VISHAY V60100C_12

New Product
V60100C & VB60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS ®
TO-220AB
TO-263AB
• Low forward voltage drop, low power
losses
K
• High efficiency operation
• Low thermal resistance
2
2
1
V60100C
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
1
3
VB60100C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 2
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB)
K
HEATSINK
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
MECHANICAL DATA
IFSM
320 A
Case: TO-220AB and TO-263AB
VF at IF = 30 A
0.66 V
TJ max.
150 °C
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60100C
VB60100C
UNIT
VRRM
100
V
IF(AV)
60
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
320
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 140 mH per diode
EAS
450
mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
TJ, TSTG
- 40 to + 150
°C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Operating junction and storage temperature range
Document Number: 88942
Revision: 24-Jun-09
per device
per diode
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
New Product
V60100C & VB60100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
Instantaneous forward voltage per diode (1)
Reverse current at rated VR per
IF = 5 A
IF = 10 A
IF = 15 A
IF = 20 A
IF = 30 A
SYMBOL
TYP.
MAX.
VBR
100 (minimum)
-
0.45
0.52
0.58
0.63
0.73
0.63
0.79
0.58
0.70
TA = 25 °C
TA = 25 °C
VF
UNIT
V
IF = 5 A
IF = 10 A
IF = 15 A
IF = 20 A
IF = 30 A
TA = 125 °C
0.36
0.45
0.53
0.58
0.66
VR = 80 V
TA = 25 °C
TA = 125 °C
24
13
500
20
µA
mA
VR = 100 V
TA = 25 °C
TA = 125 °C
65
30
1000
-
µA
mA
SYMBOL
V60100C
VB60100C
UNIT
RθJC
2.5
2.5
°C/W
diode (2)
IR
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V60100C-E3/4W
1.89
4W
50/tube
Tube
TO-263AB
VB60100C-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VB60100C-E3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
70
30
D = 0.8
60
D = 0.5
25
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
50
40
30
20
D = 0.3
20
D = 1.0
D = 0.2
15
D = 0.1
T
10
5
10
0
D = tp/T
tp
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88942
Revision: 24-Jun-09
New Product
V60100C & VB60100C
Vishay General Semiconductor
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
1000
100
0
0.2
0.4
0.6
0.8
0.1
1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
1000
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88942
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
New Product
V60100C & VB60100C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88942
Revision: 24-Jun-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000