New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS ® TO-220AB TO-263AB • Low forward voltage drop, low power losses K • High efficiency operation • Low thermal resistance 2 2 1 V60100C • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 1 3 VB60100C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 2 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB) K HEATSINK • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V MECHANICAL DATA IFSM 320 A Case: TO-220AB and TO-263AB VF at IF = 30 A 0.66 V TJ max. 150 °C Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V60100C VB60100C UNIT VRRM 100 V IF(AV) 60 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 320 A Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode EAS 450 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs TJ, TSTG - 40 to + 150 °C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Operating junction and storage temperature range Document Number: 88942 Revision: 24-Jun-09 per device per diode For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product V60100C & VB60100C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA Instantaneous forward voltage per diode (1) Reverse current at rated VR per IF = 5 A IF = 10 A IF = 15 A IF = 20 A IF = 30 A SYMBOL TYP. MAX. VBR 100 (minimum) - 0.45 0.52 0.58 0.63 0.73 0.63 0.79 0.58 0.70 TA = 25 °C TA = 25 °C VF UNIT V IF = 5 A IF = 10 A IF = 15 A IF = 20 A IF = 30 A TA = 125 °C 0.36 0.45 0.53 0.58 0.66 VR = 80 V TA = 25 °C TA = 125 °C 24 13 500 20 µA mA VR = 100 V TA = 25 °C TA = 125 °C 65 30 1000 - µA mA SYMBOL V60100C VB60100C UNIT RθJC 2.5 2.5 °C/W diode (2) IR Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode ORDERING INFORMATION PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V60100C-E3/4W 1.89 4W 50/tube Tube TO-263AB VB60100C-E3/4W 1.38 4W 50/tube Tube TO-263AB VB60100C-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 70 30 D = 0.8 60 D = 0.5 25 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 50 40 30 20 D = 0.3 20 D = 1.0 D = 0.2 15 D = 0.1 T 10 5 10 0 D = tp/T tp 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88942 Revision: 24-Jun-09 New Product V60100C & VB60100C Vishay General Semiconductor 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 1000 100 0 0.2 0.4 0.6 0.8 0.1 1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 10 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 1000 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 1 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88942 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product V60100C & VB60100C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88942 Revision: 24-Jun-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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