VS-GT300YH120N www.vishay.com Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES • Trench IGBT technology temperature coefficient with positive • Low switching losses • Maximum junction temperature 150 °C • 10 μs short circuit capability • Low inductance case Double INT-A-PAK • HEXFRED® antiparallel and series diodes with soft reverse recovery PRODUCT SUMMARY • Isolated copper baseplate using DCB (Direct Copper Bonding) technology IGBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 2.17 V ID(DC) at TC = 48 °C 300 A HEXFRED® SERIES • Direct mounting to heatsink • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DIODE VR 1200 V VF (typical) at 300 A, 25 °C 1.99 V IF(DC) at 49 °C 300 A BENEFITS • Short circuit ruggedness IGBT AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A HEXFRED® 4.12 V ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C 1.6 V IF(DC) at 63 °C 40 A Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Current fed inverter topology ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 1200 V IGBT Collector to emitter voltage VCES Collector current IC Clamped inductive load current ILM Gate to emitter voltage VGE Maximum power dissipation PD TC = 80 °C TC = 25 °C 234 341 A 700 ± 30 TC = 80 °C 583 TC = 25 °C 1042 V W SERIES DIODE Cathode to anode breakdown voltage Continuous forward current Peak repetitive forward current Maximum power dissipation 1200 VRRM IF IFSM PD TC = 80 °C 232 TC = 25 °C 348 TC = 25 °C 2200 TC = 80 °C 438 TC = 25 °C 781 A A W Revision: 12-Jun-15 Document Number: 94681 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) ANTPARALLEL DIODE Continuous forward current IF (1) Peak repetitive forward current IFSM Maximum power dissipation PD TC = 80 °C 36 TC = 25 °C 51 A n/a TC = 80 °C 77 TC = 25 °C 137 A W MODULE RMS isolation voltage VISOL f = 50 Hz, t = 1 minute 4000 V Junction temperature range TJ -40 to +150 Storage temperature range TSTG -40 to +150 °C Note (1) Max. RMS current admitted for the terminals 10 A ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 0.5 mA, TJ = 25 °C 1200 - - VGE = 15 V, IC = 300 A, TJ = 25 °C - 2.17 - VGE = 15 V, IC = 300 A, TJ = 125 °C - 2.4 - 4.7 5.6 7.8 VGE = 0 V, VCE = 1200 V - 0.003 0.3 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 1.03 - VGE = ± 30 V - - 400 UNITS IGBT Collector to emitter breakdown voltage V(BR)CES Collector to emitter saturation voltage VCE(on) Gate to emitter threshold voltage Collector to emitter leakage current Gate to emitter leakage current VGE(th) ICES IGES VCE = VGE, IC = 14 mA, TJ = 25 °C V mA nA SERIES DIODE Cathode to anode breakdown voltage Cathode to anode leakage current Forward voltage VR IR VF IC = 1.0 mA, TJ = 125 °C 1200 - - VR = 1200 V - 0.003 0.2 VR = 1200 V, TJ = 125 °C - 3.5 - IF = 300 A - 1.99 - IF = 300 A, TJ = 125 °C - 2.02 - IF = 10 A - 1.6 - IF = 10 A, TJ = 125 °C - 1.4 - IC = 300 A - 4.12 4.65 mA V ANTIPARALLEL DIODE Forward voltage VF V IGBT AND HEXFRED® SERIES DIODE Collector to emitter saturation voltage + Forward voltage VCE(on) + VF V Revision: 12-Jun-15 Document Number: 94681 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VCC = 600 V, IC = 300 A, Rg = 4.7 , VGE = ± 15 V - 35.2 - - 26.3 - UNITS IGBT Turn-on switching loss Eon Turn-off switching loss Eoff Turn-on delay time td(on) - 776 - tr - 263 - - 816 - - 131 - Rise time Turn-off delay time td(off) Fall time tf VCC = 600 V, IC = 300 A, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C Turn-on switching loss Eon - 36.1 - Turn-off switching loss Eoff - 32.1 - Input capacitance Cies - 36 - Output capacitance Coes - 1.4 - Reverse transfer capacitance Cres - 1.0 - VCE = 30 V, f = 1.0 MHz Reverse bias save operating area RBSOA TJ = 150 °C, Rg = 22 , VGE = 15 V to 0 V, VCC = 600 V, VP = 1200 V, IC = 700 A - - - Short circuit save operating area SCSOA TJ = 150 °C, Rg = 22 , VGE = 15 V to 0 V, VCC = 600 V, VP = 1200 V - - 10 mJ ns mJ nF μs SERIES DIODE Diode reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr IF = 50 A, VR = 400 V, dI/dt = -500 A/μs TJ = 25 °C - 3.0 - TJ = 125 °C - 8.0 - TJ = 25 °C - 230 - TJ = 125 °C - 370 - TJ = 25 °C - 26 - TJ = 125 °C - 43 - μC nS A ANTIPARALLEL DIODE Diode reverse recovery charge Qrr Reverse recovery time trr IF = 10 A, VR = 400 V, dI/dt = 500 A/μs TJ = 25 °C - 2.1 - TJ = 125 °C - 3.4 - TJ = 25 °C - 175 - TJ = 125 °C - 241 - MIN. TYP. MAX. - - 0.12 - - 0.16 - - 0.91 - 0.035 - μC ns THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS IGBT Junction to case per ½ module Series Diode RthJC Antiparallel Diode Case to sink Mounting torque Weight RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 300 UNITS °C/W Nm g Revision: 12-Jun-15 Document Number: 94681 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N Vishay Semiconductors 160 600 140 VGE = 18 V VGE = 15 V 500 VGE = 12 V 120 400 100 IC (A) Max. Allowable Case Temperature (°C) www.vishay.com 80 60 VGE = 9 V 300 200 40 100 20 0 0 0 50 100 150 200 250 300 0 350 400 1 2 IC - Continuous Collector Current IGBT (A) Fig. 1 - Maximum IGBT Continuous Collector Current vs. Case Temperature 600 TJ = 125 °C 200 VGE = 12 V VGE = 9 V TJ = 25 °C 150 IC (A) IC (A) 5 250 VGE = 15 V 400 4 Fig. 4 - Typical IGBT Output Characteristics, TJ = 150 °C VGE = 18 V 500 3 VCE (V) 300 100 200 50 100 0 0 0 1 2 3 4 5 4 5 6 VCE (V) Fig. 2 - Typical IGBT Output Characteristics, TJ = 25 °C 600 8 9 10 Fig. 5 - Typical IGBT Transfer Characteristics 100 VGE = 18 V TJ = 150 °C VGE = 15 V 500 7 VGE (V) 10 VGE = 12 V 1 VGE = 9 V ICES (mA) IC (A) 400 300 200 TJ = 125 °C 0.1 0.01 TJ = 25 °C 100 0.001 0 0 1 2 3 4 5 VCE (V) Fig. 3 - Typical IGBT Output Characteristics, TJ = 125 °C 0.0001 100 200 300 400 500 600 700 800 900 1000 11001200 VCES (V) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Revision: 12-Jun-15 Document Number: 94681 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N www.vishay.com Vishay Semiconductors Allowable Case Temperature (°C) 6 TJ = 25 °C VGEth (V) 5 4 TJ = 125 °C 3 160.00 140.00 120.00 100.00 80.00 60.00 40.00 20.00 0.00 2 0 2 4 6 8 10 12 0 14 30 40 50 60 Fig. 10 - Maximum Continuous Forward Current vs. Case Temperature Antiparallel Diode Fig. 7 - Typical IGBT Gate Threshold Voltage 100 160.00 90 140.00 80 120.00 70 100.00 TJ = 25 °C 60 IF (A) Allowable Case Temperature (°C) 20 IF - Continuous Forward Current (A) IC (mA) 80.00 50 40 60.00 TJ = 150 °C 30 40.00 20 20.00 TJ = 125 °C 10 0 0.00 0 50 100 150 200 250 300 350 0.5 400 1 1.5 3 3.5 4 100 600 550 TJ = 150 °C 10 500 TJ = 150 °C 1 350 300 TJ = 125 °C 250 IR (mA) 400 TJ = 125 °C 0.1 0.01 200 TJ = 25 °C 150 0.001 100 50 2.5 Fig. 11 - Typical Diode Forward Voltage Characteristics of Antiparallel Diode tp = 500 μs Fig. 8 - Maximum Continuous Forward Current vs. Case Temperature Series Diode 450 2 VF - Anode to Cathode Forward Voltage Drop (V) IF - Continuous Forward Current (A) IF - Instantaneous Forward Drop (A) 10 TJ = 25 °C 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 VFM - Forward Voltage Drop (V) Fig. 9 - Typical Series Diode Forward Voltage 0.0001 100 200 300 400 500 600 700 800 900 10001100 1200 VR (V) Fig. 12 - Typical Series Diode Leakage Current vs. Reverse Voltage Revision: 12-Jun-15 Document Number: 94681 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N www.vishay.com Vishay Semiconductors 40 10 000 Energy (mJ) 30 td(off) Eon Switching Time (ns) VCC = 600 V Rg = 4.7 Ω VGE = 15 V L = 500 μH Eoff 20 10 td(on) 1000 tr tf 100 10 0 0 50 100 150 200 250 300 350 0 10 20 Ic (A) Rg (Ω) Fig. 13 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C Freewheeling Diode VS-H3195D12A6B in TO-247 Package Fig. 16 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C, IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH 500 140 VCC = 600 V IC = 300 A VGE = 15 V L = 500 μH 450 10 A, TJ = 25 °C 400 100 Eon trr (ns) Energy (mJ) 120 80 60 10 A, TJ = 125 °C 40 A, TJ = 25 °C 350 40 A, TJ = 125 °C 300 250 Eoff 40 200 150 20 0 10 20 30 40 100 200 Rg (Ω) 300 400 500 diF/dt (A/μs) Fig. 14 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C Freewheeling Diode VS-H3195D12A6B in TO-247 Package Fig. 17 - Typical trr Antiparallel Diode vs. diF/dt, Vrr = 400 V 40 10 000 VCC = 600 V Rg = 4.7 Ω VGE = 15 V L = 500 μH 40 A, TJ = 125 °C 35 td(off) 1000 30 td(on) Irr (A) Switching Time (ns) 30 tr 100 10 A, TJ = 125 °C 25 20 tf 15 10 10 A, TJ = 25 °C 40 A, TJ = 25 °C 5 10 0 50 100 150 200 250 300 350 100 200 300 400 500 Ic (A) diF/dt (A/μs) Fig. 15 - Typical IGBT Switching Time vs. IC, TJ = 125 °C Freewheeling Diode VS-H3195D12A6B in TO-247 Package Fig. 18 - Typical Irr Antiparallel Diode vs. diF/dt, Vrr = 400 V Revision: 12-Jun-15 Document Number: 94681 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N www.vishay.com Vishay Semiconductors 6000 50 40 A, TJ = 125 °C 5000 Irr (A) 4000 Qrr (nC) TJ = 125 °C 40 10 A, TJ = 125 °C 3000 30 20 TJ = 25 °C 2000 1000 10 A, TJ = 25 °C 10 40 A, TJ = 25 °C 0 0 100 200 300 400 500 100 200 Fig. 19 - Typical Qrr Antiparallel Diode vs. diF/dt, Vrr = 400 V 500 Fig. 21 - Typical Irr Chopper Diode vs. diF/dt, Vrr = 400 V, IF = 50 A 600 10 000 550 9000 8000 TJ = 125 °C TJ = 125 °C 7000 450 Qrr (nC) trr (ns) 400 diF/dt (A/μs) diF/dt (A/μs) 500 300 400 350 6000 5000 4000 300 3000 TJ = 25 °C 250 TJ = 25 °C 2000 200 1000 100 200 300 400 500 100 200 300 400 500 diF/dt (A/μs) diF/dt (A/μs) Fig. 20 - Typical trr Series Diode vs. diF/dt, Vrr = 400 V, IF = 50 A Fig. 22 - Typical Qrr Chopper Diode vs. diF/dt, Vrr = 400 V, IF = 40 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0..20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 23 - Maximum Thermal Impedance ZthJC Characteristics IGBT Revision: 12-Jun-15 Document Number: 94681 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics Series Diode CIRCUIT CONFIGURATION 6 7 11 3 2 1 5 4 9 ORDERING INFORMATION TABLE Device code VS- G T 300 Y H 120 N 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - T = Trench IGBT technology 4 - Current rating (300 = 300 A) 5 - Y = Current Fed Inverter 6 - Package indicator (Double INT-A-PAK) 7 - Voltage rating (120 = 1200 V) 8 - N = Ultrafast Revision: 12-Jun-15 Document Number: 94681 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300YH120N www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters Mounting depth max.11 2.8 x 0.5 16 28 4 1 28 31 3 7 11 6 10 2 8 4 9 5 15 30 48 61.4 20.1 35.4 6. 27 Ø 26 7.2 ± 0.6 23 30.5 6 3-M6 6 22 6 93 106.4 Revision: 12-Jun-15 Document Number: 94681 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000