mar-08 www.vishay.com 1 Si7368DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.7 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±16 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55°C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 10 V RDS(on) µA 30 A VGS = 10 V, ID = 20 A 0.0043 0.0055 VGS = 4.5 V, ID = 16 A 0.0065 0.0085 gfs VDS = 6 V, ID = 20 A 48 VSD IS = 4.5 A, VGS = 0 V 0.7 1.1 17 25 Ω S V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 20 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 1.5 td(on) Turn-On Delay Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 22 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Rise Time nC 4.5 IF = 4.1 A, di/dt = 100 A/µs 35 20 30 65 100 17 30 40 80 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 thru 3 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 40 30 20 TC = 125 °C 25 °C 10 10 2V - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72154 S-80438-Rev. D, 03-Mar-08 Si7368DP Vishay Siliconix 0.010 3000 0.008 2400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °, unless otherwise noted VGS = 4.5 V 0.006 VGS = 10 V 0.004 Ciss 1800 1200 Coss Crss 600 0.002 0 0.000 0 10 20 30 40 0 50 4 8 20 Capacitance 1.6 6 VDS = 10 V ID = 20 A VGS = 10 V ID = 20 A 4 3 2 1.4 (Normalized) 5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current 1.2 1.0 1 0 0 5 10 15 20 0.8 - 50 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.030 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.00 - 25 Qg - Total Gate Charge (nC) 60 I S - Source Current (A) 12 0.024 0.018 ID = 20 A 0.012 0.006 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72154 S-80438-Rev. D, 03-Mar-08 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7368DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 200 0.2 160 0.0 Power (W) VGS(th) Variance (V) ID = 250 µA -0.2 120 80 -0.4 40 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 Limited by R DS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 TC = 25 °C Single Pulse 0.01 0.1 DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 53 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72154 S-80438-Rev. D, 03-Mar-08 Si7368DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72154. Document Number: 72154 S-80438-Rev. 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